2013-09-191
BFP405
1
2
3
4
Low Noise Silicon Bipolar RF Transistor
• For low current applications
• For oscillators up to 12 GHz
• Minimum noise figure NFmin = 1.25 dB at 1.8 GHz
Outstanding Gms = 23 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP405 ALs 1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage
TA = 25 °C
T
A
= -55 °C
VCEO
4.5
4.1
V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 1.5
Collector current IC25 mA
Base current IB3
Total power dissipation1)
TS ≤ 110 °C
Ptot 75 mW
Junction temperature TJ150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature TSt
g
-65 ... 150
1TS is measured on the emitter lead at the soldering point to the pcb
2013-09-192
BFP405
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 530 K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 4.5 5 - V
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - - 1 µA
DC current gain
IC = 5 mA, VCE = 4 V, pulse measured
hFE 60 95 130 -
1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
2013-09-193
BFP405
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 10 mA, VCE = 3 V, f = 2 GHz
fT18 25 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.05 0.1 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.24 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.29 -
Minimum noise figure
IC = 2 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt
NFmin - 1.25 - dB
Power gain, maximum stable1)
IC = 5 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Gms - 23 - dB
Insertion power gain
VCE = 2 V, IC = 5 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
|S21|214 18.5 -
Third order intercept point at output2)
VCE = 2 V, IC = 5 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
IP3 - 15 - dBm
1dB compression point at output
IC = 5 mA, VCE = 2 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
P-1dB - 5 -
1Gms = |S21 / S12|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
2013-09-194
BFP405
Total power dissipation Ptot = ƒ(TS)
0 30 60 90 °C 150
TS
0
10
20
30
40
50
60
70
mW
90
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance Ccb = ƒ(VCB)
f = 1MHz
0 0.5 1 1.5 2 2.5 3 V4
VCB
0
0.05
0.1
0.15
0.2
pF
0.3
CCB
2013-09-195
BFP405
Transition frequency fT = ƒ(IC)
f = 2 GHz
VCE = parameter in V
0 4 8 12 16 mA 22
IC
4
6
8
10
12
14
16
18
20
22
GHz
26
fT
4V
3V
2V
1.5V
1V
0.5V
Power gain Gma, Gms, |S21|2 = ƒ (f)
VCE = 3 V, IC = 5 mA
012345678GHz 10
f
0
4
8
12
16
20
24
28
32
36
dB
44
G
Gms
Gma
|S21|²
Power gain Gma, Gms = ƒ (IC)
VCE = 3V
f = parameter in GHz
0 4 8 12 16 20 mA 26
IC
0
4
8
12
16
20
24
28
32
dB
40
G
0.15GHz
0.45GHz
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
10GHz
Power gain Gma, Gms = ƒ (VCE)
IC = 5 mA
f = parameter in GHz
01234V6
VCE
0
4
8
12
16
20
24
28
32
dB
40
G
0.15GHz
0.45GHz
0.9GHz
1.5GHz
2.4GHz
3.5GHz
5.5GHz
10GHz
2013-09-196
BFP405
Noise figure F = ƒ(IC)
VCE = 2 V, ZS = ZSopt
02468mA 12
IC
0
0.5
1
1.5
2
2.5
3
dB
4
F
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
Noise figure F = ƒ(IC)
VCE = 2 V, f = 1.8 GHz
02468mA 12
IC
0
0.5
1
1.5
2
2.5
3
dB
4
F
ZS = 50 Ohm
ZS = ZSopt
Noise figure F = ƒ(f)
VCE = 1 V, ZS = ZSopt
01234GHz 6
f
0
0.5
1
1.5
2
dB
3
F
IC = 5 mA
IC = 2 mA
Source impedance for min.
noise figure vs. frequency
VCE = 3 V, IC = 2 mA / 5 mA
100
+j10
-j10
50
+j25
-j25
25
+j50
-j50
10
+j100
-j100
0
0.9GHz
1.8GHz
3GHz
4GHz
5GHz
6GHz
2mA
5mA
2013-09-197
BFP405
SPICE GP Model
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet website
www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design. You find the BFP405 SPICE GP model in the internet
in MWO- and ADS-format, which you can import into these circuit simulation tools
very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the
model circuit correspond to the pin configuration of the device. The model
parameters have been extracted and verified up to 6 GHz using typical devices.
The BFP405 SPICE GP model reflects the typical DC- and RF-performance
within the limitations which are given by the SPICE GP model itself. Besides the DC
characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise)
and intermodulation have been extracted.
2013-09-198
BFP405
Package SOT343
2013-09-199
BFP405
Edition 2009-11-05
Published by Infineon Technologies AG,
85579 Neubiberg, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding cicuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that device
or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be
endangered.
