KAF-1603 IMAGE SENSOR
1536 (H) X 1024 (V) FULL FRAME CCD IMAGE SENSOR
JULY 27, 2012
DEVICE PERFORMANCE SPECIFICATION
REVISION 1.0 PS-0036
KAF-1603 Image Sensor
www.truesenseimaging.com Revision 1.0 PS-0036 Pg 2
TABLE OF CONTENTS
Summary Specification ......................................................................................................................................................................................... 4
Description .................................................................................................................................................................................................... 4
Features ......................................................................................................................................................................................................... 4
Application .................................................................................................................................................................................................... 4
Ordering Information ............................................................................................................................................................................................ 5
Device Description ................................................................................................................................................................................................. 6
Architecture .................................................................................................................................................................................................. 6
Dark Reference Pixels ............................................................................................................................................................................ 7
Output Structure ..................................................................................................................................................................................... 7
Dummy Pixels ........................................................................................................................................................................................... 7
Image Acquisition ........................................................................................................................................................................................ 7
Charge Transport ......................................................................................................................................................................................... 7
Horizontal Register ..................................................................................................................................................................................... 8
Output Structure ..................................................................................................................................................................................... 8
Physical Description .................................................................................................................................................................................... 9
Pin Description and Device Orientation ............................................................................................................................................ 9
Imaging Performance .......................................................................................................................................................................................... 10
Typical Operational Conditions............................................................................................................................................................. 10
Specifications............................................................................................................................................................................................. 10
Typical Performance Curves ............................................................................................................................................................................ 11
Defect Definitions ................................................................................................................................................................................................ 12
Operating Conditions .............................................................................................................................................................................. 12
Specifications............................................................................................................................................................................................. 12
Operation .................................................................................................................................................................................................................. 13
Absolute Maximum Ratings ................................................................................................................................................................... 13
DC Bias Operating Conditions ............................................................................................................................................................... 14
AC Operating Conditions ........................................................................................................................................................................ 14
Clock Levels ........................................................................................................................................................................................... 14
Timing ......................................................................................................................................................................................................................... 15
Requirements and Characteristics ....................................................................................................................................................... 15
Frame Timing ............................................................................................................................................................................................. 16
Line Timing (each Output) ...................................................................................................................................................................... 16
Storage and Handling .......................................................................................................................................................................................... 17
Storage Conditions................................................................................................................................................................................... 17
ESD ............................................................................................................................................................................................................... 17
Cover Glass Care and Cleanliness ......................................................................................................................................................... 17
Environmental Exposure ........................................................................................................................................................................ 17
Soldering Recommendations ................................................................................................................................................................ 17
Mechanical Information ..................................................................................................................................................................................... 18
Completed Assembly ............................................................................................................................................................................... 18
Quality Assurance and Reliability .................................................................................................................................................................. 20
Quality and Reliability ............................................................................................................................................................................. 20
Replacement .............................................................................................................................................................................................. 20
Liability of the Supplier ........................................................................................................................................................................... 20
Liability of the Customer ........................................................................................................................................................................ 20
Test Data Retention ................................................................................................................................................................................. 20
Mechanical .................................................................................................................................................................................................. 20
KAF-1603 Image Sensor
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Life Support Applications Policy .................................................................................................................................................................... 20
Revision Changes................................................................................................................................................................................................... 21
MTD/PS-0666 ............................................................................................................................................................................................. 21
PS-0036 ....................................................................................................................................................................................................... 21
TABLE OF FIGURES
Figure 1: Block Diagram ................................................................................................................................................................................ 6
Figure 2: Microlens Cross-Section............................................................................................................................................................... 6
Figure 3: Output Schematic ......................................................................................................................................................................... 8
Figure 4: Output Structure Load Diagram ................................................................................................................................................ 8
Figure 5: Pinout Diagram .............................................................................................................................................................................. 9
Figure 6: Typical Spectral Response ......................................................................................................................................................... 11
Figure 7: Active Pixel Region ..................................................................................................................................................................... 12
Figure 8: Frame Timing ................................................................................................................................................................................ 16
Figure 9: Line Timing .................................................................................................................................................................................... 16
Figure 10: Timing Diagrams ........................................................................................................................................................................ 16
Figure 11: Completed Assembly (1 of 2) ................................................................................................................................................. 18
Figure 12: Completed Assembly (2 of 2) ................................................................................................................................................. 19
KAF-1603 Image Sensor
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Summary Specification
KAF-1603 Image Sensor
DESCRIPTION
The KAF-1603 Image Sensor is a high performance
monochrome area CCD (charge-coupled device) image
sensor with 1536 H x 1024 V photoactive pixels designed
for a wide range of image sensing applications.
