CM100RX-24S - Powerex - Product.Network

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

www.pwrx.com Six IGBTMOD™ + Brake

NX-S Series Module

100 Amperes/1200 Volts

CM100RX-24S

104/10 Rev. 0

Description:

Powerex IGBTMOD™ Modules

are designed for use in switching

applications. Each module

consists of six IGBT Transistors in

a three phase bridge configuration

and a seventh IGBT with free-

wheel diode for dynamic braking.

All components and interconnects

are isolated from the heat sinking

baseplate, offering simplified

system assembly and thermal

management.

Features:

£ Low Drive Power

£ Low VCE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control

£ Motion/Servo Control

£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete

module number you desire from

the table below -i.e.

CM100RX-24S is a 1200V (VCES),

100 Ampere Six-IGBTMOD™ +

Brake Power Module.

Type Current Rating VCES

Amperes Volts (x 50)

CM 100 24

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.39 136.9

B 3.03 77.1

C 0.67 17.0

D 4.79 121.7

E 4.33±0.02 110.0±0.5

F 3.89 99.0

G 3.72 94.5

H 0.83 21.14

J 0.37 6.5

K 2.44 62.0

L 2.26 57.5

M 1.97±0.02 50.0±0.5

N 1.53 39.0

P 0.24 6.0

Q 0.48 12.0

R 0.67 17.0

S 1.53 39.0

T 0.87 22.0

U 0.55 14.0

V 0.54 13.64

W 0.33 8.5

X 0.53 13.5

Y 0.81 20.71

Z 0.9 22.86

AA 0.22 Dia. 5.5 Dia.

AB M5 M5

AC 0.67 17.0

Dimensions Inches Millimeters

AD 0.51 13.0

AE 0.12 3.0

AF 0.21 5.4

AG 0.49 12.5

AH 0.81 20.5

AJ 0.30 7.75

AK 0.28 7.25

AL 0.15 3.81

AM 0.45 11.44

AN 0.14 3.5

AP 0.16 4.06

AQ 0.78 20.05

AR 0.03 0.8

AS 0.27 7.0

AT 0.16 4.2

AU 0.61 15.48

AV 0.60 15.24

AW 0.46 11.66

AX 0.04 1.15

AY 0.02 0.65

AZ 0.29 7.4

BA 0.24 6.2

BB 0.49 12.5

BC 0.17 Dia. 4.3 Dia.

BD 0.10 Dia. 2.5 Dia.

BE 0.08 Dia. 2.1Dia.

P(35)

B(4)

GWN(14)

GWP(18)

EWP(17)

GVN(22)

GVP(26)

EVP(25)

GUN(30)

EWN(13)EVN(21)EUN(29)

GUP(34)

EUP(33)

U(1) V(2) W(3)

GB(6)

N(36)

TH1

(11)

TH2

(10)

NTC

EB(5)

X Y Z Z

N M L K B

AMAMAM

AMAM

ALALAL

ALAL

P W

AA(4 PLACES)

DETAIL "B"

*ALL PIN DIMENSIONS WITHIN

A TOLERANCE OF ±0.5

(6 PLACES)

DETAIL "A"

34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13

1 2 3 4

DETAIL "B"

AC AT

AD AE

DETAIL "A"

CM100RX-24S

Six IGBTMOD™ + Brake NX-S Series Module

100 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

2 04/10 Rev. 0

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol CM100RX-24S Units

Maximum Junction Temperature Tj(max) +175 °C

Operating Power Device Junction Temperature Tj(op) -40 to 150 °C

Storage Temperature Tstg -40 to 125 °C

Mounting Torque, M5 Mounting Screws — 31 in-lb

Mounting Torque, M5 Main Terminal Screws — 31 in-lb

Module Weight (Typical) — 330 Grams

Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) VISO 2500 Vrms

Inverter Sector

Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts

Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts

Collector Current (DC, TC = 118°C)*1,*5 I

C 100 Amperes

Collector Current (Pulse)*4 I

CRM 200 Amperes

Total Power Dissipation (TC = 25°C)*1,*5 P

tot 750 Watts

Emitter Current, Free Wheeling Diode Forward Current (TC = 25°C)*1,*5 IE*3 100 Amperes

