A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVDSS ID = 50 mA 65 V
IDSS VDS = 28 V VGS = 0 V 10 mA
IGSS VDS = 0 V VGS = 20 V 1.0 µA
VGS(th) ID = 100 mA VDS = 10 V 1.0 3.0 6.0 V
gfs ID = 3.0 A VDS = 10 V 1.75 2.5 mho
Ciss
Coss
Crss VDS = 28 V VGS = 0 V f = 1.0 MHz 175
190
40
pF
NF ID = 2.0 A VDD = 28 V f = 150 MHz 3.0 dB
PG
ηD VDD = 28 V IDQ = 250 mA Pout = 125 W
IDQ = 100 mA f = 150 MHz 9.0
50 11.8
60 dB
%
VHF POWER MOSFET
N-Channel Enhancement Mode
MRF174
PACKAGE STYLE .500 4L FLG
DESCRIPTION:
The ASI MRF174 is a gold metallized
N-Channel enhancement mode MOSFET,
intended for use in 28 VDC large signal
applications to 200 MHz.
FEATURES:
• PG = 9.0 dB min. at 150 MHz
• Omnigold™ Metalization System
• Class-A
MAXIMUM RATINGS
ID 13 A
VDSS 65 V
VGS ±40 V
VDGR 65 V
PDISS 270 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θJC 0.65 °C/W
MINIMUM
inche s / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.3 0 / 1 8 .5 4
inches / mm
.230 / 5.84
H.003 / 0.08 .007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
IK
J
.112x45°
FULL R
C
E
B
G
D F
AL
Ø.125 NOM .
.125 / 3.18
.495 / 12.57 .505 / 12.83
.280 / 7.11
S
S D
G