The sensor incorporates true two-phase CCD technology,
simplifying the support circuits required to drive the
sensor as well as reducing dark current without
compromising charge capacity. The sensor also utilizes
the TRUESENSE Transparent Gate Electrode to improve
sensitivity compared to the use of a standard front side
illuminated polysilicon electrode.
Optional microlenses focus the majority of the light
through the transparent gate, increasing the optical
response further.
FEATURES
True Two Phase Full Frame Architecture
TRUESENSE Transparent Gate Electrode for high
sensitivity
APPLICATION
Scientific Imaging
Parameter
Typical Value
Architecture
Full Frame CCD
Total Number of Pixels
1552 (H) x 1032 (V)
Number of Active Pixels
1536 (H) x 1024 (V) = approx. 1.6 M
Pixel Size
9.0 µm (H) x 9.0 µm (V)
Active Image Size
13.8 mm (H) x 9.2 mm (V)
Die Size
15.5 mm (H) x 10 mm (V)
Aspect Ratio
3:2
Saturation Signal
100,000 electrons
Output Sensitivity
10 µV/e-
Quantum Efficiency
(with microlens)
Peak: 77%
400 nm: 45%
Quantum Efficiency
(no microlens)
Peak: 65%
400 nm: 30%
Read Noise
15 electrons
Dark Current (T = 25 °C)
<10 pA/cm2
Dark Current Doubling
Temperature
6.3 °C
Dynamic Range
74 dB
Charge Transfer Efficiency
>0.99999
Blooming Suppression
None
Maximum Data Rate
10 MHz
Package
CERDIP Package (sidebrazed)
Cover Glass
Clear or AR coated, 2sides
Parameters above are specified at 25 °C, unless otherwise noted.
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Ordering Information
Catalog
Number
Product Name
Description
Marking Code
KAF-1603-ABA-CD-B2
Monochrome, Telecentric Microlens, CERDIP Package (sidebrazed), Clear
Cover Glass with AR coating (both sides), Grade 2
KAF-1603-ABA
[Serial Number]
KAF-1603-ABA-CD-AE
Monochrome, Telecentric Microlens, CERDIP Package (sidebrazed), Clear
Cover Glass with AR coating (both sides), Engineering Sample
KAF-1603-ABA-CP-B2
Monochrome, Telecentric Microlens, CERDIP Package (sidebrazed), Taped
Clear Cover Glass, no coatings, Grade 2
KAF-1603-ABA-CP-B3
Monochrome, Telecentric Microlens, CERDIP Package (sidebrazed), Taped
Clear Cover Glass, no coatings, Grade 3
KAF-1603-ABA-CP-AE
Monochrome, Telecentric Microlens, CERDIP Package (sidebrazed), Taped
Clear Cover Glass, no coatings, Engineering Sample
KAF-1603-AAA-CP-B2
Monochrome, No Microlens, CERDIP Package (sidebrazed), Taped Clear
Cover Glass, no coatings, Grade 2
KAF-1603-AAA
[Serial Number]
KAF-1603-AAA-CP-AE
Monochrome, No Microlens, CERDIP Package (sidebrazed), Taped Clear
Cover Glass, no coatings, Engineering Sample
KEK-4H0078-KAF-1602/1603-12-5
Evaluation Board (Complete Kit)
N/A
See Application Note Product Naming Convention for a full description of the naming convention used for Truesense
Imaging image sensors. For reference documentation, including information on evaluation kits, please visit our web
site at www.truesenseimaging.com.
Please address all inquiries and purchase orders to:
Truesense Imaging, Inc.
1964 Lake Avenue
Rochester, New York 14615
Phone: (585) 784-5500
E-mail: info@truesenseimaging.com
Truesense Imaging reserves the right to change any information contained herein without notice. All information
furnished by Truesense Imaging is believed to be accurate.