Emitter Current, Free Wheeling Diode Forward Current (Pulse)*4 IERM*3 200 Amperes

Brake Sector

Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts

Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts

Collector Current (DC, TC = 125°C)*1,*5 I

C 50 Amperes

Collector Current (Pulse)*4 I

CRM 100 Amperes

Total Power Dissipation (TC = 25°C)*1,*5 P

tot 425 Watts

Repetitive Peak Reverse Voltage VRRM*3 1200 Volts

Forward Current (TC = 25°C)*1,*5 I

F*3 50 Amperes

Forward Current (Pulse)*4 I

FM*3 100 Amperes

*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.

*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).

*4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.

*5 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.

CM100RX-24S

Six IGBTMOD™ + Brake NX-S Series Module

100 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

304/10 Rev. 0

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Inverter Sector

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector Cutoff Current ICES V

CE = VCES, VGE = 0V — — 1 mA

Gate Leakage Current IGES ±VGE = VGES, VCE = 0V — — 0.5 µA

Gate-Emitter Threshold Voltage VGE(th) I

C = 10mA, VCE = 10V 5.4 6 6.6 Volts

Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C — 1.7 2.15 Volts

(Chip) IC = 100A, VGE = 15V, Tj = 125°C — 1.9 — Volts

IC = 100A, VGE = 15V, Tj = 150°C — 1.95 — Volts

Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C*6 — 1.8 2.25 Volts

(Terminal) IC = 100A, VGE = 15V, Tj = 125°C*6 — 2.0 — Volts

IC = 100A, VGE = 15V, Tj = 150°C*6 — 2.05 — Volts

Input Capacitance Cies — — 10 nF

Output Capacitance Coes V

GE = 0V, VCE = 10V — — 2.0 nF

Reverse Transfer Capacitance Cres — — 0.17 nF

Total Gate Charge QG V

CC = 600V, IC = 100A, VGE = 15V — 233 — nC

Inductive Turn-on Delay Time td(on) — — 300 ns

Load Turn-on Rise Time tr V

CC = 600V, IC = 100A, *7 — — 200 ns

Switch Turn-off Delay Time td(off) V

GE = ±15V, — — 600 ns

Time Turn-off Fall Time tf R

G = 27Ω, Inductive Load, — — 300 ns

Reverse Recovery Time trr*3 I

E = 100A — — 300 ns

Reverse Recovery Charge Qrr*3 — 5.3 — µC

Turn-on Switching Loss per Pulse Eon V

CC = 600V, IC (IE) = 100A, *7 — 16.7 — mJ

Turn-off Switching Loss per Pulse Eoff V

GE = ±15V, RG = 27Ω, — 10.7 — mJ

Reverse Recovery Loss per Pulse Erec*3 T

j = 150°C, Inductive Load — 6.0 — mJ

Emitter-Collector Voltage VEC*3 I

E = 100A, VGE = 0V, Tj = 25°C — 1.7 2.15 Volts

(Chip) IE = 100A, VGE = 0V, Tj = 125°C — 1.7 — Volts

E = 100A, VGE = 0V, Tj = 150°C — 1.7 — Volts

Emitter-Collector Voltage VEC*3 I

E = 100A, VGE = 0V, Tj = 25°C*6 — 1.8 2.25 Volts

(Terminal) IE = 100A, VGE = 0V, Tj = 125°C*6 — 1.8 — Volts

E = 100A, VGE = 0V, Tj = 150°C*6 — 1.8 — Volts

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case*1 R

th(j-c)Q Per IGBT — — 0.20 K/W

Thermal Resistance, Junction to Case*1 R

th(j-c)D Per FWDi — — 0.29 K/W

Internal Gate Resistance rg Per Switch — 0 — Ω

*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.

*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).

*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.

*7 Recommended maximum collector supply voltage VCC is 800Vdc.

