MSD130
MSD130-Rev 1 www.microsemi.com
Dec, 2009 1/3
Module Type
TYPE VRRM VRSM
MSD130 – 08
MSD130 – 12
MSD130 – 16
MSD130 – 18
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ra tings
Symbol Conditions Values Units
ID Tc=100℃ 130 A
IFSM t=10mS Tvj =45℃ 1200 A
i2t t=10mS Tv
j
=45℃7200 A2s
Visol a.c.50Hz;r.m.s.;1min 3000 V
Tvj -40 to 150 ℃
Tstg -40 to 125 ℃
Mt To terminals(M6) 5±15% Nm
Ms To heatsink(M6) 5±15% Nm
Weight Module 230 g
Thermal Charac teristics
Symbol Conditions Values Units
Rth(j-c) Per diode 0.9 ℃
/
W
Rth(c-s) Module 0.03 ℃
/
W
Electrical Characteristics
Circuit
Glass Passivated Three
Phase Rectifier Bridge
VRRM 800 to 1800V
ID 130 Amp
Features
y Three phase bridge rectifier
y Blocking voltage: 800 to 1800V
y Heat transfer through aluminum oxide DCB
ceramic isolated metal baseplate
y Glass passivated chip
Applications
y Three phase rectifiers for power supplies
y Rectifiers for DC motor field supplies
y Battery charger rectifiers
y Input rectifiers for variable frequency drives
-
+
~
~
~
MSD
Symbol Conditions Values Units
VFM T=25℃ IFM =300A 1.8 V
IRD Tvj =25℃ VRD=VRRM
Tvj =150℃ VRD=VRRM
≤0.3
≤5
mA
mA
MSD130
MSD130-Rev 1 www.microsemi.com
Dec, 2009 2/3
Performance Curves
0 ID 20
40 60 80 100 120 140 A
Fig1. Forward Characteristics
Fig3. Transient thermal impedance
Fi
g
2. Power dissi
p
ation
Fig4. Max Non-Repetitive Forward Surge
Current
0 Tc 50 100 150 °C
IF
400
A
300
200
100
0
0 VF 0.5 1.0 1.5 2.0 V
300
W
200
100
Pvtot
0
0.001 0.01 0.1 1 10 100 S
1 10 cycles 100
Zth(j-C)
Typ.
25℃
125℃
0.5
0
1.0
℃/ W
1500
1000
500
0
2000
A
200
A
160
120
0
80
40
ID
50Hz
MSD130
MSD130-Rev 1 www.microsemi.com
Dec, 2009 3/3
Package Outline Information
CASE-M3
Fig5.Forward Current Derating Curve
Dimensions in mm