KAF-1603 Image Sensor
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Device Description
ARCHITECTURE
KAF - 1603
Usable Active Image Area
1536(H) x 1024(V)
9 x 9 µm pixels
3:2 aspect ratio
1536 Active Pixels/Line
4 Dark
10 Inactive
Vrd
R
Vdd
Vout
Vss
Sub
Vog
H1
H2
V1
V2
Guard
2 Inactive
12 Dark
4 Dark lines
4 Dark lines
Figure 1: Block Diagram
The sensor consists of 1552 parallel (vertical) CCD shift registers each 1032 elements long. These registers act as both
the photosensitive elements and as the transport circuits that allow the image to be sequentially read out of the
sensor. The parallel (vertical) CCD registers transfer the image one line at a time into a single 1564 element
(horizontal) CCD shift register. The horizontal register transfers the charge to a single output amplifier. The output
amplifier is a two-stage source follower that converts the photo-generated charge to a voltage for each pixel.
Figure 2: Microlens Cross-Section
Micro lenses are formed along each row. They are effectively half of a cylinder centered on the transparent gates,
extending continuously in the row direction. They act to direct the photons away from the polysilicon gate and through
the transparent gate. This increases the response, especially at the shorter wavelengths (< 600 nm).
V1 electrode
V2 electrode
Micro lens
Silicon
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Dark Reference Pixels
There are 4 light shielded pixels at the beginning of each line, and 12 at the end. There are 4 dark lines at the start of
every frame and 4 dark lines at the end of each frame. Under normal circumstances, these pixels do not respond to
light. However, dark reference pixels in close proximity to an active pixel can scavenge signal depending on light
intensity and wavelength and therefore will not represent the true dark signal.
Output Structure
Charge presented to the floating diffusion is converted into a voltage and current amplified in order to drive off-chip
loads. The resulting voltage change seen at the output is linearly related to the amount of charge placed on the
floating diffusion. Once the signal has been sampled by the system electronics, the reset gate (φR) is clocked to
remove the signal, and the floating diffusion is reset to the potential applied by Vrd (see Figure 3). More signal at the
floating diffusion reduces the voltage seen at the output pin. In order to activate the output structure, an off-chip load
must be added to the Vout pin of the device such as shown in Figure 4.
Dummy Pixels
Within the horizontal shift register are 10 leading additional pixels that are not associated with a column of pixels
within the vertical register. These pixels contain only horizontal shift register dark current signal and do not respond
to light. A few leading dummy pixels may scavenge false signal depending on operating conditions. There are two
more dummy pixels at the end of each line
IMAGE ACQUISITION
An electronic representation of an image is formed when incident photons falling on the sensor plane create electron-
hole pairs within the sensor. These photon-induced electrons are collected locally by the formation of potential wells
at each photogate or pixel site. The number of electrons collected is linearly dependent on light level and exposure
time and non-linearly dependent on wavelength. When the pixel's capacity is reached, excess electrons will leak into
the adjacent pixels within the same column. This is termed blooming. During the integration period, the φV1 and φV2
register clocks are held at a constant (low) level, and the sensor is illuminated. See Figure 8. The sensor must be
illuminated only during the integration period. Light must not reach the sensor during the time the image is read out.
This is usually accomplished with the use of a mechanical shutter or a pulsed light source.
CHARGE TRANSPORT
Referring to Figure 9, the integrated charge from each photogate is transported to the output using a two-step
process. During this readout time, the sensor needs to be protected from all light through the use of a shutter or
pulsed light source. Each line (row) of charge is first moved from the vertical CCD to the horizontal CCD register using
the φV1 and φV2 register clocks. The horizontal CCD is presented a new line on the falling edge of φV2 while φH1 is
held high. The horizontal CCD then transports each line, pixel by pixel, to the output structure by alternately clocking
the φH1 and φH2 pins in a complementary fashion. On each falling edge of φH2 a new charge packet is transferred
onto a floating diffusion and sensed by the output amplifier.