CM100RX-24S

Six IGBTMOD™ + Brake NX-S Series Module

100 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

4 04/10 Rev. 0

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Brake Sector

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector Cutoff Current ICES V

CE = VCES, VGE = 0V — — 1 mA

Gate Leakage Current IGES ±VGE = VGES, VCE = 0V — — 0.5 µA

Gate-Emitter Threshold Voltage VGE(th) I

C = 5mA, VCE = 10V 5.4 6 6.6 Volts

Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V, Tj = 25°C — 1.7 2.15 Volts

(Chip) IC = 50A, VGE = 15V, Tj = 125°C — 1.9 — Volts

IC = 50A, VGE = 15V, Tj = 150°C — 1.95 — Volts

Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V, Tj = 25°C*6 — 1.8 2.25 Volts

(Terminal) IC = 50A, VGE = 15V, Tj = 125°C*6 — 2.0 — Volts

IC = 50A, VGE = 15V, Tj = 150°C*6 — 2.05 — Volts

Input Capacitance Cies — — 5.0 nF

Output Capacitance Coes V

GE = 0V, VCE = 10V — — 1.0 nF

Reverse Transfer Capacitance Cres — — 0.08 nF

Total Gate Charge QG V

CC = 600V, IC = 50A, VGE = 15V — 117 — nC

Repetitive Peak Reverse Current IRRM*3 V

R = VRRM — — 1 mA

Forward Voltage Drop VEC*3 I

E = 50A, VGE = 0V, Tj = 25°C — 1.7 2.15 Volts

(Chip) IE = 50A, VGE = 0V, Tj = 125°C — 1.7 — Volts

E = 50A, VGE = 0V, Tj = 150°C — 1.7 — Volts

Forward Voltage Drop VEC*3 I

E = 50A, VGE = 0V, Tj = 25°C*6 — 1.8 2.25 Volts

(Terminal) IE = 50A, VGE = 0V, Tj = 125°C*6 — 1.8 — Volts

E = 50A, VGE = 0V, Tj = 150°C*6 — 1.8 — Volts

*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).

*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.

CM100RX-24S

Six IGBTMOD™ + Brake NX-S Series Module

100 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

504/10 Rev. 0

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case*1 R

th(j-c)Q Per IGBT — — 0.35 K/W

Thermal Resistance, Junction to Case*1 R

th(j-c)D Per Clamp Diode — — 0.63 K/W

Internal Gate Resistance Rg Per Switch — 0 — Ω

NTC Thermistor Sector, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Zero Power Resistance R TC = 25°C 4.85 5.00 5.15 kΩ

Deviation of Resistance ∆R/R TC = 100°C, R100 = 493Ω –7.3 — +7.8 %

B Constant B(25/50) Approximate by Equation*9 — 3375 — K

Power Dissipation P25 T

C = 25°C — — 10 mW

Module, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Lead Resistance (Main Terminals-Chip) Rlead TC = 25°C (Per Switch) — — 2.2 mΩ

Contact Thermal Resistance*1 R

th(c-f) Thermal Grease Applied — 0.015 — K/W

(Case to Heatsink) (Per 1 Module)*2

*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.

*2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].

*9 B(25/50) = In( R25)/( 1 – 1 ) R25; Resistance at Absolute Temperature T25 [K], R50; resistance at Absolute Temperature T50 [K],

R50 T25 T50

T25 = 25 [°C] + 273.15 = 298.15 [K], T50 = 50 [°C] + 273.15 = 323.15 [K]

CM100RX-24S

Six IGBTMOD™ + Brake NX-S Series Module

100 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

6 04/10 Rev. 0

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, Cies, Coes, Cres, (nF)

CAPACITANCE VS. VCE

(INVERTER PART - TYPICAL)

100102

102

101

100

10-2

10-1

101

0 1.0 0.5 2.51.5 2.0 3.0

100

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(INVERTER PART - CHIP - TYPICAL)

102

101

103

EMITTER CURRENT, IE, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, VCE(sat), (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(INVERTER PART - CHIP - TYPICAL)

6 8 10 1412 16 18 20

Tj = 25°C

VGE = 0V

Cies

Coes

Cres

IC = 200A

IC = 100A

IC = 40A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, IC, (AMPERES)

OUTPUT CHARACTERISTICS

(INVERTER PART - CHIP - TYPICAL)

