TLP127
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TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP127
Programmable Controllers
DC−Output Module
Telecommunication
The TOSHIBA mini-flat coupler TLP127 is a small outline coupler,
suitable for surface mount assembly.
TLP127 consists of a gallium arsenide infrared emitting diode, optically
coupled to a Darlington photo transistor with an integral base−emitter
resistor, and provides 300V VCEO.
• Collector−emitter voltage: 300 V (min)
• Current transfer ratio: 1000 % (min)
• Isolation voltage: 2500 Vrms (min)
• UL recognized: UL1577, file no. E67349
• BSI approved: BS EN60065:2002, certificate no.8927
BS EN60950-1:2002, certificate no.8928
Pin Configurations (top view)
TOSHIBA 11−4C1
Weight: 0.09 g (typ.)
Unit: mm
1: ANODE
3: CATHODE
4: EMITTER
6: COLLECTOR
6
4
3
1
Start of commercial production
1988
/
04
TLP127
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
LED
Forward current IF 50 mA
Forward current derating ∆IF / °C −0.7 (Ta ≥ 53°C) mA / °C
Pulse forward current IFP 1 (100μs pulse, 100pps) A
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Detector
Collector−emitter voltage VCEO 300 V
Emitter−collector voltage VECO 0.3 V
Collector current IC 150 mA
Collector power dissipation PC 150 mW
Collector power dissipation
derating (Ta ≥ 25°C) ∆PC / °C −1.5 mW / °C
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Operating temperature range Topr −55~100 °C
Lead soldering temperature Tsol 260 (10s) °C
Total package power dissipation PT 200 mW
Total package power dissipation
derating (Ta ≥ 25°C) ∆PT / °C −2.0 mW / °C
Isolation voltage (Note 1) BVS 2500 (AC, 1minute, R.H.≤ 60%) Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
(Note 1) Device considered a two terminal device: Pins 1, 3 shorted together and pins 4, 6 shorted together.
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage VF I
F = 10 mA 1.0 1.15 1.3 V
Reverse current IR V
R = 5V ― ― 10 μA
Capacitance CT V = 0, f = 1 MHz ― 30 ― pF
Detector
Collector−emitter breakdown voltage V(BR) CEO I
C = 0.1 mA 300 ― ― V
Emitter−collector breakdown voltage V(BR) ECO I
E = 0.1 mA 0.3 ― ― V
Collector dark current ICEO
VCE = 200 V ― 10 200 nA
VCE = 200 V, Ta = 85°C ― ― 20 μA
Capacitance collector to emitter CCE V = 0, f = 1 MHz ― 12 ― pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition MIn Typ. Max Unit
Current transfer ratio IC / IF IF = 1mA, VCE = 1 V 1000 4000 ― %
Saturated CTR IC / IF (sat) IF = 10 mA, VCE = 1 V 500 ― ― %
Collector−emitter saturation voltage VCE (sat)
IC = 10 mA, IF = 1 mA ― ― 1.0
V
IC = 100 mA, IF = 10 mA 0.3 ― 1.2
Off−state collector current IC (off) VF = 0.7 V, VCE = 200 V ― ― 20 μA
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Capacitance (input to output) CS VS = 0, f = 1 MHz ― 0.8 ― pF
Isolation resistance RS VS = 500 V, R.H.≤ 60% 5×1010 1014 ― Ω
Isolation voltage BVS
AC, 1 minute 2500 ― ―
Vrms
AC, 1 second, in oil ― 5000 ―
DC, 1 minute, in oil ― 5000 ― V
dc
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Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Rise time tr
VCC = 10 V, IC = 10 mA
RL = 100 Ω
― 40 ―
μs
Fall time tf ― 15 ―
Turn−on time ton ― 50 ―
Turn−off time toff ― 15 ―
Turn−on time tON
RL = 180 Ω (Fig.1)
VCC = 10 V, IF = 16 mA
― 5 ―
μs
Storage time ts ― 40 ―
Turn−off time tOFF ― 80 ―
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC ― ― 200 V
Forward current IF ― 16 25 mA
Collector current IC ― ― 120 mA
Operating temperature Topr −25 ― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Fig. 1 Switching time test circuit
IF VCC
VCE
RL VCC
VCE
IF
tON tOFF
ts
9V
1V
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IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF
(
mA
)
0
100
−20
80
60
40
20
0 20
40 60 80 120 100
PC – Ta
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
200
0
−20
160
120
80
40
0 20 40 60 80 120 100
∆VF / ∆Ta – IF
Forward current IF (mA)
Forward voltage temperature
coefficient ∆VF / ∆Ta ( m V / °C )
−3.2
−0.4
0.1
−0.8
−2.8
−2.0
−1.6
−1.2
0.3
−2.4
1 5 50 0.5 3 10 30
IFP – DR
Duty cycle ratio DR
Pulse forward current IFP (mA)
3000
10
3
30
1000
300
100
50
10−3
500
10−210−1 100 3 3 3
Pulse width ≤ 100μs
Ta = 2 5°C
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.1
0.6
50
5
1
0.5
0.8 1.0 1.2 1.4 1.6 1.8
30
10
3
0.3
Ta = 2 5°C
IFP – VFP
Pulse forward voltage VFP (V)
Pulse forward current IFP (mA)
1000
1.0 1.4 1.8 2.2 2.6 3.0
1
0.6
500
300
100
50
30
10
5
3
Pulse width ≤ 10μs
Repetitive
Frequency = 100Hz
Ta = 2 5°C
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Collector–emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
0
160
0.4
120
80
40
0.8 1.2
1.6 2.0
1mA
2mA
4mA
10mA
Ta = 2 5°C
IF = 0.5mA
Load resistance RL (kΩ)
Switching Time – RL
Switching time (μs)
1000
1
50
10
500
100
30
300
300
3k 10k 1k 5k
3
5
100
50
500
tOFF(IF = 16mA)
tOFF(IF = 1.6mA)
tON(IF = 1.6mA)
tON(IF = 16mA)
Ta = 2 5°C
VCC = 10V
IC – IF
Forward current IF (mA)
Collector current IC (mA)
300
1
0.5
100
10
1 3 10 30 100
30
50
3
5
5 50
Sample A
Sample B
Ta = 2 5°C
V
CE = 1.2V
V
CE = 1V
IC / IF – IF
Forward current IF (mA)
Current transfer ratio IC / IF (%)
10000
100
0.3 0.5 3
5 10 30 50
5000
1000
500
300
1
3000
Ta = 2 5°C
V
CE = 1.2V
V
CE = 1V
Sample B
Sample A
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ICEO – Ta
Ambient temperature Ta (℃)
Collector dark current ICEO (μA)
101
10−4
0 20 40 60 100 80
10−1
100
10−2
10−3
VCE = 200V
150V
80V
IC – Ta
Ambient temperature Ta (℃)
Collector current IC (mA)
120
0
-20
80
0 20 40 60 80 100
100
60
40
20
-40
IF = 10mA
1mA
VCE = 1V
V
CE(sat) – Ta
Ambient temperature Ta (℃)
Collector-emitter saturation
voltage VCE(sat) (V)
1.2
0
0.4
1.0
0.8
0.6
0.2
-20 0 20 40 60 80 100 -40
IF = 1mA
IC = 10mA
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in this document, and related hardware, software and systems (collectively "Product") without notice.
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relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for
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