HSD278
Silicon Schottky Barrier Diode
ADE-208-1015 (Z)
Rev.0
Dec. 2000
Features
• Low forward voltage, Low capacitance.
• Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. Laser Mark Package Code
HSD278 S1 SFP
Outline
Cathode mark
Mark
1. Cathode
2. Anode
12
S1
HSD278
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse voltage VRRM 30 V
Reverse voltage VR30 V
Non-Repetitive peak forward surge current IFSM * 200 mA
Peak forward current IFM 150 mA
Average rectified current IO30 mA
Junction temperature Tj 125 °C
Storage temperature Tstg −55 to +125 °C
Note:10 msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage VF1 — — 0.30 V IF = 1 mA
VF2 — — 0.95 IF = 30 mA
Reverse current IR— — 700 nA VR = 10 V
Capacitance C — — 1.50 pF VR = 1 V, f = 1 MHz
ESD-Capability *1— 100 — — V C = 200 pF, RL = 0 Ω, Both forward and
reverse direction 1 pulse.
Notes:1. Failure criterion ; IR ≥ 1.4 µA at VR = 10 V
2. Please do not use the soldering iron due to avoid high stress to the SFP package.
HSD278
3
Main Characteristic
Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage
Fig.3 Capacitance Vs. Reverse voltage
1.0
Forward voltage V
F
(V)
Reverse voltage V
R
(V)
Reverse voltage V
R
(V)
Forward current I
F
(A)
Reverse current I
R
(A)
Capacitance C (pF)
0
0.1
10
10
0.1
1.0
15 2010
0 0.80.2 0.4 0.6
10
1
10
−8
10
−8
10
−7
10
−6
10
−5
10
−4
10
−7
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
10
0
1.0
Ta = 25°C
Ta = 25°C
Ta = 75°C
5
f=1MHz
Ta = 75°C
HSD278
4
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
SFP
—
—
0.0010 g
Unit: mm
1.0 ± 0.10
1.4 ± 0.10
0.3 ± 0.05
0.6 ± 0.05
0.5 – 0.05
0.13 ± 0.05
HSD278
5
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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