AON6908A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary The AON6908A is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6 package. The Q1 "High Side" MOSFET is desgined to minimze switching losses. The Q2 "Low Side" MOSFET is an SRFETTM that features low RDS(ON) to reduce conduction losses as well as an integrated Schottky diode with low QRR and Vf to reduce switching losses. The AON6908A is well suited for use in compact DC/DC converter applications. Q1 30V Q2 30V ID (at VGS=10V) 46A 80A RDS(ON) (at VGS=10V) <8.9m <3.6m RDS(ON) (at VGS = 4.5V) <12.5m <4.5m VDS 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View PIN1 Bottom View Bottom View Top View Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Max Q1 VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25C Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current Max Q2 Units V 20 12 V 46 80 28 62 100 200 ID TC=100C C IDM TA=25C IDSM TA=70C 30 11.5 17 9 13.5 A A Avalanche Current C IAS, IAR 27 40 A Avalanche Energy L=0.1mH C EAS, EAR 36 80 mJ VDS Spike VSPIKE V 100ns TC=25C Power Dissipation B TC=100C Power Dissipation A TA=70C PDSM Junction and Storage Temperature Range Rev0 : Sep 2010 36 78 12 31 1.9 2.1 1.2 1.3 PD TA=25C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 36 31 TJ, TSTG Symbol t 10s Steady-State Steady-State RJA RJC -55 to 150 Typ Q1 29 56 3.3 www.aosmd.com Typ Q2 24 50 1.2 Max Q1 Max Q2 35 29 67 60 4 1.6 W W C Units C/W C/W C/W Page 1 of 11 AON6908A Q1 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V Max 30 1 TJ=55C 5 IGSS Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage VDS=VGS ID=250A 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 100 Units V VDS=30V, VGS=0V VGS(th) A 100 nA 1.8 2.4 V 7.4 8.9 11.1 13.4 VGS=4.5V, ID=11.5A 10 12.5 VGS=10V, ID=11.5A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125C A gFS Forward Transconductance VDS=5V, ID=11.5A 50 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss m m S 1 V 34 A 680 850 1110 pF VGS=0V, VDS=15V, f=1MHz 260 380 540 pF 18 30 51 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 10 12.5 15 nC Qg(4.5V) Total Gate Charge 4.6 5.7 6.9 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=10V, VDS=15V, ID=11.5A Qgs Gate Source Charge Qgd Gate Drain Charge 1.6 2 2.4 nC 1.5 2.6 3.6 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=11.5A, dI/dt=500A/s 8 10.5 13 Qrr Body Diode Reverse Recovery Charge IF=11.5A, dI/dt=500A/s 13 17.2 21 5 VGS=10V, VDS=15V, RL=0.75, RGEN=3 ns 9.5 ns 18.5 ns 4 ns ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on RJA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Sep 2010 www.aosmd.com Page 2 of 11 AON6908A Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 10V 6V 5V VDS=5V 4.5V 80 7V 60 4V ID(A) ID (A) 60 3.5V 40 40 125C 20 VGS=3V 20 25C 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 14 Normalized On-Resistance 1.8 12 VGS=4.5V RDS(ON) (m ) 0.5 10 8 6 VGS=10V VGS=10V ID=11.5A 1.6 1.4 17 VGS=4.5V 5 ID=11.5A 2 1.2 10 1 4 0 5 10 15 20 25 0.8 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 75 100 125 150 175 0 Temperature (C) 18 Figure 4: On-Resistance vs. Junction Temperature (Note E) 25 1.0E+02 ID=11.5A 1.0E+01 40 20 1.0E+00 125C 1.0E-01 IS (A) RDS(ON) (m ) 25 15 125C 25C 1.0E-02 1.0E-03 10 1.0E-04 25C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : Sep 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 11 AON6908A Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1400 VDS=15V ID=11.5A 1200 Ciss Capacitance (pF) VGS (Volts) 8 6 4 1000 800 600 Coss 400 2 200 0 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 14 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 160 100.0 10.0 100us 1ms 1.0 DC 120 TJ(Max)=150C TC=25C 0.1 0.1 1 VDS (Volts) 80 40 0.0 0.01 TJ(Max)=150C TC=25C 10s RDS(ON) limited Power (W) ID (Amps) Crss 10 0 0.0001 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=4C/W 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : Sep 2010 www.aosmd.com Page 4 of 11 AON6908A Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS IAR (A) Peak Avalanche Current 100.0 35 Power Dissipation (W) 30 TA=100C TA=25C TA=125C TA=150C 25 20 15 10 5 0 10.0 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 125 TCASE (C) Figure 13: Power De-rating (Note F) 150 10000 50 TA=25C 40 1000 Power (W) Current rating ID(A) 25 30 20 17 5 2 10 100 10 10 0 1 0 25 50 75 100 125 0.00001 150 TCASE (C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Z JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 40 RJA=67C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : Sep 2010 www.aosmd.com Page 5 of 11 AON6908A Q2 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V TJ=55C 100 Gate-Body leakage current VDS=0V, VGS= 12V Gate Threshold Voltage VDS=VGS ID=250A 1 ID(ON) On state drain current VGS=10V, VDS=5V 200 100 nA 2 V 2.9 3.6 4.3 5.2 VGS=4.5V, ID=20A 3.3 4.5 m 0.7 V 80 A Static Drain-Source On-Resistance TJ=125C A gFS Forward Transconductance VDS=5V, ID=20A 115 VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge mA 1.5 VGS=10V, ID=20A Output Capacitance Units V 0.5 IGSS Coss Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ m S 3500 4380 5260 pF 340 490 640 pF 160 280 400 pF 0.3 0.7 1.1 31 38 24 VGS=10V, VDS=15V, ID=20A nC 11 nC Qgd Gate Drain Charge 9 nC tD(on) Turn-On DelayTime 10 ns 6 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/s 9 12 15 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 17 22 27 VGS=10V, VDS=15V, RL=0.75, RGEN=3 50 ns 7 ns ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse ratin g. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Sep 2010 www.aosmd.com Page 6 of 11 AON6908A Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 100 10V 4.5V VDS=5V 3V 120 80 7V 60 ID (A) ID(A) 90 125C 40 60 20 30 25C VGS=2.5V 0 0 0 1 2 3 4 1 5 5 Normalized On-Resistance VGS=4.5V RDS(ON) (m ) 2 2.5 3 2 4 3 VGS=10V 2 1 0 1.8 VGS=4.5V ID=20A 1.6 17 5 2 10 1.4 VGS=10V ID=20A 1.2 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 0 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 10 1.0E+02 ID=20A 1.0E+01 8 125C 1.0E+0040 6 125C IS (A) RDS(ON) (m ) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 1.0E-01 25C 1.0E-02 1.0E-03 2 25C 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : Sep 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 11 AON6908A Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=15V ID=20A 5000 Capacitance (pF) VGS (Volts) 8 6 4 2 4000 3000 2000 Coss 1000 0 Crss 0 0 20 40 60 Qg (nC) Figure 7: Gate-Charge Characteristics 80 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 10s RDS(ON) limited 160 10.0 100s DC 1ms 10ms 1.0 TJ(Max)=150C TC=25C 0.1 0.1 120 80 17 5 2 10 40 0.0 0.01 TJ(Max)=150C TC=25C 10s Power (W) 100.0 ID (Amps) Ciss 1 VDS (Volts) 10 100 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJC=1.6C/W 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : Sep 2010 www.aosmd.com Page 8 of 11 AON6908A Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=25C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100C 100 TA=150C 10 TA=125C 80 60 40 20 1 0 1 10 100 1000 Time in avalanche, tA ( s) Figure 12: Single Pulse Avalanche capability (Note C) 0 100 10000 80 1000 25 50 75 100 125 TCASE (C) Figure 13: Power De-rating (Note F) 150 Power (W) Current rating ID(A) TA=25C 60 40 17 5 2 10 100 10 20 1 0.00001 0.001 0.1 10 1000 0 0 25 50 75 100 125 TCASE (C) Figure 14: Current De-rating (Note F) 0 150 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Z JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 40 RJA=60C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : Sep 2010 www.aosmd.com Page 9 of 11 AON6908A Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 0.7 20A 10A 5A 0.6 1.0E-02 0.5 IR (A) VSD (V) VDS=30V 1.0E-03 0.4 0.3 IS=1A VDS=15V 0.2 1.0E-04 0.1 0 1.0E-05 100 150 200 Temperature (C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 40 50 100 150 200 Temperature (C) Figure 18: Diode Forward voltage vs. Junction Temperature 14 12 3 di/dt=800A/s 125C 12 10 25 25C Qrr 6 20 trr (ns) 8 Irm (A) 125C 30 trr 4 Irm 1.5 6 125C 1 S 2 0 2 0 5 10 15 20 25 0 0 30 5 10 15 20 20 4 Is=20A 18 25 15 10 125C 5 5 Irm trr (ns) 10 Irm (A) 25C Qrr trr 15 20 15 0 200 400 600 800 1000 di/dt (A/ s) Figure 20: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 0 : Sep 2010 3 2.5 12 125C 2 9 S 6 1.5 25C 1 0.5 125 25C 0 3.5 25C 3 0 30 21 Is=20A 125C 25 IS (A) Figure 19: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current IS (A) Figure 18: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 30 0.5 25C 25C 10 2 25C 8 4 125C 15 Qrr (nC) 2.5 10 S di/dt=800A/s 35 Qrr (nC) 0 50 S 0 0 0 0 www.aosmd.com 200 400 600 800 1000 di/dt (A/ s) Figure 21: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 10 of 11 AON6908A Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0 : Sep 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 11 of 11