MCH6608
No.7040-1/5
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•1.5V drive.
•Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID0.65 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 2.6 A
Allowable Power Dissipation PD
Mounted on a ceramic board (900mm
2
✕0.8mm) 1unit
0.8 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 µA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V
Forward T ransfer Admittance yfsVDS=10V, ID=150mA 400 560 mS
RDS(on)1 ID=150mA, VGS=4V 0.9 1.2 Ω
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=80mA, VGS=2.5V 1.2 1.7 Ω
RDS(on)3 ID=10mA, VGS=1.5V 2.6 5.2 Ω
Input Capacitance Ciss VDS=10V, f=1MHz 30 pF
Output Capacitance Coss VDS=10V, f=1MHz 15 pF
Reverse T ransfer Capacitance Crss VDS=10V, f=1MHz 10 pF
Marking : FH Continued on next page.
Ordering number : EN7040A
70306 / 42806PE MS IM TB-00002283 / 82201 TS IM TA-2463
MCH6608 N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
MCH6608
No.7040-2/5
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Turn-ON Delay Time td(on) See specified Test Circuit. 32 ns
Rise T ime trSee specified Test Circuit. 110 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 250 ns
Fall T ime tfSee specified Test Circuit. 160 ns
Total Gate Charge Qg VDS=10V, VGS=10V, ID=300mA 2.34 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=300mA 0.38 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=300mA 0.45 nC
Diode Forward Voltage VSD IS=300mA, VGS=0V 0.8 1.2 V
Package Dimensions Electrical Connection
unit : mm
7022A-006
Switching Time Test Circuit
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
2.0
0.25
1.6
2.1
0.25
0.85
0.3
0.65
0.15
0 to 0.02
0.07
654
123
654
123
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=150mA
RL=100Ω
VDD=15V
VOUT
MCH6608
VIN
4V
0V
VIN
65 4
132
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top View
MCH6608
No.7040-3/5
0.01
0.1 0.1
23 57 23 57
1.0
7
5
3
2
7
5
3
2
10
1.0
VDS=10V
yfs -- ID
--60
0--40
0.5
--20
1.0
0
1.5
20
2.0
40
2.5
60
3.0
80 100 120 160140
RDS(on) -- Ta
ID=80mA, VGS=2.5V
ID=150mA, VGS=4.0V
75°C
Ta= --25°C
IT00230 IT00231
0.01
0.1 0.1
23 57 23 57
10
1.0
7
5
3
2
7
5
3
2
1.0
RDS(on) -- IDVGS=2.5V
1.0
10
7
5
3
2
0.001 0.01
23 57 23
R
DS(on) -- IDVGS=1.5V
Ta=75°C
25°C--25°CTa=75°C
--25°C
IT00228 IT00229
25°C
25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Ambient Temperature, Ta -- °CDrain Current, ID -- A
Forward T ransfer Admittance, yfs -- S
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Drain Current, ID -- A
0
01
0.5
2
1.0
3
1.5
4
2.0
5
2.5
6
3.0
78910
R
DS(on) -- VGS Ta=25°C
0.01
0.1
1.0
0.1
23 57 23 57
10
7
5
3
2
7
5
3
2
1.0
RDS(on) -- IDVGS=4V
Ta=75°C
--25°C
IT00226 IT00227
25°C
ID=80mA
150mA
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Gate-to-Source Voltage, VGS -- V Drain Current, ID -- A
0
00.1
0.05
0.2
0.15
0.10
0.3
0.20
0.4
0.25
0.30
0.5 0.6 0.7 0.8 0.9 1.0
ID -- VDS
VGS=1.5V
2.0V
2.5V
6.0V
4.0V
3.5V
3.0V
0
00.5 1.0 1.5 2.0
0.3
0.2
0.1
0.6
0.5
0.4
2.5
ID -- VGS
75°C
25°C
Ta= --25°C
IT00224 IT00225
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
VDS=10V
MCH6608
No.7040-4/5
A S O
0.01
1.0
2
3
5
5
7
2
3
5
7
0.1
2
3
1.0 10
23 57 23 57
0.1 23 5
IT03638
IDP=2.6A
ID=0.65A
100ms
DC operation
Operation in this
area is limited by RDS(on).
1ms
10ms
0
020 40 60
0.2
0.4
0.8
80 100 120
0.6
1.0
140 160
PD -- Ta
IT03637
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Mounted on a ceramic board(900mm
2
✕0.8mm)1unit
Ta=25°C
Single pulse
Mounted on a ceramic board(900mm
2
✕0.8mm)1unit
0
0
1
2
0.5
3
4
5
6
7
1.0
8
9
1.5
10
2.0 2.5
VGS -- Qg
VDS=10V
ID=300mA
0
1.0 5
10
7
5
3
2
7
5
3
2
10 15
100
20 3025
Ciss, Coss, Crss -- VDS f=1MHz
Crss
Coss
Ciss
IT00234 IT00235
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
PW≤10µs
10
1000
100
7
5
3
2
7
5
3
2
0.01 0.1 23 523 57
SW Time -- IDVDD=15V
VGS=4V
0
0.01 0.6 0.8 1.0 1.20.2 0.4
0.1
1.0
7
5
3
2
7
5
3
2
1.4
VGS=0V
IS -- VSD
Ta=75°C
25°C
--25°C
td(on)
td(off)
tr
tf
IT00232 IT00233
Drain Current, ID -- A
Switching Time, SW Time -- ns
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
MCH6608
No.7040-5/5PS
Note on usage : Since the MCH6608 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of April, 2006. Specifications and information herein are subject
to change without notice.
