May 2009
FDS4141_F085 P-Channel PowerTrench® MOSFET
©2009 Fairchild Semiconductor Corporation
FDS4141_F085 Rev. A www.fairchildsemi.com1
FDS4141_F085
P-Channel PowerTrench® MOSFET
-40V, -10.8A, 19.0mΩ
Features
Typ rDS(on) = 10.5mΩ at VGS = -10V, ID = -10.5A
Typ rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -8.4A
Typ Qg(TOT) = 35nC at VGS = -10V
High performance trench technology for extremely low
rDS(on)
RoHS Compliant
Qualified to AEC Q101
SO-8
D
D
D
D
S
SS
G
Pin 1
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
Applications
Control switch in synchronous & non-synchronous buck
Load switch
Inverter
FDS4141_F085 P-Channel PowerTrench® MOSFET
FDS4141_F085 Rev. A www.fairchildsemi.com2
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter Ratings Units
VDSS Drain to Source Voltage -40 V
VGS Gate to Source Voltage ±20 V
IDDrain Current Continuous (VGS = 10V) -10.8 A
Pulsed -36
EAS Single Pulse Avalanche Energy 229 mJ
PDPower Dissipation 1.6 W
TJ, TSTG Operating and Storage Temperature -55 to +150 oC
RθJC Thermal Resistance Junction to Case 30 oC/W
RθJA Thermal Resistance Junction to Ambient SO-8, 1in2 copper pad area 81 oC/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS4141 FDS4141_F085 SO-8 13” 12mm 2500 units
Electrical Characteristics TA = 25°C unless otherwise noted
Off Characte ristics
On Characteristics
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -40 - - V
IDSS Zero Gate Voltage Drain Current VDS = -32V, - - -1 µA
IGSS Gate to Source Leakage Current VGS = ±20V, - - ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1.0 -1.7 -3.0 V
rDS(on) Drain to Source On Resistance
ID = -10.5A, VGS = -10V - 10.5 13.0
mΩ
ID = -8.4A, VGS = -4.5V - 14.8 19.0
ID = -10.5A, VGS = -10V,
TJ = 125oC- 15.3 19.0
gFS Forward Transconductance ID = -10.5A, VDD = -5V 34 S
Ciss Input Capacitance VDS = -20V, VGS = 0V,
f = 1MHz
- 2005 - pF
Coss Output Capacitance - 355 - pF
Crss Reverse Transfer Capacitance - 190 - pF
RgGate Resistance f = 1MHz - 5.0 - Ω
Qg(TOT) Total Gate Charge at -10V VGS = 0 to -10V VDD = -20V
ID = -10.5A
-3545nC
Qg(-5) Total Gate Charge at -5V VGS = 0 to -5V - 18.6 24.2 nC
Qgs Gate to Source Gate Charge - 5.2 - nC
Qgd Gate to Drain “Miller“ Charge - 6.6 - nC
FDS4141_F085 P-Channel PowerTrench® MOSFET
FDS4141_F085 Rev. A www.fairchildsemi.com3
Electrical Characteristics TA = 25oC unless otherwise noted
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Star ting TJ = 25oC, L = 6.2mH, IAS = -8.6A
Symbol Parameter Test Conditions Min Typ Max Units
ton Turn-On Time
VDD = -20V, ID = -10.5A
VGS = -10V, RGEN = 6Ω
- - 25 ns
td(on) Turn-On Delay Time - 9.7 - ns
trRise Time - 4.4 - ns
td(off) Turn-Off Delay Time - 41 - ns
tfFall Time - 11.6 - ns
toff Turn-Off Time - - 84 ns
VSD Source to Drain Diode Voltage ISD = -10.5A - -0.8 -1.3 V
ISD = -2.1A - -0.7 -1.2
trr Reverse Reco very Time IF = -10.5A, dSD/dt = 100A/µs-2634ns
Qrr Reverse Recovery Charge - 13.4 17.4 nC
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www. aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDS4141_F085 P-Channel PowerTrench® MOSFET
FDS4141_F085 Rev. A www.fairchildsemi.com4
Typical Characteristics
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
POWER DISSIPATION MULTIPLIER
TA, CASE TEMPERA TURE
(
oC
)
Figure 2. Maximum Conti nuous Drain Current vs
Ambient Temperature
25 50 75 100 125 150
0
3
6
9
V
GS
=
-
10V
V
GS
=
-
4.5V
R
θ
JA
= 81
o
C/W
-I
D
, DRAIN CURREN T (A)
T
A
, CAS E TEMPERATURE
(
o
C
)
Figure 3.