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HORIZONTAL REGISTER
Output Structure
Figure 3: Output Schematic
+15V
0.1uF
Vout
Buffered Output
1k
140
2N3904 or equivalent
~5ma
Figure 4: Output Structure Load Diagram
Floating
Diffusion
HCCD
Charge
Transfer
Source
Follower
#1
Source
Follower
#2
Vrd
R
Vog
H2
H2
H1
VDD
Vout
H1
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PHYSICAL DESCRIPTION
Pin Description and Device Orientation
Pin 1
Pixel 1,1
1
2
3
4
5
6
7
8
9
10
11
12
VOG
Vout
VDD
VRD
R
24
23
22
21
20
19
18
17
16
15
14
13
Guard
V1
V1
Vsub
V2
V2
V2
V2
V1
H2
H1
VSS
V1
N/C
N/C
N/C
N/C
Vsub
N/C
Figure 5: Pinout Diagram
Notes:
1. The KAF-1603 is mechanically the same and electrically identical to the KAF-0402 sensor. It is also mechanically the same as
the KAF-0261 and KAF-3200 sensors. There are some electrical differences since the KAF-0261 has two outputs and two
additional clock inputs. The KAF-3200 requires that pin 11 be a “No connect” and be electrically floating. Refer to their
specifications for details.
Pin
Name
Description
Pin
Name
Description
1
Vog
Output Gate
13
N/C
No Connection (open pin)
2
Vout
Video Output
14
Vsub
Substrate (Ground)
3
Vdd
Amplifier Supply
15
φV1
Vertical CCD Clock - Phase 1
4
Vrd
Reset Drain
16
φV1
Vertical CCD Clock - Phase 1
5
φR
Reset Clock
17
φV2
Vertical CCD Clock - Phase 2
6
Vss
Amplifier Supply Return
18
φV2
Vertical CCD Clock - Phase 2
7
φH1
Horizontal CCD Clock - Phase 1
19
φV2
Vertical CCD Clock - Phase 2
8
φH2
Horizontal CCD Clock - Phase 2
20
φV2
Vertical CCD Clock - Phase 2
9
N/C
No Connection (open pin)
21
φV1
Vertical CCD Clock - Phase 1
10
N/C
No Connection (open pin)
22
φV1
Vertical CCD Clock - Phase 1
11
Vsub
Substrate (Ground)
23
Guard
Guard Ring
12
N/C
No Connection (open pin)
24
N/C
No Connection (open pin)
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Imaging Performance
TYPICAL OPERATIONAL CONDITIONS
All values measured at 25 °C, and nominal operating conditions. These parameters exclude defective pixels.
SPECIFICATIONS
Description
Symbol
Min.
Nom.
Max
Units
Notes
Verification
Plan
Saturation Signal
Vertical CCD capacity
Horizontal CCD capacity
Output Node capacity
Nsat
85000
170000
190000
100000
200000
220000
240000
electrons/pixel
1
design9
Quantum Efficiency (microlens)
Quantum Efficiency (no microlens)
77%
65%
%QE
design9
Photoresponse Non-Linearity
PRNL
1.0
2.0
%
2
design9
Photoresponse Non-Uniformity
PRNU
0.8
%
3
die8
Dark Signal
Jdark
10
2
50
10
electrons/pixel/sec
pA/cm2
4
die8
Dark Signal Doubling Temperature
6.3
7
°C
design9
Dark Signal Non-Uniformity
DSNU
10
50
electrons/pixel/sec
5
die8
Dynamic Range
DR
72
74
DB
6
design9
Charge Transfer Efficiency
CTE
0.99997
0.99999
die8
Output Amplifier DC Offset
Vodc
Vrd
Vrd + 0.5
Vrd + 1.0
V
die8
Output Amplifier Sensitivity
Vout/Ne-
9
10
µV/e-
design9
Output Amplifier Output Impedance
Zout
180
200
220
Ohms
design9
Noise Floor
ne-
15
20
electrons
7
die8
Notes:
1. For pixel binning applications, electron capacity up to 330000 can be achieved with modified CCD inputs. Each sensor may
have to be optimized individually for these applications. Some performance parameters may be compromised to achieve
the largest signals.
2. Worst-case deviation from straight line fit, between 2% and 90% of Vsat.
3. One Sigma deviation of a 128 x 128 sample when CCD illuminated uniformly at half of saturation.
4. Average of all pixels with no illumination at 25 °C
5. Average dark signal of any of 11 x 8 blocks within the sensor (each block is 128 x 128 pixels).
6. 20log (Nsat / ne-) at nominal operating frequency and 25 °C.
