Symbol Min Typ Max Units
500
600
BV
DSS
0.57 V/
o
C
1
10
I
GSS
Gate-Body leakage current ±100 nΑ
V
GS(th)
Gate Threshold Voltage 3.4 4 4.5 V
R
DS(ON)
0.21 0.26 Ω
g
FS
25 S
V
SD
0.7 1 V
I
S
Maximum Body-Diode Continuous Current 22 A
I
SM
88 A
C
iss
2465 3086 3710 pF
C
oss
200 290 380 pF
C
rss
14 24 35 pF
R
g
0.7 1.4 2.1 Ω
Q
g
55 69 83 nC
Q
gs
17 22 27 nC
Q
gd
12 24 36 nC
t
D(on)
60 ns
t
r
122 ns
t
124 ns
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
Turn-Off DelayTime
V
GS
=10V, V
DS
=250V, I
D
=22A,
R
G
=25Ω
Gate resistance
DYNAMIC PARAMETERS
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Diode Forward Voltage I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=11A
Forward Transconductance
V
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
V
GS
=10V, I
D
=11A
Total Gate Charge
V
GS
=10V, V
DS
=400V, I
D
=22A
Turn-On Rise Time
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
V
DS
=400V, T
J
=125°C
Zero Gate Voltage Drain Current V
DS
=500V, V
GS
=0V µA
BV
DSS
Static Drain-Source On-Resistance
V
DS
=0V, V
GS
=±30V
V
DS
=5V
I
D
=250µA
I
DSS
Breakdown Voltage Temperature
Coefficient I
D
=250µA, V
GS
=0V
t
f
77 ns
t
rr
415 524 630 ns
Q
rr
7.5 9.6 12 µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=22A,dI/dt=100A/µs,V
DS
=100V
Body Diode Reverse Recovery Time I
F
=22A,dI/dt=100A/µs,V
DS
=100V
Turn-Off Fall Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=7A, VDD=150V, RG=25Ω, Starting TJ=25°C
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