1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 12, 2014
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRG7PH50K10DPbF TO-247AC Tube 25 IRG7PH50K10DPbF
IRG7PH50K10D-EPbF TO-247AD Tube 25 IRG7PH50K10D-EPbF
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current 90
A
IC @ TC = 100°C Continuous Collector Current 50
ICM Pulse Collector Current, VGE=20V 160
ILM Clamped Inductive Load Current, VGE=20V 160
IF @ TC = 25°C Diode Continous Forward Current 20
IF @ TC = 100°C Diode Continous Forward Current 10
VGE Continuous Gate-to-Emitter Voltage ±30 V
PD @ TC = 25°C Maximum Power Dissipation 400 W
PD @ TC = 100°C Maximum Power Dissipation 160
TJ Operating Junction and -40 to +150
C
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.3
°C/W
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 1.4
VCES = 1200V
IC = 50A, TC =100°C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.9V @ IC = 35A
G C E
Gate Collector Emitter
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features Benefits
Low VCE(ON) and switching losses High efficiency in a Wide Range of Applications
10µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 150°C Increased Reliability
Positive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
IRG7PH50K10DPbF
IRG7PH50K10D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
IRG7PH50K10DPbF
IRG7PH50K10D‐EPbF
E
G
n-channel
C
C
C
G
E
G
C E
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IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 1.4 — V/°C VGE = 0V, IC = 2mA (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage — 1.9 2.4 V IC = 35A, VGE = 15V, TJ = 25°C
— 2.4 — IC = 35A, VGE = 15V, TJ = 150°C
VGE(th) Gate Threshold Voltage 5.0 — 7.5 V VCE = VGE, IC = 1.7mA
VGE(th)/TJ Threshold Voltage Temperature Coeff. — -16 — mV/°C VCE = VGE, IC = 1.7mA (25°C-150°C)
gfe Forward Transconductance — 20 — S VCE = 50V, IC = 35A, PW = 20µs
ICES Collector-to-Emitter Leakage Current — 1.0 35 µA VGE = 0V, VCE = 1200V
— 1200 — VGE = 0V, VCE = 1200V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±30V
VF — 2.5 3.3 V IF = 8A
— 2.4 — V IF = 8A, TJ = 150°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
Qg Total Gate Charge (turn-on) — 200 300
nC
IC = 35A
Qge Gate-to-Emitter Charge (turn-on) — 40 60 VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 90 135 VCC = 600V
Eon Turn-On Switching Loss — 2.6 3.5
mJ IC = 35A, VCC = 600V, VGE=15V
RG = 5, TJ = 25°C
Energy losses include tail & diode
reverse recovery
Eoff Turn-Off Switching Loss 1.6 2.5
Etotal Total Switching Loss 4.26.0
td(on) Turn-On delay time — 90 105
ns
tr Rise time — 60 80
td(off) Turn-Off delay time — 340 390
tf Fall time — 90 110
Eon Turn-On Switching Loss — 3.5 —
mJIC = 35A, VCC = 600V, VGE=15V
RG = 5, TJ = 150°C
Energy losses include tail & diode
reverse recovery
Eoff Turn-Off Switching Loss — 2.8 —
Etotal Total Switching Loss 6.3
td(on) Turn-On delay time — 70 —
ns
tr Rise time — 60 —
td(off) Turn-Off delay time — 350 —
tf Fall time — 250 —
Cies Input Capacitance — 4300 — VGE = 0V
Coes Output Capacitance — 190 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 100 — f = 1.0Mhz
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C, IC = 160A
FULL SQUARE VCC = 960V, Vp ≤ 1200V
VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area 10— — µs TJ = 150°C,VCC = 600V, Vp ≤ 1200V
VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode — 190 — µJ TJ = 150°C
trr Diode Reverse Recovery Time — 130 — ns VCC = 600V, IF = 8A
Irr Peak Reverse Recovery Current — 13 — A VGE = 15V, Rg = 5
Diode Forward Voltage Drop
Notes:
V
CC = 80% (VCES), VGE = 20V
R
is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
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IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
0.1 110 100
f , Frequency ( kHz )
0
10
20
30
40
50
60
70
80
90
Load Current ( A )
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 161W
I
Square Wave:
V
CC
Diode as specified
Fig. 5- Reverse Bias SOA
TJ = 150°C; VGE = 20V
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
1000
IC (A)
1msec
10µsec
100µsec
Tc = 25°C
Tj = 150°C
Single Pulse DC
Fig. 4 - Forward SOA
TC = 25°C, TJ 150°C, VGE =15V
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
10 100 1000 10000
VCE (V)
1
10
100
1000
IC (A)
Fig. 3 - Power Dissipation vs.
