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GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
MDS400
400 Watts Pk, 45 Volts, 32µs, 2%
Avionics 1030-1090 MHz
GENERAL DESCRIPTION
The MDS400 is a COMMON BASE transistor capable of providing 400 Watts
Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor
includes double input prematching for full broadband capability. Gold
Metalization and Diffused Ballasting are used to provide high reliability and
supreme ruggedness.
CASE OUTLINE
55KT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 1450 Watts
o
Maximum Voltage and Current
BVces Collector to Emiter Voltage 55 Volts
BVebo Collector to Base Voltage 4.0 Volts
Ic Collector Current 40 Amps
Ma ximum Temperatures
Stor age Temperature -40 to + 200
(
C
Operating Junction Temperature + 200
(
C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST
CONDITIONS MIN TYP MAX UNITS
Po
Pin
Pg
h
VSWR1
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F =1030/1090 MHz
Vcc=45Volts
Pulse Width = 32
)
s
Duty Factor = 2 %
At Rated Power
400
6.5 35
90
10:1
Watts
Watts
dB
%
BVces
BVebo
H
fe
Rθjc
Collector to Emitter Breakdo wn
Emitter to Base Breakdown
Current Gain
Thermal Resistance
Ic = 50 mA
Ie = 30 mA
Vce = 5 V, Ic = 1 A
Tc = 25 C
o
55
3.5
10 0.12
Volts
Volts
C/W
o
Issue September 22, 1995
