POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Preliminary Data Sheet
Thyristor Modules
Thyristor/Diode Modules
Features
●International standard package
●Direct copper bonded Al2O3 -ceramic
base plate
●Planar passivated chips
●Isolation voltage 3600 V~
●UL registered, E 148688
●Keyed gate/cathode twin pins
Applications
●Motor control
●Power converter
●Heat and temperature control for
industrial furnaces and chemical
processes
●Lighting control
●Contactless switches
Advantages
●Space and weight savings
●Simple mounting with two screws
●Improved temperature and power
cycling capability
●Reduced protection circuits
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
PSKT 250
PSKH 250
VRSM VRRM Type
VDSM VDRM
V V Version 1 Version 1
900 800 PSKT 250/08io1 PSKH 250/08io1
1300 1200 PSKT 250/12io1 PSKH 250/12io1
1500 1400 PSKT 250/14io1 PSKH 250/14io1
1700 1600 PSKT 250/16io1 PSKH 250/16io1
1900 1800 PSKT 250/18io1 PSKH 250/18io1
PSKH
PSKT
ITRMS = 2x 450 A
ITAVM = 2x 287 A
VRRM = 800-1800 V
Symbol Test Conditions Maximum Ratings
ITRMS, IFRMS TVJ = TVJM 450 A
ITAVM, IFAVM TC = 85°C; 180° sine 287 A
ITSM, IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 9000 A
VR = 0 t = 8.3 ms (60 Hz), sine 9600 A
TVJ = TVJM t = 10 ms (50 Hz), sine 7800 A
VR = 0 t = 8.3 ms (60 Hz), sine 8500 A
∫∫
∫∫
∫i2dt TVJ = 45°C t = 10 ms (50 Hz), sine 405 000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 380 000 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 304 000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 300 000 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 860 A 100 A/µs
f =50 Hz, tP =200 µs
VD = 2/3 VDRM
IG = 1 A non repetitive, IT = 290 A 800 A/µs
diG/dt = 1 A/µs
(dv/dt)cr TVJ = TVJM;V
DR = 2/3 VDRM 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM tP = 30 µs 120 W
IT = ITAVM tP = 500 µs 60 W
PGAV 20 W
VRGM 10 V
TVJ -40...+140 °C
TVJM 140 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL ≤ 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2.5-5/22-44 Nm/lb.in.
Terminal connection torque (M8) 12-15/106-132 Nm/lb.in.
Weight Typical including screws 320 g
3671 542
31542
7
654
2
3
1
http://store.iiic.cc/
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Symbol Test Conditions Characteristic Values
IRRM TVJ = TVJM; VR = VRRM; VD = VDRM 70 mA
IDRM 40 mA
VT, VFIT, IF = 600 A; TVJ = 25°C 1.36 V
VT0 For power-loss calculations only (TVJ = 140°C) 0.85 V
rT0.82 mΩ
VGT VD = 6 V; TVJ = 25°C 2 V
TVJ = -40°C 3 V
IGT VD = 6 V; TVJ = 25°C 150 mA
TVJ = -40°C 200 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM 0.25 V
IGD 10 mA
ILTVJ = 25°C; tP = 30 µs; VD = 6 V 200 mA
IG = 0.45 A; diG/dt = 0.45 A/µs
IHTVJ = 25°C; VD = 6 V; RGK = ∞150 mA
tgd TVJ = 25°C; VD = 1/2 VDRM 2µs
IG = 1 A; diG/dt = 1 A/µs
tqTVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs typ. 200 µs
VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM
QSTVJ = 125°C; IT, IF = 400 A, -di/dt = 50 A/µs 760 µC
IRM 275 A
RthJC per thyristor/diode; DC current 0.129 K/W
per module other values 0.0645 K/W
RthJK per thyristor/diode; DC current see Fig. 8/9 0.169 K/W
per module 0.0845 K/W
dSCreepage distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Dimensions in mm (1 mm = 0.0394")
PSKT PSKH
Threaded spacer for higher Anode/
Cathode construction:
Type ZY 250, material brass
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
20 12
14
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POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Fig. 3 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
3xPSKT 250 or
3xPSKH 250
http://store.iiic.cc/
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
t
s
ZthJK
K/W
t
s
ZthJC
K/W 30°
DC
30°
DC
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
RthJC for various conduction angles d:
dR
thJC (K/W)
DC 0.129
180°C 0.131
120°C 0.131
60°C 0.132
30°C 0.132
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0035 0.099
2 0.0165 0.168
3 0.1091 0.456
RthJK for various conduction angles d:
dR
thJK (K/W)
DC 0.169
180°C 0.171
120°C 0.172
60°C 0.172
30°C 0.173
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0033 0.099
2 0.0159 0.168
3 0.1053 0.456
4 0.04 1.36
3xPSKT 250 or
3xPSKH 250
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