© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 12 1Publication Order Number:
NCV8401/D
NCV8401A, NCV8401B
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8401A/B is a three terminal p rotected L ow-Side S mart D iscrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage p rotection.
This device offers protection and is suitable for harsh automotive
environments.
Features
•Short Circuit Protection
•Thermal Shutdown with Automatic Restart
•Over Voltage Protection
•Integrated Clamp for Inductive Switching
•ESD Protection
•dV/dt Robustness
•Analog Drive Capability (Logic Level Input)
•NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
Typical Applications
•Switch a Variety of Resistive, Inductive and Capacitive Loads
•Can Replace Electromechanical Relays and Discrete Circuits
•Automotive / Industrial
Device Package Shipping†
ORDERING INFORMATION
DPAK
CASE 369C
STYLE 2
Drain
Source
Temperature
Limit
Gate
Input
MARKING
DIAGRAM
Y = Year
WW = Work Week
xxxxx = 8401A or 8401B
G = Pb−Free Package
Current
Limit Current
Sense
Overvoltage
Protection
ESD Protection
www.onsemi.com
YWW
NCV
xxxxxG
*Max current may be limited below this value
depending on input conditions.
1 = Gate
2 = Drain
3 = Source
1
2
3
VDSS
(Clamped) RDS(ON) TYP ID MAX
(Limited)
42 V 23 mW @ 10 V 33 A*
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NCV8401ADTRKG DPAK
(Pb−Free) 2500/Tape & Ree
l
NCV8401BDTRKG DPAK
(Pb−Free) 2500/Tape & Ree
l
NCV8401A, NCV8401B
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage Internally Clamped VDSS 42 V
Drain−to−Gate Voltage Internally Clamped (RGS = 1.0 MW)VDGR 42 V
Gate−to−Source Voltage VGS "14 V
Drain Current − Continuous IDInternally Limited
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
PD1.1
2.0
W
Thermal Resistance, Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
1.6
110
60
°C/W
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 3.65 Apk, L = 120 mH, RG = 25 W, TJstart = 150°C) (Note 3) EAS 800 mJ
Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 3.0 W, td = 400 ms) VLD 65 V
Operating Junction Temperature TJ−40 to 150 °C
Storage Temperature Tstg −55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. Minimum FR4 PCB, steady state.
2. Mounted onto a 2″square FR4 board
(1″square, 2 oz. Cu 0.06″ thick single−sided, t = steady state).
3. Not subject to production testing.
DRAIN
SOURCE
GATE VDS
VGS
ID
IG
+
−
+
−
Figure 1. Voltage and Current Convention
NCV8401A, NCV8401B
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3
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = 150°C) (Note 4)
V(BR)DSS 42
42 46
44 50
50 Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) (Note 4)
IDSS 1.5
6.5 5.0 mAdc
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc) IGSSF 50 100 mAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.2 mAdc)
Threshold Temperature Coefficient
VGS(th) 1.0 1.8
5.0 2.0 Vdc
−mV/°C
Static Drain−to−Source On−Resistance (Note 5)
(VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 150°C) (Note 4)
RDS(on) 23
43 29
55
mW
Static Drain−to−Source On−Resistance (Note 5)
(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 150°C) (Note 4)
RDS(on) 28
50 34
60
mW
Source−Drain Forward On Voltage
(IS = 5 A, VGS = 0 V) VSD 0.80 1.1 V
SWITCHING CHARACTERISTICS (Note 4)
T urn−ON Time (10% VIN to 90% ID)VIN = 0 V to 5 V, VDD = 25 V
ID = 1.0 A, Ext RG = 2.5 W
tON 41 50 ms
T urn−OFF Time (90% VIN to 10% ID) tOFF 129 150
T urn−ON Time (10% VIN to 90% ID)VIN = 0 V to 10 V, VDD = 25 V,
ID = 1.0 A, Ext RG = 2.5 W
tON 16 25
T urn−OFF Time (90% VIN to 10% ID) tOFF 164 180
Slew−Rate ON (80% VDS to 50% VDS)Vin = 0 to 10 V, VDD = 12 V,
RL = 4.7 W
−dVDS/dtON 1.27 2.0 V/ms
Slew−Rate OFF (50% VDS to 80% VDS) dVDS/dtOFF 0.36 0.75
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Current Limit VGS = 5.0 V, VDS = 10 V
VGS = 5.0 V, TJ = 150°C (Note 4) ILIM 25
11 30
16 35
21 Adc
VGS = 10 V, VDS = 10 V
VGS = 10 V, TJ = 150°C (Note 4) 30
18 35
25 40
28
Temperature Limit (Turn−off) VGS = 5.0 V (Note 4) TLIM(off) 150 175 200 °C
Thermal Hysteresis VGS = 5.0 V DTLIM(on) 15 °C
Temperature Limit (Turn−off) VGS = 10 V (Note 4) TLIM(off) 150 165 185 °C
Thermal Hysteresis VGS = 10 V DTLIM(on) 15 °C
GATE INPUT CHARACTERISTICS (Note 4)
Device ON Gate Input Current VGS = 5 V ID = 1.0 A IGON 50 100 mA
VGS = 10 V ID = 1.0 A 400 700
Current Limit Gate Input Current VGS = 5 V, VDS = 10 V IGCL 0.1 0.5 mA
VGS = 10 V, VDS = 10 V 0.7 1.0
Thermal Limit Fault Gate Input Current VGS = 5 V, VDS = 10 V IGTL 0.6 1.0 mA
VGS = 10 V, VDS = 10 V 2.0 4.0
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD 4000
400
V
4. Not subject to production testing.
5. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.
