Target data
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
May 2007 Rev 1 1/7
7
STE70IE120
Monolithic Emitter Switched Bipolar Transistor
ESBT
®
1200 V - 70 A - 0.014 Power Module
General features
High voltage / high current Cascode
configuration
Ultra low equivalent on resistance
Very fast-switch, up to 150 kHz
Ultra low CISS
Low dynamic VCS(ON)
Description
The STE70DE120 is manufactured in monolithic
structure, to be used in industrial applications.
Applications
Solar
Welding
Internal schematic diagram
VCS(ON) ICRCS(ON)
1V 70A 0.014
W
ISOTOP
www.st.com
Order codes
Part number Marking Package Packaging
STE70IE120 E70IE120 ISOTOP Tube
Electrical ratings STE70IE120
2/7
1 Electrical ratings
1.1 Thermal data
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VCS(SS) Collector-source voltage (VBS = VGS = 0V) 1200 V
VBS(OS) Base-source voltage (IC = 0, VGS = 0V) 40 V
VSB(OS) Source-base voltage (IC = 0, VGS = 0V) 12 V
VGS Gate-source voltage ± 20 V
ICCollector current 70 A
ICM Collector peak current (tp < 5ms) 150 A
IBBase current 20 A
IBM Base peak current (tP < 1ms) 70 A
Ptot Total dissipation at TC = 25°C TBD W
TSTG Storage temperature -65 to 150 °C
TJMaximum operating junction temperature 150 °C
VISO Insulation withstand voltage (AC-RMS) from all
four leads to external heatsink
2500 V
Table 2. Thermal data
Symbol Parameter Value Unit
RthJ-case
Rthc-h
Thermal resistance junction-case (Max)
Thermal resistance case-heatsink with conductive
grease applied (Max)
TBD
TBD
°C/W
°C/W
STE70IE120 Electrical characteristics
3/7
2 Electrical characteristics
Table 3. Electrical characteristics
(T
Case =
25°C, unless otherwise specified)
Symbol Parameter Test Condition Min. Typ. Max. Unit
ICS(SS) Collector-source current
(VBS = VGS = 0)
VCE = 1200V 100 µA
IBS(OS) Base-source current
(IC = 0, VGS = 0V)
VBS(OS) = 40V 10 µA
ISB(OS) Source-base current
(IC = 0, VGS = 0)
VSB(OS) = 10V 100 µA
IGS(OS) Gate-source leakage VGS = ± 20V 500 nA
VCS(ON) Collector-source ON
voltage
VGS = 10V_IC = 70A IB = 14A
VGS = 10V_IC = 45A IB = 4.5A
1
1
V
V
hFE DC current gain VGS = 10V_VCS = 1V_IC = 70A
VGS = 10V_VCS = 1V_IC = 45A
3
6
7
13
VBS(ON) Base-emitter ON
voltage
VGS = 10V__IC = 70A _IB = 14A
VGS = 10V__IC = 45A_IB = 4.5A
tbd
tbd
V
V
VGS(th) Gate threshold voltage VBS = VGS __ IB = 250µA33.74.5V
Ciss Input Capacitance VCS = 25V __ f=1MHz
VGS = VCB = 0
tbd pF
QGS(tot) Gate-source charge VCS = 25V ___VGS = 10
VCB = 0______IC = 70A
tbd nC
Package Mechanical data STE70IE120
4/7
3 Package Mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPAC
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
STE70IE120 Package Mechanical data
5/7
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.8 12.2 0.465 0.480
A1 8.9 9.1 0.350 0.358
B 7.8 8.2 0.307 0.322
C 0.75 0.85 0.029 0.033
C2 1.95 2.05 0.076 0.080
D 37.8 38.2 1.488 1.503
D1 31.5 31.7 1.240 1.248
E 25.15 25.5 0.990 1.003
E1 23.85 24.15 0.938 0.950
E2 24.8 0.976
G 14.9 15.1 0.586 0.594
G1 12.6 12.8 0.496 0.503
G2 3.5 4.3 0.137 1.169
F 4.1 4.3 0.161 0.169
F1 4.6 5 0.181 0.196
P 4 4.3 0.157 0.169
P1 4 4.4 0.157 0.173
S 30.1 30.3 1.185 1.193
P093A
ISOTOP MECHANICAL DATA
Revision history STE70IE120
6/7
4 Revision history
Table 4. Document revision history
Date Revision Changes
04-May-2007 1 Initial EDOCS release
STE70IE120
7/7
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