Rev.1.00 Feb 14, 2007 page 1 of 7
BCR16PM-12LG
Triac
Medium Power Use
REJ03G1511-0100
Rev.1.00
Feb 14, 2007
Features
• IT (RMS) : 16 A
• VDRM : 600 V
• IFGTI, IRGTI, IRGT III : 30 mA
• Viso : 2000V
• The Product guarant eed m a ximum junction
temperature 150°C
• Insulated Type
• Planar Type
• UL Recognized : Yellow Card No. E223904
File No.E80271
Outline
RENESAS Package code:
PRSS0003AA-A
(Package name:
TO-220F )
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
2
1
3
2
1
3
Applications
AC no junction Switching, light dimmer, electronic blanket, Control of household electrical appliance such as electric
fans, solenoid driver, small motor control, and other general purpose control applications
Voltage class
Parameter Symbol 12 Unit
Repetitive peak off-state voltageNote1 V
DRM 600 V
Non-repetitive peak off-state voltageNote1 V
DSM 720 V
BCR16PM-12LG
Rev.1.00 Feb 14, 2007 page 2 of 7
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 16 A Commercial frequency, sine full wave
360°conduction, Tc = 87°C
Surge on-state current ITSM 160 A 60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusion I2t 106.5 A2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 5 W
Average gate power dissipation PG (AV) 0.5 W
Peak gate voltage VGM 10 V
Peak gate current IGM 2 A
Junction Temperature Tj –40 to +150 °C
Storage temperature Tstg –40 to +150 °C
Mass — 2.0 g Typical value
Isolation voltage Viso 2000 V Ta = 25°C, AC 1 minute,
T1 • T2 • G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 150°C, VDRM applied
On-state voltage VTM — — 1.5 V
Tc = 25°C, ITM = 25 A,
instantaneous measurement
Ι V
FGTΙ — — 1.5 V
ΙΙ V
RGTΙ — — 1.5 V
Gate trigger voltageNote2
ΙΙΙ V
RGTΙΙΙ — — 1.5 V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι I
FGTΙ — — 30 mA
ΙΙ I
RGTΙ — — 30 mA
Gate trigger curentNote2
ΙΙΙ I
RGTΙΙΙ — — 30 mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate non-trigger voltage VGD 0.2/0.1 — — V Tj = 125°C/150°C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) — — 3.5 °C/W Junction to caseNote3
Critical-rate of rise of off-state
commutation voltageNote4 (dv/dt)c 10/1 — — V/µs Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (j-c) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is sho wn in the table below.
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –8.0 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR16PM-12LG
Rev.1.00 Feb 14, 2007 page 3 of 7
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
×
100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
× 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
10
0
2510
1
80
40
37
10
2
4
25374
120
160
200
60
20
100
140
180
0
0.5 1.0 3.01.5 2.0 2.5 3.5 4.0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
j
= 150°C
T
j
= 25°C
10
0
2310
1
5710
2
23 5710
3
23 5710
4
3
2
10
1
7
5
3
2
7
5
7
5
3
2
10
–1
V
GD
= 0.1V
P
GM
= 5W
P
G(AV)
= 0.5WV
GM
= 10V
V
GT
= 1.5V
I
GM
= 2A
I
FGT I,
I
RGT I,
I
RGT III
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140 160
4
4
–40 0 40 80 120
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140 160
4
4
–40 0 40 80 120
I
FGT I,
I
RGT I
I
RGT III
Typical Example
Typical Example
0.0
0.5
1.0
1.5
3.0
3.5
2.5
4.0
10
–1
10
0
10
1
10
2
10
2
10
3
10
4
2.0
BCR16PM-12LG
Rev.1.00 Feb 14, 2007 page 4 of 7
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Conduction Time (Cycles at 60Hz)
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Ambient Temperature (°C)
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
3
10
–1
10
3
10
4
10
2
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
123 57 23 57
10
2
10
5
23 57 23 57
40
30
15
10
5
35
25
20
0200 24 86 1012141618
No Fins
360° Conduction
Resistive,
inductive loads
14016040–40–60 –20 0 20 60 80 100 120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
5
3
2
10
2
160
120
100
60
20
04.02.00 1.0 1.5 2.5 3.0 3.5
40
80
140
0.5
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Typical Example
40
12108
160
120
100
60
20
0200
80
140
246 141618
Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
40
12108
160
120
100
60
20
0200
80
140
246141618
60 60 t2.3
120 120 t2.3
100 100 t2.3
All fins are black painted
aluminum and greased
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
BCR16PM-12LG
Rev.1.00 Feb 14, 2007 page 5 of 7
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C
)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C) × 100 (%)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140 160
4
4
–40 0 40 80 120
10
1
160–40 0 40 80 120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
Distribution T2+, G–
Typical Example
T2+, G+
T2–, G–Typical Example
Typical Example
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160 10
2
35710
1
23235710
2
7
5
10
1
7
3
2
7
5
10
0
3
2
160
100
80
40
20
0
14040–40–60 160–20 0 20 60 80
140
100120
60
120
Typical Example
Typical Example
Tj = 150°C
III Quadrant
I Quadrant
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
I Quadrant
III Quadrant
Minimum
Characteristics
Value
Typical Example
Tj = 125°C
I
T
= 4A
τ = 500µs
V
D
= 200V
f = 3Hz
BCR16PM-12LG
Rev.1.00 Feb 14, 2007 page 6 of 7
C
1
= 0.1 to 0.47µF
R
1
= 47 to 100Ω
C
0
= 0.1µF
R
0
= 100Ω
Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Tria
c
Test Procedure I
Test Procedure III
Test Procedure II
Commutation Characteristics (Tj=150°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
Gate Current Pulse Width (µs)
Gate Trigger Current vs.
Gate Current Pulse Width
C
1
C
0
R
0
R
1
6Ω6Ω
6Ω
6V 6V
6V
330Ω330Ω
330Ω
A
V
A
V
A
V
Load
10
1
7
5
3
2
10
0
2510
1
10
2
10
3
7
5
3
2
37 10
2
4
4
425374
IRGT III
IRGT I
IFGT I
10
2
35710
1
23235710
2
7
5
10
1
7
3
2
7
5
10
0
3
2
Typical Example
Typical Example
Tj = 150°C
I
T
= 4A
τ = 500µs
V
D
= 200V
f = 3Hz
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
I Quadrant
III Quadrant
Minimum
Characteristics
Value
BCR16PM-12LG
Rev.1.00 Feb 14, 2007 page 7 of 7
Package Dimensions
SC-67 2.0g
MASS[Typ.]
PRSS0003AA-A
RENESAS CodeJEITA Package Code Previous Code
Unit: mm
10.5Max
1.3Max
φ3.2 ± 0.2
0.8
2.54 0.5 2.62.54
5.2 2.8
13.5Min 17
5.0
8.5
1.2
3.6
4.5
Package Name
TO-220F
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Vinyl sack 100 Type name BCR16PM-12LG
Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code BCR16PM-12 LG-A8
Note : Please confirm the specification ab out the shipping in detai l.
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Colophon .7.0