10
-3
10
-2
10
-1
11010
2
10
3
0.001
0.01
0.1
1
R
θ
JA
= 81
o
C/W
SINGLE PULSE
D = 0.50
0.2 0
0.1 0
0.0 5
0.0 2
0.0 1
NORMALIZED THERMAL
IMPE DANCE, Z
θ
JA
t
,
RECTA NGULAR PULSE DURATION
(
s
)
DUTY CYCLE - DESCENDING ORDER
2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + T A
PDM
t1t2
Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
10-3 10-2 10-1 11010
2103
1
10
100
1000
RθJA = 81
o
C/W
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
=
-
10V
SINGLE PULSE
-I
DM
, PEAK CURRENT (A)
t, RECTA N GULAR PULSE DURATION(s)
T
A
= 25
o
C
I = I
2
5
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
FDS4141_F085 P-Channel PowerTrench® MOSFET
FDS4141_F085 Rev. A www.fairchildsemi.com5
Figure 5.
0.01 0.1 1 10 100 300
0.01
0.1
1
10
100
1s
100ms
1ms
10ms
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRA IN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA M A Y BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ
= MA X RATED
TA
= 25oC
DC
Forward Bias Safe Operating Area
0.01 0.1 1 10 100
1
10
60
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
-I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7.
01234
0
9
18
27
36
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MA X
V
DD
= -5V
-I
D
, DRAIN CURRENT (A)
-V
GS
, GATE T O SOURCE V O LTA G E (V )
Transfer Characteristics Figure 8.
0123
0
9
18
27
36
VGS =
-
3.5V
VGS =
-
3V
VGS =
-
4V
VGS =
-
10V
VGS =
-
4.5V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MA X
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRA IN TO SOURCE VOLTAGE (V)
Saturation Characteristics
Figure 9.
246810
0
10
20
30
40
50
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MA X
I
D
=
-
10.5A
r
DS(on)
, DRAIN TO SO UR CE
ON-RESISTANCE
(
mΩ
)
-VGS, GATE TO S O U R C E V O L T AGE (V)
Drain to Source On-Resistance
Variation vs Gate to Source Voltage Figure 10. Normalized Drain to Source On
Resistance vs Junctio n Te mperature
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MA X
I
D
=
-
10.5A
V
GS
=
-
10V
NORMALIZED
DRAIN TO SO U RCE ON-RESISTANCE
T
J
, JUN CTION T EMPERATURE
(
o
C
)
Typical Characteristics
FDS4141_F085 P-Channel PowerTrench® MOSFET
FDS4141_F085 Rev. A www.fairchildsemi.com6
Figure 11.
-75 -50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
NORMALIZED GATE
THRESHOLD VOLTAGE
T
J
, JUNCTION TEMPERATURE
(
o
C
)
V
GS
=
V
DS
I
D
=
-
250
µ
A
Normalized Gate Threshold Voltage vs
Junction Temper a t ure Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Tem pe rature
-80 -40 0 40 80 120 160
0.90
0.95
1.00
1.05
1.10
T
J
, JUNCTION TEMPERATURE
(
o
C
)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= -
1mA
Figure 13.
0.1 1 10 60
100
1000
4000
f = 1 M Hz
V
GS
= 0V C
rss
C
oss
C
iss
CAPACITANCE (pF)
-V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
Capacitance vs Drain to Sour ce
Voltage Figure 14. Gate Charge vs Gate to Source Voltage
0 5 10 15 20 25 30 35 40
0
2
4
6
8
10
I
D
= -10.5A
V
DD
= -25VV
DD
= -15V
V
DD
= -20V
Q
g
, GATE CHARGE (nC)
-
V
GS
, GATE TO SOURCE VOLTAGE (V)
Typical Characteristics
FDS4141_F085 Rev. A www.fairchildsemi.com7
FDS4141_F085 P-Channel PowerTrench® MOSFET
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intended to be an exhaustive list of all such trademarks.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™*
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™®*
The Power Franchise®
®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
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make changes at any time without notice to impr ove the design.
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Rev. I40
