A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 OC
NONE
SYMBOL TEST CONDITIONS MINIM UM TYPICAL MAXIMUM UNITS
VBR IR = 10 µA300 V
CJVR = 50 V f = 1.0 MHz
VR = 40 V 0.2 pF
RSIF = 50 mA f = 100 MHz 0.6 Ohms
TLIF =10 mA IR = 6.0 mA 1000 nS
Trr IF =20 mA IR = 100 mA 100 nS
SILICON PIN DIODE CHIP
AP3000A-00
DESCRIPTION:
The AP3000C-11 is a Passivated
Epitaxial Silicon PIN Diode Housed in
a Hermetically Sealed Glass Pack age.
This Device is Designed to Cover a
Wide Range of Control Applications
Such as RF Switching,Phase Shifting,
Modulation, Duplexing Limiting and
Pulse Forming.
MAXI MUM RATINGS
IF100 mA
VR300 V
PDISS 250 mW @ T A = 25 OC
θ
θθ
θJC 20 OC/W
PACKAGE STYLE 01
