HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Prelimi nary Data
Issued Date : 2001.07.01
Revised Date : 2001. 07.26
Page No. : 1/3
H1N5820, H1N5821, H1N5822 HSMC Product Specifi cation
H1N5820 thru H1N5822
3.0 AMPS. S CHOTTKY BARRIER RECTIFIERS
Features
• Low Forward Voltage Drop
• High Current Capability
• High Reliab ility
• High Surge Current Capability
Mechanical Data
• Cases: DO-201AD molded plastic.
• Epoxy: UL 94V-0 rate flame retardant.
• Lead: Axial leads, solderable per MIL-STD-202, Method 208 guaranteed.
• Polarity: Color band denotes cathode end.
• Hig h temperat ure solder ing guarant eed: 250°C/1 0 seconds/.3 75”(9.5m m) lead le ngths at 5 lbs.,
(2.3Kg) tension.
• Weight: 1.10 grams.
Maximum Ratings
Ratings at 25°C ambien t tempera ture unless ot herwis e specified. Sing le phase, hal f wave, 60 Hz ,
resistive or inductive load. For capacitive load, derate current by 20%.
Type Number H1N5820 H1N5821 H1N5822 Units
Maximum Recurrent Peak Reverse Voltage 20 30 40 V
Maximum RMS Voltage 14 21 28 V
Maximum DC B locking Voltage 20 30 40 V
Maximum Average Forward Rectified Current
0.375"(9 .5mm) Lead Length @ TL=9 0°C3A
Peak Forward Surge Current, 8.3ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method) 80 A
Maximum Instantaneous Forward Voltage @ 3A 0.475 0.5 0.525 V
Maximum Instantaneous Forward Voltage @ 9A 0.85 0.9 0.95 V
Maximum DC Reverse Current At Rated DC
Blocking Voltage 2 (@ Ta=25°C)
20 (@ Ta=100°C) mA
mA
Typical Ther mal Resi stance (Note 1) RθJA 40 °C /W
Typical Junction Capacitance (Note 2) 250 pF
Operating Temperature Range Tj -65 to +125 °C
Storage Temperature Range TSTG -65 to +125 °C
Note 1: Thermal resistance from junction to ambient vertical P.C. Board Mounting, 0.375”(9.5mm) lead length.
Note 2: Measured at 1Mhz and applied reverse voltage of 4V D.C.