NCV8401A, NCV8401B
www.onsemi.com
4
TYPICAL PERFORMANCE CUR VES
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
L (mH) L (mH)
10010
1
10
100
10010
100
1,000
10,000
VDS (V) VGS (V)
543210
0
5
10
20
25
30
40
45
4.03.53.02.52.01.51.0
0
5
10
15
20
25
30
IL(max) (A)
Emax (mJ)
ID (A)
ID (A)
TJstart = 25°C
TJstart = 150°C
TJstart = 25°C
TJstart = 150°C
15
35
VGS = 2.5 V
3 V
4 V
5 V
6 V 7 V 8 V 9 V
10 V −40°C
25°C
100°C
150°C
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
Time in Clamp (ms) Time in Clamp (ms)
101
1
10
100
1001
100
1,000
10,000
IL(max) (A)
Emax (mJ)
TJstart = 25°C
TJstart = 150°C
TJstart = 25°C
TJstart = 150°C
Figure 6. On−state Output Characteristics
at 255CFigure 7. Transfer Characteristics (VDS = 10 V)
NCV8401A, NCV8401B
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5
TYPICAL PERFORMANCE CUR VES
Figure 8. RDS(on) vs. Gate−Source Voltage Figure 9. RDS(on) vs. Drain Current
VGS (V) ID (A)
R
DS(on)
(m
W
)
RDS(on) (mW)
−40°C
25°C
100°C
150°C
−40°C, VGS = 5 V −40°C, VGS = 10 V
25°C, VGS = 5 V
25°C, VGS = 10 V
100°C, VGS = 5 V
100°C, VGS = 10 V
150°C, VGS = 5 V
Figure 10. Normalized RDS(on) vs. Temperature
(ID = 5 A) Figure 11. Current Limit vs. Gate−Source
Voltage (VDS = 10 V)
T (°C) VGS (V)
1201008040200−20−40
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Figure 12. Current Limit vs. Junction
Temperature (V
DS
= 10 V) Figure 13. Drain−to−Source Leakage Current
(V
GS
= 0 V)
TJ (°C) VDS (V)
4
0
353025201510
0.0001
0.001
0.01
0.1
1
10
100
NORMALIZED R
DS(on)
ILIM (A)
I
LIM
(A)
IDSS (mA)
60
−40°C
25°C
100°C
140
−40°C
25°C
100°C
150°C
VGS = 5 V
VGS = 10 V
10
20
30
40
50
60
70
80
345678910 10
15
20
25
30
35
40
45
13579
150°C, VGS = 10 V
15
20
25
30
35
40
45
56789
10
150°C
15
20
25
30
35
40
45
−40 −20 0 20 40 60 80 100 120 140
VGS = 5 V
VGS = 10 V
ID = 3 A
NCV8401A, NCV8401B
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6
TYPICAL PERFORMANCE CUR VES
Figure 14. Normalized Threshold Voltage vs.
Temperature (ID = 1.2 mA, VDS = VGS)Figure 15. Source−Drain Diode Forward
Characteristics (VGS = 0 V)
T (°C) IS (A)
1401006040200−20−40
0.6
0.7
0.8
0.9
1.0
1.1
1.2
87654321
0.4
0.5
0.6
0.7
0.8
0.9
1.0
NORMALIZED VGS(th) (V)
VSD (V)
80 120 910
−40°C
25°C
100°C
150°C
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
(VDD = 25 V, ID = 5 A, RG = 0 W)
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage (VDD = 25 V, ID = 5 A, RG = 0 W)
VGS (V) VGS (V)
109876543
0
50
100
150
200
109876543
0
0.5
1.0
1.5
2.0
Figure 18. Resistive Load Switching Time vs.
Gate Resistance (VDD = 25 V, ID = 5 A) Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
(VDD = 25 V, ID = 5 A)
RG (W)R
G (W)
2000150010005000
0
25
50
75
100
125
2000150010005000
0
0.2
0.4
0.6
0.8
1.4
1.6
2.0
TIME (ms)
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
TIME (ms)
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
td(off)
td(on)
tf
tr
−dVDS/dt(on)
dVDS/dt(off)
td(on), VGS = 5 V
td(off), VGS = 5 V
tr, VGS = 5 V
tf, VGS = 5 V
td(on), VGS = 10 V
td(off), VGS = 10 V
tr, VGS = 10 V
tf, VGS = 10 V 1.0
1.2
1.8
−dVDS/dt(on), VGS = 5 V
dVDS/dt(off), VGS = 5 V
−dVDS/dt(on), VGS = 10 V
dVDS/dt(off), VGS = 10 V
NCV8401A, NCV8401B
www.onsemi.com
7
TYPICAL PERFORMANCE CUR VES
0.001
0.01
0.1
1
10
100
1E−06 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH (sec)
RqJA 788 mm2 C°/W, 2 oz. Copper
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
COPPER HEAT SPREADER AREA (mm2)
RqJA (°C/W)
PCB Cu thickness, 1.0 oz
25
50
75
100
125
150
175
300 400 500 600 700 800
Figure 20. RqJA vs. Copper Area
0 100 200 PCB Cu thickness, 2.0 oz
Figure 21. Transient Thermal Resistance
200
225
250
Psi Tab−A
NCV8401A, NCV8401B
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10
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE F
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
b
D
E
b3
L3
L4b2
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.028 0.045 0.72 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
12 3
4
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
A1
H
DET AIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
eBOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTIONS
NOTE 7
Z
NCV8401/D
HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC).
P
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