© 2004 IXYS All rights reserved
G = Gate C = Collector
E = Emitter TAB = Electrically
Isolated
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C54A
IC110 TC= 110°C28A
IF110 TC= 110°C8A
ICM TC= 25°C, 1 ms 200 A
SSOA VGE = 15 V, TJ = 125°C, RG = 10 Ω ICM = 120 A
(RBSOA) Clamped inductive load @0.8 VCES
PCTC= 25°C 250 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60 Hz, RMS, t = 1 min 2500 V~
ISOL = 1mA, t = 1 s 3000 V~
F
CMounting force 22...130/5...29 N/lb
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VGE(th) IC= 250 µA, VCE = VGE 2.5 5.0 V
ICES VCE = VCES T=25°C50µA
VGE = 0 V T=125°C 250 µA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC = 35A, VGE = 15 V 2.8 3.5 V
Note 2
Features
zSilicon chip on DCB substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
zIGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
zMOS Gate turn-on
- drive simplicity
zFast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
Advantages
zSaves space (two devices in one
package)
zEasy to mount
zReduces assembly time and cost
DS99204(09/04)
High Voltage IGBT
with Diode
(Electrically Isolated Back Surface)
IXGR 35N120BD1 VCES = 1200 V
IC25 =54A
VCE(sat) = 3.5 V
tfi(typ) = 160 ns
Advanced Technical Information
ISOPLUS247 (IXGR)
GCE
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGR 35N120BD1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= 35A; VCE = 10 V, 28 38 S
Note 2.
Cies 2300 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 190 pF
Cres 80 pF
Qg140 nC
Qge IC = 40A, VGE = 15 V, VCE = 0.5 VCES 20 nC
Qgc 50 nC
td(on) 40 ns
tri 50 ns
Eon 0.9 mJ
td(off) 270 500 ns
tfi 160 300 ns
Eoff 3.8 7.0 mJ
td(on) 45 ns
tri 60 ns
Eon 1.9 mJ
td(off) 380 ns
tfi 400 ns
Eoff 8.0 mJ
RthJC 0.5 K/W
RthCK 0.25 K/W
Inductive load, TJ = 125°°
°°
°C
IC = 35A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 3 Ω
Note 1
Inductive load, TJ = 25°°
°°
°C
IC = 35 A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 3 Ω
Note 1.
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ
or increased RG.
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = 10 A, VGE = 0 V 3.3 V
IF = 10 A, VGE = 0 V, TJ = 125°C 2.2 V
IRM IF = 10 A; -diF/dt = 100 A/µs, VR = 100 V 4.0 A
trr VGE = 0 V; TJ = 125°C 190 ns
trr IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V 40 ns
RthJC 2.5 K/W
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
ISOPLUS247 Outline