0 2 4 6 8 10

VGE = 20V

13.5

Tj =

25°C

200

100

150

COLLECTOR CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, VCE(sat), (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(INVERTER PART - CHIP - TYPICAL)

3.5

2.5

3.0

2.0

1.5

0.5

1.0

020010050 150

VGE = 15V

Tj = 25°C

Tj = 125°C

Tj = 150°C

10-1

COLLECTOR CURRENT, IC, (AMPERES)

103

101102

102

101

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(INVERTER PART - TYPICAL)

td(off)

td(on)

VCC = 600V

VGE = ±15V

RG = 27Ω

Tj = 150°C

Inductive Load

103

GATE RESISTANCE, RG, (Ω)

103

100101

101

102

SWITCHING TIME, (ns)

SWITCHING TIME VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

td(off)

td(on)

VCC = 600V

VGE = ±15V

IC = 100A

Tj = 150°C

Inductive Load

102

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

GATE CHARGE VS. VGE

(INVERTER PART)

100 200 300 400

IC = 100A

VCC = 600V

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY CHARACTERISTICS

(INVERTER PART - TYPICAL)

103

101102

102

101

103

VCC = 600V

VGE = ±15V

RG = 27Ω

Tj = 150°C

Inductive Load

Irr

trr

REVERSE RECOVERY, Irr (A), trr (ns)

Tj = 25°C

Tj = 125°C

Tj = 150°C

CM100RX-24S

Six IGBTMOD™ + Brake NX-S Series Module

100 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

704/10 Rev. 0

TIME, (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(INVERTER PART - TYPICAL)

100

10-5 10-4 10-3

10-1

10-2

10-3

10-3 10-2 10-1 100101

10-1

10-2

10-3

Zth = Rth • (NORMALIZED VALUE)

Single Pulse

TC = 25°C

Per Unit Base =

Rth(j-c) =

0.20°C/W

(IGBT)

Rth(j-c) =

0.29°C/W

(FWDi)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')

TIME, (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(BRAKE PART - TYPICAL)

100

10-5 10-4 10-3

10-1

10-2

10-3

10-3 10-2 10-1 100101

10-1

10-2

10-3

Zth = Rth • (NORMALIZED VALUE)

Single Pulse

TC = 25°C

Per Unit Base =

Rth(j-c) =

0.35°C/W

(IGBT)

Rth(j-c) =

0.63°C/W

(FWDi)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')

GATE RESISTANCE, RG, (Ω)

SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)

102

100101

101

100

102

SWITCHING LOSS VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

Eon

Eoff

GATE RESISTANCE, RG, (Ω)

REVERSE RECOVERY

SWITCHING LOSS, Err, (mJ/PULSE)

102

100101

101

100

102

REVERSE RECOVERY SWITCHING LOSS VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY

SWITCHING LOSS, Err, (mJ/PULSE)

102

101

101102

100

103

REVERSE RECOVERY SWITCHING LOSS VS.

EMITTER CURRENT

(INVERTER PART - TYPICAL)

Err

VCC = 600V

VGE = ±15V

RG = 27Ω

Tj = 150°C

Ls = 50nH

Inductive Load

VCC = 600V

VGE = ±15V

IC = 100A

Tj = 150°C

Ls = 50nH

Inductive Load

VCC = 600V

VGE = ±15V

IC = 100A

Tj = 150°C

Ls = 50nH

Inductive Load

VCC = 600V

VGE = ±15V

RG = 27Ω

Tj = 150°C

Ls = 50nH

Inductive Load

Eon

Eoff

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)

102

101

101102

100

103

SWITCHING LOSS VS.

COLLECTOR CURRENT

(INVERTER PART - TYPICAL)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(BRAKE PART - TYPICAL)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(BRAKE PART - TYPICAL)

COLLECTOR CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, VCE(sat), (VOLTS)

3.5

2.5

3.0

2.0

1.5

0.5

1.0

01005025 75

VGE = 15V

Tj = 25°C

Tj = 125°C

Tj = 150°C

0 1.0 0.5 2.51.5 2.0 3.0

100

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

101

102

EMITTER CURRENT, IE, (AMPERES)

Tj = 25°C

Tj = 125°C

Tj = 150°C