Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 17 KF6C B2 Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 1700 V TC = 80 C IC,nom. 800 A TC = 25 C IC 1300 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80C ICRM 1600 A Gesamt-Verlustleistung total power dissipation TC=25C, Transistor Ptot 6,25 kW VGES +/- 20V V IF 800 A IFRM 1600 A I2t 170 kA2s VISOL 4 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tp = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125C Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage IC = 800A, VGE = 15V, Tvj = 25C VCE sat IC = 800A, VGE = 15V, Tvj = 125C typ. max. 2,6 3,1 V 3,1 3,6 V 5,5 6,5 V Gate-Schwellenspannung gate threshold voltage IC = 65 mA, VCE = VGE, Tvj = 25C Gateladung gate charge VGE = -15V ... +15V QG 9,6 C Eingangskapazitat input capacitance f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cies 52 nF Ruckwirkungskapazitat reverse transfer capacitance f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cres 2,7 nF VCE = 1700V, VGE = 0V, Tvj = 25C ICES 0,02 1,5 mA 10 80 mA 400 nA Kollektor-Emitter Reststrom collector-emitter cut-off current VGE(th) VCE = 1700V, VGE = 0V, Tvj = 125C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25C prepared by: Alfons Wiesenthal date of publication: 10.11.2000 approved by: Christoph Lubke: 10.11.2000 revision: serie 1(8) IGES 4,5 FF800R17KF6C B2 Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 17 KF6C B2 Charakteristische Werte / Characteristic values min. Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) VGE = 15V, RG = 1,2, Tvj = 25C td,on VGE = 15V, RG = 1,2, Tvj = 25C tr VGE = 15V, RG = 1,8, Tvj = 25C td,off Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data s 0,14 s 1,1 s s 0,13 s 0,14 s Eon 290 mWs Eoff 335 mWs ISC 3200 A LsCE 20 nH RCC+EE 0,16 m IC = 800A, VCE = 900V VGE = 15V, RG = 1,8, Tvj = 25C tf IC = 800A, VCE = 900V, VGE = 15V RG = 1,2, Tvj = 125C, LS = 60nH IC = 800A, VCE = 900V, VGE = 15V RG = 1,8, Tvj = 125C, LS = 60nH tP 10sec, VGE 15V TVj125C, VCC=1000V, VCEmax=VCES -LsCE *dI/dt Modulinduktivitat stray inductance module Modulleitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip 0,14 1,1 VGE = 15V, RG = 1,8, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse s s IC = 800A, VCE = 900V VGE = 15V, RG = 1,8, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) 0,4 0,4 IC = 800A, VCE = 900V VGE = 15V, RG = 1,2, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) max. IC = 800A, VCE = 900V VGE = 15V, RG = 1,2, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) typ. pro Zweig / per arm Charakteristische Werte / Characteristic values min. Diode / Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 800A, VGE = 0V, Tvj = 25C VF IF = 800A, VGE = 0V, Tvj = 125C typ. max. 2,1 2,5 V 2,1 2,5 V IF = 800A, - diF/dt =6300A/sec VR = 900V, VGE = -10V, Tvj = 25C IRM VR = 900V, VGE = -10V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 800A, - diF/dt = 6300A/sec Abschaltenergie pro Puls reverse recovery energy IF = 800A, - diF/dt = 6300A/sec VR = 900V, VGE = -10V, Tvj = 25C Qr VR = 900V, VGE = -10V, Tvj = 125C VR = 900V, VGE = -10V, Tvj = 25C VR = 900V, VGE = -10V, Tvj = 125C 2(8) Erec 800 A 900 A 170 As 310 As 80 mWs 170 mWs FF800R17KF6C B2 Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 17 KF6C B2 Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Transistor / transistor, DC Ubergangs-Warmewiderstand thermal resistance, case to heatsink pro Modul / per module Paste = 1 W/m*K / grease = 1 W/m*K typ. RthJC Diode/Diode, DC RthCK Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj Betriebstemperatur operation temperature Top Lagertemperatur storage temperature Tstg max. 0,02 K/W 0,034 K/W 0,008 K/W 150 C -40 125 C -40 125 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation AlN Kriechstrecke creepage distance 15 mm Luftstrecke clearance 10 mm CTI comperative tracking index min. M1 Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque 275 terminals M4 M2 terminals M8 Gewicht weight G 5 Nm 2 Nm 8 - 10 Nm 1050 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) FF800R17KF6C B2 Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 17 KF6C B2 Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (VCE) VGE = 15V 1800 1600 Tj = 25C 1400 Tj = 125C IC [A] 1200 1000 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) I C = f (VCE) Tvj = 125C 1800 1600 VGE = 20V 1400 VGE = 15V VGE = 12V 1200 VGE = 10V IC [A] VGE = 9V 1000 VGE = 8V 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) FF800R17KF6C B2 Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 17 KF6C B2 Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C = f (VGE) VCE = 20V 1800 1600 Tj = 25C Tj = 125C 1400 IC [A] 1200 1000 800 600 400 200 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) I F = f (VF) 1800 1600 Tvj=25C 1400 Tvj=125C IF [A] 1200 1000 800 600 400 200 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) FF800R17KF6C B2 Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 17 KF6C B2 Schaltverluste (typisch) Eon = f (IC) , E off = f (IC) , E rec = f (IC) Rgon = 1,2 ; Rgoff =1,8 , VCE = 900V, Tj = 125C, VGE = 15V Switching losses (typical) 1400 Eoff 1200 Eon Erec E [mJ] 1000 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 1600 1800 IC [A] Schaltverluste (typisch) Switching losses (typical) E on = f (RG) , E off = f (RG) , E rec = f (RG) IC = 800A , VCE = 900V , Tj = 125C, VGE = 15V 1200 1000 Eoff Eon Erec E [mJ] 800 600 400 200 0 0 2 4 6 8 10 12 14 RG [] 6(8) FF800R17KF6C B2 Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 17 KF6C B2 Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) ZthJC [K / W] 0,1 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 2 3 4 1,88 9,43 2,85 5,84 0,027 0,052 0,09 0,838 15,7 7,05 2,24 9,05 0,0287 0,0705 0,153 0,988 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) Rg = 1,8 Ohm, Tvj= 125C 1800 1600 1400 IC [A] 1200 IC,Modul 1000 IC,Chip 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 1600 1800 VCE [V] 7 (8) FF800R17KF6C B2 Technische Information / Technical Information IGBT-Module IGBT-Modules FF 800 R 17 KF6C B2 Auere Abmessungen / external dimensions 8(8) FF800R17KF6C B2 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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