Advanced Technical Information IXGR 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE(sat) (Electrically Isolated Back Surface) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 54 A IC110 TC = 110C 28 A IF110 ICM TC = 110C TC = 25C, 1 ms 8 200 A A SSOA (RBSOA) VGE = 15 V, TJ = 125C, RG = 10 Clamped inductive load ICM = 120 @0.8 VCES A PC TC = 25C 250 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 2500 3000 V~ V~ 22...130/5...29 N/lb 300 C TJ VISOL 50/60 Hz, RMS, t = 1 min ISOL = 1mA, t = 1 s FC Mounting force Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol 6 Test Conditions (TJ = 25C, unless otherwise specified) min. = 250 A, VCE = VGE VGE(th) IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = 35A, VGE = 15 V Note 2 (c) 2004 IXYS All rights reserved G typ. 2.5 T=25C T=125C 2.8 5.0 V 50 250 A A 100 nA 3.5 V E C = Collector TAB = Electrically Isolated Features z z z Silicon chip on DCB substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages z max. (TAB) C G = Gate E = Emitter g Characteristic Values V A V ns ISOPLUS247 (IXGR) z Weight = 1200 = 54 = 3.5 = 160 z z Saves space (two devices in one package) Easy to mount Reduces assembly time and cost DS99204(09/04) IXGR 35N120BD1 Symbol Test Conditions gfs IC = 35A; VCE = 10 V, Note 2. Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 28 38 S 2300 pF 190 pF Cres 80 pF Qg 140 nC 20 nC 50 nC 40 ns 50 0.9 ns mJ Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 40A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri Eon td(off) tfi Inductive load, TJ = 25C IC = 35 A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 3 Note 1. Eoff td(on) tri Eon Inductive load, TJ = 125C IC = 35A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 3 270 500 ns 160 300 ns 3.8 7.0 mJ 45 ns 60 ns 1.9 mJ 380 ns tfi 400 ns Eoff 8.0 mJ td(off) Note 1 0.5 K/W RthJC RthCK 0.25 Reverse Diode (FRED) K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 10 A, VGE = 0 V IF = 10 A, VGE = 0 V, TJ = 125C 3.3 2.2 IRM IF = 10 A; -diF/dt = 100 A/s, VR = 100 V t rr VGE = 0 V; TJ = 125C t rr IF = 1 A; -diF/dt = 100 A/s; VR = 30 V, VGE = 0 V V V 4.0 A 190 ns 40 ns 2.5 K/W RthJC Notes: ISOPLUS247 Outline 1. Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG. 2. Pulse test, t 300 s, duty cycle d 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585