Case Temperature
25 50 75 100 125 150
TC (°C)
0
20
40
60
80
100
IC (A)
25 50 75 100 125 150
TC (°C)
0
50
100
150
200
250
300
350
400
450
Ptot (W)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
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IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
0 1 2 3 4 5 6 7 8 9 10
VCE (V)
0
20
40
60
80
100
120
140
160
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
0 1 2 3 4 5 6 7 8 9 10
VCE (V)
0
20
40
60
80
100
120
140
160
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
0 2 4 6 8 10
VCE (V)
0
20
40
60
80
100
120
140
160
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
6 8 10 12 14 16 18 20
VGE (V)
0
2
4
6
8
VCE (V)
ICE = 18A
ICE = 35A
ICE = 70A
0.0 2.0 4.0 6.0 8.0 10.0
VF (V)
0
20
40
60
80
100
120
140
160
IF (A)
TJ =150°C
TJ = 25°C
TJ = -40°C
Fig. 9 - Typ. Diode Forward Characteristics
tp = 20µs
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 20µs
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
6 8 10 12 14 16 18 20
VGE (V)
0
2
4
6
8
VCE (V)
ICE = 18A
ICE = 35A
ICE = 70A
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IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
6 8 10 12 14 16 18 20
VGE (V)
0
2
4
6
8
VCE (V)
ICE = 18A
ICE = 35A
ICE = 70A
468101214
VGE, Gate-to-Emitter Voltage
(V)
0
20
40
60
80
100
120
140
160
IC, Collector-to-Emitter Current
(A)
TJ = 25°C
TJ = 150°C
010 20 30 40 50 60 70
IC (A)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
0 1020304050607080
IC (A)
0
2
4
6
8
10
Energy (mJ)
EOFF
EON
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; VCE = 600V, RG = 5; VGE = 15V
020 40 60 80 100
RG ()
1
10
100
1000
10000
Swiching Time (ns)
tR
tdOFF
tF
tdON
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; VCE = 600V, ICE = 35A; VGE = 15V
0 20 40 60 80 100 120
RG ()
0
2
4
6
8
10
Energy (mJ)
EOFF
EON
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; VCE = 600V, ICE = 35A; VGE = 15V
Fig. 12 - Typical VCE vs. VGE
TJ = 150°C
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 150°C; VCE = 600V, RG = 5; VGE = 15V
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IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
10 11 12 13 14 15 16
VGE (V)
5
10
15
20
25
30
35
Time (µs)
40
80
120
160
200
240
280
Current (A)
Tsc
Isc
Fig. 23 - VCE vs. Short Circuit Time
Vcc= 600V; TC= 150°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; TJ = 150°C
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 150°C
46810 12 14 16
IF (A)
2
6
10
14
18
IRR (A)
RG =
RG = 47
RG = 10
RG = 100
0100 200 300 400 500
diF /dt (A/µs)
5
7
9
11
13
15
IRR (A)
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 150°C
020 40 60 80 100 120
RG ()
2
4
6
8
10
12
14
IRR (A)
Fig. 19 - Typ. Diode IRR vs. RG
0 100 200 300 400 500
diF /dt (A/µs)
200
400
600
800
1000
1200
1400
1600
1800
QRR (nC)
4A
16A
8A
2 4 6 8 10 12 14 16 18
IF (A)
0
50
100
150
200
250
300
350
Energy (µJ)
RG =10
RG =
RG = 47
RG = 100
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 8A; TJ = 150°C
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IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
0100 200 300 400 500 600