7. Noise floor is specified at the nominal pixel frequency and excludes any dark or pattern noises. It is dominated by the
output amplifier power spectrum with a bandwidth = 5 * pixel rate.
8. A parameter that is measured on every sensor during production testing.
9. A parameter that is quantified during the design verification activity.
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Typical Performance Curves
Figure 6: Typical Spectral Response
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
400 500 600 700 800 900 1000
Absolute Quantum Efficiency
Wavelength (nm)
KAF-1603 Spectral Response
with microlens without microlens
KAF-1603 Image Sensor
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Defect Definitions
OPERATING CONDITIONS
All tests performed at T = 25 °C
SPECIFICATIONS
Classification
Point Defect
Cluster Defect
Column Defect
Total
Zone A
Total
Zone A
Total
Zone A
C2
10
5
4
2
0
0
Figure 7: Active Pixel Region
Point Defects Dark: A pixel that deviates by more than 6% from neighboring pixels when illuminated to 70%
of saturation.
-- OR --
Bright: A pixel with a dark current greater than 5000 e-/pixel/sec at 25 °C.
Cluster Defect A grouping of not more than 5 adjacent point defects.
Column Defect A grouping of more than 5 contiguous point defects along a single column.
A column containing a pixel with dark current greater than 12,000 e-/pixel/sec (bright column).
A column that does not meet the minimum vertical CCD charge capacity (low charge capacity
column).
A column which loses more than 250 e- under 2 ke- illumination (trap defect).
Neighboring Pixels The surrounding 128 x 128 pixels or 64 column/rows.
Defect Separation Column and cluster defects are separated by no less than two (2) pixels in any direction
(excluding single pixel defects).
1536,1024
1,1
1536,1
1,1024
368,212
1168,212
1168,812
368,812
Zone A
Center 800 x 600 Pixels
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Operation
ABSOLUTE MAXIMUM RATINGS
Description
Symbol
Minimum
Maximum
Units
Notes
Diode Pin Voltages
Vdiode
0
20
V
1, 2
Gate Pin Voltages
Vgate1
-16
16
V
1, 3, 6
Output Bias Current
Iout
-10
mA
4
Output Load Capacitance
Cload
15
pF
4
Storage Temperature
T
-20
80
°C
Humidity
RH
5
90
%
5
Notes:
1. Referenced to pin Vsub or between each pin in this group.
2. Includes pins: Vrd, Vdd, Vss, Vout.
3. Includes pins: φV1, φV2, φH1, φH2, Vog, Vlg, φR.
4. Avoid shorting output pins to ground or any low impedance source during operation.
5. T = 25 °C. Excessive humidity will degrade MTTF.
6. This sensor contains gate protection circuits to provide some protection against ESD events. The circuits will turn on when
greater than 16 volts appears between any two gate pins. Permanent damage can result if excessive current is allowed to
flow under these conditions.
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DC BIAS OPERATING CONDITIONS
Description
Symbol
Minimum
Nominal
Maximum
Units
Maximum DC Current (mA)
Notes
Reset Drain
Vrd
10.5
11.0
11.5
V
0.01
Output Amplifier Return
Vss
1.5
2.0
2.5
V
-0.5
Output Amplifier Supply
Vdd
14.5
15
15.5
V
Iout
Substrate
Vsub
0
0
0
V
0.01
Output Gate
Vog
3.75
4
5
V
0.01
Guard Ring
Vlg
8.0
9.0
12.0
V
0.01
Video Output Current
Iout
-5
-10
mA
-
1
Note:
1. An output load sink must be applied to Vout to activate output amplifier - see Figure 4.
AC OPERATING CONDITIONS
Clock Levels
Description
Symbol
Level
Minimum
Nominal
Maximum
Units
Effective Capacitance
Vertical CCD Clock - Phase 1
φV1
Low
-10.5
-10.0
-9.5
V
6 nf (all φV1 pins)
Vertical CCD Clock - Phase 1
φV1
High
0
0.5
1.0
V
6 nf (all φV1 pins)
Vertical CCD Clock - Phase 2
φV2
Low
-10.5
-10.0
-9.5
V
6 nf (all φV2 pins)
Vertical CCD Clock - Phase 2
φV2
High
0.5
1.0
V
6 nf (all φV2 pins)
Horizontal CCD Clock - Phase 1
φH1
Low
-4.5
-4.0
-3.5
V
50 pF
Horizontal CCD Clock - Phase 1
φH1
Amplitude
9.5
10.0
10.5
V
50 pF
Horizontal CCD Clock - Phase 2
φH2
Low
-4.5
-4.0
-3.5
V
50 pF
Horizontal CCD Clock - Phase 2
φH2
Amplitude
9.5
10.0
10.5
V
50 pF
Reset Clock
φR
Low
-3.0
-2.0
-1.75
V
50 pF
Reset Clock
φR
Amplitude
5.0
6.0
7.0
V
50 pF
Notes:
1. All pins draw less than 10 µA DC current.
2. Capacitance values relative to VSUB.
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Timing
REQUIREMENTS AND CHARACTERISTICS
Description
Symbol
Minimum
Nominal
Maximum
Units
Notes
φH1, φH2 Clock Frequency
fH
4250
10
MHz
1, 2, 3
Pixel Period (I count)
te
100
1
ns
φH1, φH2 Setup Time
tφHS
0.5
5
µs
φV1, φV2 Clock Pulse Width
tφV
4
20
µs
2
Reset Clock Width
tφR
10
420
ns
4
Readout Time
treadout
178
ms
5
Integration Time
tint
407
6
Line Time
tline
172.4
µs
7
Notes:
1. 50% duty cycle values.
2. CTE may degrade above the nominal frequency.
3. Rise and fall times (10/90% levels) should be limited to 5-10% of clock period. Cross-over of register clocks should be
between 40-60% of amplitude.
4. φR should be clocked continuously.
5. treadout = (1032* tline).
6. Integration time is user specified. Longer integration times will degrade noise performance due to dark signal fixed pattern
and shot noise.
7. tline = (3* tφV) + tφHS + (1564* te) + te.
KAF-1603 Image Sensor
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FRAME TIMING
Frame Timing
tReadout
Line
1
2
1031
1032
1 Frame = 1032 Lines
V1
V2
H1
H2
tint
Figure 8: Frame Timing
LINE TIMING (EACH OUTPUT)
Pixel Timing
Detail
R
H1
H2
Vout
tR
Vsat
Vdark
Vsub
Vodc
1 count
te
Line Timing
Detail
V1
V2
H1
H2
R
1564 counts
tHS
te
tV
tV
Vpix
Figure 9: Line Timing
Line Content
Photoactive
Pixels
Dark Reference
Pixels
Dummy Pixels
1-10
11-14
15 - 1550
1551-1562
1563-1564
Vsat Saturated pixel video output
signal
Vdark Video output signal in no light situation,
(Not zero due to Jdark and Hclock feedthrough)
Vpix Pixel video output signal level, more electrons =less positive*
Vodc Video level offset with respect to vsub
Vsub Analog Ground
* See Image Aquisition section
(page 4)
Figure 10: Timing Diagrams
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Storage and Handling
STORAGE CONDITIONS
Description
Symbol
Minimum
Maximum
Units
Notes
Storage
Temperature
TST
-20
80
°C
1
Operating
Temperature
TOP
-60
60
°C
Notes:
1. Storage toward the maximum temperature will
accelerate color filter degradation.
ESD
1. This device contains limited protection against
Electrostatic Discharge (ESD). ESD events may
cause irreparable damage to a CCD image sensor
either immediately or well after the ESD event
occurred. Failure to protect the sensor from
electrostatic discharge may affect device
performance and reliability.
2. Devices should be handled in accordance with
strict ESD procedures for Class 0 (<250 V per
JESD22 Human Body Model test), or Class A
(<200 V JESD22 Machine Model test) devices.
Devices are shipped in static-safe containers and
should only be handled at static-safe
workstations.
3. See Application Note Image Sensor Handling Best
Practices for proper handling and grounding
procedures. This application note also contains
workplace recommendations to minimize
electrostatic discharge.
4. Store devices in containers made of electro-
conductive materials.
