1
Subject to change without notice.
www.cree.com/power
Datasheet: CPW4-1200S010 Rev. -
CPW4-1200S010B–Silicon Carbide Schottky Diode Chip
Z-RecTM RectifieR
Features
• 1200-Volt Schottky Rectier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Swtitching
• Positive Temperature Coefcient on VF
Chip Outline
Maximum Ratings
Symbol Parameter Value Unit Test Conditions Note
VRRM Repetitive Peak Reverse Voltage 1200 V
VRSM Surge Peak Reverse Voltage 1300 V
VDC DC Blocking Voltage 1200 V
IF(AVG) Average Forward Current 10 A TJ=175˚C
IFRM Repetitive Peak Forward Surge Current 47 A TC=25˚C, tP=10 ms, Half Sine Wave 1
IFSM Non-Repetitive Peak Forward Surge Current 71 A TC=25˚C, tP=10 ms, Half Sine Wave 1
TJ , Tstg Operating Junction and Storage Temperature -55 to
+175 ˚C
Part Number Anode Cathode Package Marking
CPW4-1200S010B Al Ni/Ag Sawn on Foil Wafer # on Foil
VRRM = 1200 V
IF(AVG) = 10 A
Qc = 66 nC
2CPW4-1200S010 Rev. -
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForward Voltage 1.5
2.2
1.8
3VIF = 10 A TJ=25°C
IF = 10 A TJ=175°C
IRReverse Current 30
55
250
350 μA VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
QCTotal Capacitive Charge 66 nC
VR = 600 V, IF = 2 A
di/dt = 500 A/μs
TJ = 25°C
C Total Capacitance
754
45
38
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Note:
1. Assumes θJC Thermal Resistance of 1.1˚C/W or less
Mechanical Parameters
Parameter Typ. Unit
Die Size 2.26 x 2.26 mm
Anode Pad Size 1.98 x 1.98 mm
Anode Pad Opening 1.70 x 1.70 mm
Thickness 377 ± 10% μm
Wafer Size 100 mm
Anode Metalization (Al) 4μm
Cathode Metalization (Ni/Ag) 1.4 μm
Frontside Passivation Polyimide
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This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac debrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air trafc control systems, or weapons systems.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc.
3CPW4-1200S010 Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
Chip Dimensions
Part Number Anode Cathode Package Marking
CPW4-1200S010B Al Ni/Ag Sawn on Foil Wafer # on Foil
The die-on-tape method of delivering these SiC die may be considered a means of temporary storage only. Due
to an increase in adhesion over time, die stored for an extended period may afx too strongly to the tape. These
die should be stored in a temperature-controlled nitrogen dry box soon after receipt. Cree will further recommend
that all die be removed from tape to a wafe pack, to a similar storage medium, or used in production within 2
– 3 weeks of delivery to assure 100% release of all die without issues.
symbol dimension
mm inch
A 2.26 0.089
B 2.26 0.089
C 1.70 0.067
D 1.70 0.067
A
B
C
D