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
Fig. 24 - Typ. Capacitance vs. VCE
0 40 80 120 160 200 240
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES = 600V
VCES = 400V
Fig. 25 - Typical Gate Charge vs. VGE
ICE = 35A
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig. 27 Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
Ri(°C/W) i(sec)
0.0108 0.00001
0.5322 0.00041
0.5460 0.00340
0.3107 0.02493
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig. 26 Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
Ri(°C/W) i(sec)
0.0149 0.00005
0.0670 0.00017
0.1384 0.00422
0.0908 0.02614
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IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit
0
1K
VCC
DUT
L
L
Rg
80 V
DUT VCC
+
-
DC
4X
DUT
VCC
R
SH
L
Rg
VCC
DUT /
DRIVER
diode clamp /
DUT
-5V
Rg
VCC
DUT
R = VCC
ICM
G force
C sense
100K
DUT
0.0075µF
D1 22K
E force
C force
E sense
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IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
-10
0
10
20
30
40
50
60
70
80
-100
0
100
200
300
400
500
600
700
800
-0.4 -0.2 0 0.2 0.4 0.6 0.8
I
CE
(A)
V
CE
(V)
time(µs)
90% ICE
10% VCE 10% ICE
Eoff Loss
tf
-10
0
10
20
30
40
50
60
70
80
-100
0
100
200
300
400
500
600
700
800
-0.4 -0.2 0 0.2 0.4 0.6 0.8
I
CE
(A)
V
CE
(V)
time (µs)
TEST
CURRENT
90% I
CE
10% VCE
10% I
CE
tr
Eon Loss
-50
0
50
100
150
200
250
300
350
-100
0
100
200
300
400
500
600
700
-10-5 0 5 101520
Ice (A)
Vce (V)
Time (uS)
VCE
ICE
-30
-15
0
15
30
45
-0.20 0.00 0.20 0.40 0.60 0.80
I
F
(A)
time (µS)
Peak
I
RR
t
RR
Q
RR
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IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
YEAR 1 = 2001
DATE CODE
PART NUMBER
INTERNATIONAL
LOGO
RECTIFIER
ASSEMBLY
56 57
IRFPE30
135H
LINE H
indicates "Lead-Free" WEEK 35
LOT CODE
IN THE ASSEMBLY LINE "H"
ASSEMBLED ON WW 35, 2001
Notes: This part marking information applies to devices produced after 02/26/2001
Note: "P" in assembly line position
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFPE30
LOT CODE 5657
TO-247AC Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AC package is not recommended for Surface Mount Application.
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 12, 2014
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AD package is not recommended for Surface Mount Application.
ASSEM BLY YEAR 0 = 2000
ASSEM BLED O N WW 35, 2000
IN THE ASSEM BLY LINE "H"
EXAM PLE: THIS IS AN IRGP30B120KD-E
LOT CO DE 5657
WITH ASSEM BLY PART NUM BER
DATE CODE
IN T E R N A T IO N A L
RECTIFIER
LO G O
035H
5 6 5 7
WEEK 35
LIN E H
LO T CO D E
Note: "P" in assem bly line position
indicates "Lead-Free"
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IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
Qualification Information†
Qualification Level Industrial
(per JEDEC JESD47F) ††
Moisture Sensitivity Level TO-247AC
TO-247AD
RoHS Compliant Yes
N/A
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
o contact International Rectifier, please visit http://www.irf.com/whoto-call/
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date Comments
3/12/14 Updated Package outline on page10
