Frequency Doubler
16 - 24 GHz Output
Rev. V3
MAFC-010511
2
2
2
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Electrical Specifications4: VD = +5 V, VG = -0.7 V, PIN = 0 dBm, TA = +25°C
Parameter Units Min. Typ. Max.
Frequency (Input) GHz 8 — 12
Frequency (Output) GHz 16 — 24
Output Power (POUT) dBm +15 +17 —
1xFIN Leakage dBm — -25 —
3xFIN Leakage dBm — -15 —
4xFIN Leakage dBm — -5 —
Input Return Loss dB — 12 —
Output Return Loss dB — 12 —
Supply Current (ID) mA — 130 —
Absolute Maximum Ratings5,6,7
Parameter Absolute Maximum
Input Power +8 dBm
Drain Voltage +7 V
Gate Voltage -1.5 V to 0 V
Storage Temperature -55°C to +150°C
Case Temperature -40°C to +85°C
Junction Temperature8 +160 ºC
Handling Procedures
The following precautions should be observed to
avoid damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
Class 1A devices.
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. MACOM does not recommend sustained operation near these
survivability limits.
7. Operating at nominal conditions with TJ ≤ 160°C will ensure
MTTF > 1 x 106 hours.
8. Junction Temperature (TJ) = TC + Өjc * ((V * I) - (POUT - PIN))
Typical thermal resistance (Өjc) = 93°C/W.
a) For TC = 25°C,
TJ = 81°C @ 5 V, 130 mA, PIN = +5 dBm, POUT = 17 dBm
b) For TC = 85°C,
TJ =141°C @ 5 V, 130 mA, PIN = +5 dBm, POUT = 17 dBm
4. It is recommended to use active bias on gate voltages to keep the drain currents constant in order to maintain the best performance over
temperature.