COVER GLASS CARE AND CLEANLINESS
1. The cover glass is highly susceptible to particles
and other contamination. Perform all assembly
operations in a clean environment.
2. Touching the cover glass must be avoided.
3. Improper cleaning of the cover glass may
damage these devices. Refer to Application Note
Image Sensor Handling Best Practices.
ENVIRONMENTAL EXPOSURE
1. Extremely bright light can potentially harm CCD
image sensors. Do not expose to strong sunlight
for long periods of time, as the color filters
and/or microlenses may become discolored. In
addition, long time exposures to a static high
contrast scene should be avoided. Localized
changes in response may occur from color
filter/microlens aging. For Interline devices, refer
to Application Note Using Interline CCD Image
Sensors in High Intensity Visible lighting
Conditions.
2. Exposure to temperatures exceeding maximum
specified levels should be avoided for storage
and operation, as device performance and
reliability may be affected.
3. Avoid sudden temperature changes.
4. Exposure to excessive humidity may affect
device characteristics and may alter device
performance and reliability, and therefore should
be avoided.
5. Avoid storage of the product in the presence of
dust or corrosive agents or gases, as
deterioration of lead solderability may occur. It is
advised that the solderability of the device leads
be assessed after an extended period of storage,
over one year.
SOLDERING RECOMMENDATIONS
1. The soldering iron tip temperature is not to
exceed 370 °C. Higher temperatures may alter
device performance and reliability.
2. Flow soldering method is not recommended.
Solder dipping can cause damage to the glass
and harm the imaging capability of the device.
Recommended method is by partial heating using
a grounded 30 W soldering iron. Heat each pin
for less than 2 seconds duration.
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Mechanical Information
COMPLETED ASSEMBLY
Figure 11: Completed Assembly (1 of 2)
KAF-1603 Image Sensor
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Figure 12: Completed Assembly (2 of 2)
KAF-1603 Image Sensor
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Quality Assurance and Reliability
QUALITY AND RELIABILITY
All image sensors conform to the specifications stated in this document. This is accomplished through a combination
of statistical process control and visual inspection and electrical testing at key points of the manufacturing process,
using industry standard methods. Information concerning the quality assurance and reliability testing procedures and
results are available from Truesense Imaging upon request. For further information refer to Application Note Quality
and Reliability.
REPLACEMENT
All devices are warranted against failure in accordance with the Terms of Sale. Devices that fail due to mechanical and
electrical damage caused by the customer will not be replaced.
LIABILITY OF THE SUPPLIER
A reject is defined as an image sensor that does not meet all of the specifications in this document upon receipt by the
customer. Product liability is limited to the cost of the defective item, as defined in the Terms of Sale.
LIABILITY OF THE CUSTOMER
Damage from mishandling (scratches or breakage), electrostatic discharge (ESD), or other electrical misuse of the
device beyond the stated operating or storage limits, which occurred after receipt of the sensor by the customer, shall
be the responsibility of the customer.
TEST DATA RETENTION
Image sensors shall have an identifying number traceable to a test data file. Test data shall be kept for a period of 2
years after date of delivery.
MECHANICAL
The device assembly drawing is provided as a reference.
Truesense Imaging reserves the right to change any information contained herein without notice. All information
furnished by Truesense Imaging is believed to be accurate.
Life Support Applications Policy
Truesense Imaging image sensors are not authorized for and should not be used within Life Support Systems without
the specific written consent of Truesense Imaging, Inc.
KAF-1603 Image Sensor
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©Truesense Imaging Inc., 2012. TRUESENSE is a registered trademark of Truesense Imaging, Inc.
Revision Changes
MTD/PS-0666
Revision Number
Description of Changes
1.0
Initial Release.
2.0
Remove Grade 3 device option (p9).
Add cover glass configurations (p15).
Update ESD (p10) and Cleanliness (p14) sections.
3.0
Updated format. Removed part numbers.
3.1
Correct table headings (p.14).
3.2
Remove Class 1 parts from the defect specification table
4.0
Removed part numbers 4H0342 and 4H0344
PS-0036
Revision Number
Description of Changes
1.0
Initial release with new document number, updated branding and document template
Updated Storage and Handling and Quality Assurance and Reliability sections