AOT22N50/AOTF22N50
500V,22A N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 22A
R
DS(ON)
(at V
GS
=10V) < 0.26Ω
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOT22N50L&AOTF22N50L
The AOT22N50 & AOTF22N50 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche
capability these parts can be adopted quickly into new and
existing offline power supply designs.
600V@150℃
Form Minimum Order QuantityOrderable Part Number Package Type
AOT22N50L TO220 Green Tube 1000
G
D
S
Top View
TO
-
220F
TO
-
220
GDS
GDS
AOT22N50 AOTF22N50
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
E
AS
Peak diode recovery dv/dt dv/dt
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θCS
R
θJC
* Drain current limited by maximum junction temperature.
2.5
417 50
3.3 0.4
AOT22N50 AOTF22N50
0.5 --
65 65
0.3 °C/W
Units
A
°C
mJ
W
W/
o
C
°C/W
°C/W
°C
Thermal Characteristics
Parameter
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Junction and Storage Temperature Range
Derate above 25
C
Maximum Junction-to-Ambient
A,D
VGate-Source Voltage
V/ns
mJRepetitive avalanche energy
C
T
C
=100°C A
Pulsed Drain Current
C
Continuous Drain
Current
T
C
=25°C I
D
22 22*
15 15*
5
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Drain-Source Voltage
AOT22N50 AOTF22N50 AOTF22N50L
TO-220F Green
AOTF22N50 TO-220F Pb Free
Maximum Junction-to-Case
Avalanche Current
C
Single plused avalanche energy
G
Power Dissipation
B
P
D
T
C
=25°C
Maximum Case-to-sink
A
39
0.3
-55 to 150
300
65
--
3.2
AOTF22N50L
22*
15*
500
±30
88
7
735
1470
AOTF22N50L Tube 1000
Tube 1000
Rev.2.0: October 2014
www.aosmd.com Page 1 of 6
Symbol Min Typ Max Units
500
600
BV
DSS
/
∆TJ
0.57 V/
o
C
1
10
I
GSS
Gate-Body leakage current ±100 nΑ
V
GS(th)
Gate Threshold Voltage 3.4 4 4.5 V
R
DS(ON)
0.21 0.26 Ω
g
FS
25 S
V
SD
0.7 1 V
I
S
Maximum Body-Diode Continuous Current 22 A
I
SM
88 A
C
iss
2465 3086 3710 pF
C
oss
200 290 380 pF
C
rss
14 24 35 pF
R
g
0.7 1.4 2.1 Ω
Q
g
55 69 83 nC
Q
gs
17 22 27 nC
Q
gd
12 24 36 nC
t
D(on)
60 ns
t
r
122 ns
t
D(off)
124 ns
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
Turn-Off DelayTime
V
GS
=10V, V
DS
=250V, I
D
=22A,
R
G
=25Ω
Gate resistance
DYNAMIC PARAMETERS
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Diode Forward Voltage I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=11A
Forward Transconductance
V
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
V
GS
=10V, I
D
=11A
Total Gate Charge
V
GS
=10V, V
DS
=400V, I
D
=22A
Turn-On Rise Time
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
V
DS
=400V, T
J
=125°C
Zero Gate Voltage Drain Current V
DS
=500V, V
GS
=0V µA
BV
DSS
Static Drain-Source On-Resistance
V
DS
=0V, V
GS
=±30V
V
DS
=5V
I
D
=250µA
I
DSS
Breakdown Voltage Temperature
Coefficient I
D
=250µA, V
GS
=0V
D(off)
t
f
77 ns
t
rr
415 524 630 ns
Q
rr
7.5 9.6 12 µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=22A,dI/dt=100A/µs,V
DS
=100V
Body Diode Reverse Recovery Time I
F
=22A,dI/dt=100A/µs,V
DS
=100V
Turn-Off Fall Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=7A, VDD=150V, RG=25Ω, Starting TJ=25°C
Rev.2.0: October 2014 www.aosmd.com Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
0 5 10 15 20 25 30
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=5.5V
6V
10V
6.5V
0.1
1
10
100
0 2 4 6 8 10
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
-
55
°
C
V
DS
=40V
25°C
125
°
C
0.0
0.1
0.2
0.3
0.4
0 5 10 15 20 25
RDS(ON) (Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
VGS=10V
0
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=10V
ID=11A
40
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
Gate Voltage
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
BVDSS (Normalized)
TJ (°C)
Figure 5: Break Down vs. Junction Temperature
Rev.2.0: October 2014 www.aosmd.com Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 20 40 60 80 100
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
VDS=400V
ID=22A
10
100
1000
10000
0.1 1 10 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
C
iss
Coss
Crss
0.01
0.1
1
10
100
1 10 100 1000
ID(Amps)
V
(Volts)
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
1s
0.01
0.1
1
10
100
1 10 100 1000
ID(Amps)
V
(Volts)
10µs
1ms
10ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100µs
V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOTF22N50 (Note F)
0
5
10
15
20
25
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 11: Current De-rating (Note B)
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT22N50 (Note F)
0.01
0.1
1
10
100
1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 12: Maximum Forward Biased Safe Operating
Area for AOTF22N50L (Note F)
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
1s
10µs
Rev.2.0: October 2014 www.aosmd.com Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF22N50 (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
Ton
T
PDM
0.001
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOT22N50 (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
Ton
T
PDM
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF22N50 (Note F)
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF22N50L (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Ton
T
PD
Ton
T
P
DM
Rev.2.0: October 2014 www.aosmd.com Page 5 of 6
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vgs
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Tes t Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev.2.0: October 2014 www.aosmd.com Page 6 of 6