MCMA140P1600TA - IXYS SEMICONDUCTOR

MCMA140P1600TA

Phase leg

Thyristor Module

3 1 2

6 57 4

Part number

MCMA140P1600TA

Backside: isolated

TAV

T

VV1.28

RRM

140

1600

=

V= V

I= A

2x

Features / Ad vantages: Applications: Package:

● Thyristor for line frequency

● Planar passivated chip

● Long-term stability

● Direct Copper Bonded Al2O3-ceramic

● Line rectifying 50/60 Hz

● Softstart AC motor control

● DC Motor control

● Power converter

● AC power control

● Lighting and temperature control

TO-240AA

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

● Isolation Voltage: V~

4800

IXYS reserves the right to change limits, conditions and dimensions. 20120802bData according to IEC 60747and per semiconductor unless otherwise specified

MCMA140P1600TA

V = V

kA²s

Symbol Definition

Ratings

typ. max.

I

V

IA

V

T

1.29

R0.22 K/W

min.

140

VV

100T = 25°C

VJ

T = °C

VJ

mA10V = V

T = 25°C

VJ

I = A

T

V

T = °C

C

85

P

tot

520 WT = 25°C

C

150

1600

forward voltage drop

total power dissipation

Conditions Unit

1.63

T = 25°C

VJ

140

V

T0

V0.85T = °C

VJ

140

r

T

2.8 mΩ

V1.28T = °C

VJ

I = A

T

V

150

1.70

I = A300

threshold voltage

slope resistance for power loss calculation only

µA

125

VV1600T = 25°C

VJ

IA220

P

GM

Wt = 30 µs 10

max. gate power dissipation

P

T = °C

C

140

Wt = 5

P

GAV

W0.5

average gate power dissipation

C

J

119

j

unction capacitance V = V400 T = 25°Cf = 1 MHz

RVJ

pF

I

TSM

t = 10 ms; (50 Hz), sine T = 45°C

VJ

max. forward surge current

T = °C

VJ

140

I²t T = 45°C

value for fusing

T = °C140

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

thJC

thermal resistance junction to case

T = °C

VJ

140

2.40

2.59

20.8

20.2

kA

2.04

2.21

28.8

27.9

1600

300 µs

RMS forward current

T(RMS)

TAV

180° sine

average forward current

(di/dt)

cr

A/µs

150repetitive, I =T

VJ

= 140°C; f = 50 Hz

critical rate of rise of current

V

GT

gate trigger voltage V= 6 V T = °C25

(dv/dt) T=140°C

critical rate of rise of voltage

A/µs500

V/µs

t = µs;

IA;V = ⅔ V

R = ∞; method 1 (linear voltage rise)

VJ

DVJ

450 A

T

P

G

=0.45

di /dt A/µs;

G

=0.45

DDRM

cr

V = ⅔ V

D DRM

GK

1000

1.5 V

T= °C-40

VJ

I

GT

gate trigger current V= 6 V T = °C25

DVJ

150 mA

T= °C-40

VJ

1.6 V

200 mA

V

GD

gate non-trigger voltage T= °C

VJ

0.2 V

I

GD

gate non-trigger current 10 mA

V = ⅔ V

D DRM

140

latching current T= °C

VJ

200 mAI

L

25tµs

p

=10

IA;

G

= 0.45 di /dt A/µs

G

=0.45

holding current T= °C

VJ

200 mAI

H

25V= 6 V

D

R = ∞

GK

gate controlled delay tim e T= °C

VJ

2µst

gd

25

IA;

G

= 0.45 di /dt A/µs

G

=0.45

V = ½ V

D DRM

turn-off time T= °C

VJ

185 µst

q

di/dt = A/µs;10 dv/dt = V/µs;20

V =

R

100 V; I A;

T

= 150 V = ⅔ V

D DRM

tµs

p

= 200

non-repet., I = 150 A

T

140

R

thCH

thermal resistance case to heatsink K/W

Thyristor

1700

RRM/DRM

RSM/DSM

max. non-repetitive reverse/forward blocking voltage

max. re pe titive reverse/forward bl ocking volt a ge

R/D

reverse current, drain current

T

R/D

200

0.20

IXYS reserves the right to change limits, conditions and dimensions. 20120802bData according to IEC 60747and per semiconductor unless otherwise specified

MCMA140P1600TA

Ratings

C

M

A

140

P

1600

TA

Part description

Thyristor (SCR)

Thyristor

(up to 1800V)

Phase leg

TO-240AA-1B

Module

=

Current Rating [A]

Reverse Voltage [V]

=

Package

T

op

°C

M

D

Nm4

mounting torque 2.5

T

VJ

°C140

virt ua l j un ctio n temp eratu re -40

Weight g90

Symbol Definition typ. max.min.Conditions

operation temperature

Unit

M

T

Nm4

terminal torque 2.5

VV

t = 1 second

V

t = 1 minute

isolation voltage

mm

13.0 9.7

16.0 16.0

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current 200 A

per terminal

125-40

terminal to terminal

TO-240AA

Similar Part Package Voltage class

MCMA140P1800TA TO-240AA-1B 1800

Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

MCMA140P1600TA 509341Box 6MCMA140P1600TAStandard

4800

ISOL

T

stg

°C125

storage temperature -40

4000

threshold voltage V0.85

mΩ

V

0 max

R

0 max

slope resistance * 1.6

Equivalent Circuits for Simulation

T =

VJ

IV

0

R

0

Thyristor

140 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions. 20120802bData according to IEC 60747and per semiconductor unless otherwise specified

MCMA140P1600TA

3 1 2

6 57 4

Outlines TO-240AA

IXYS reserves the right to change limits, conditions and dimensions. 20120802bData according to IEC 60747and per semiconductor unless otherwise specified

MCMA140P1600TA

04080120160

0

40

80

120

160

200

0.01 0.10 1.00 10.00

0.1

1.0

10.0

100.0

0.01 0.1 1

800

1200

1600

2000

0.51.01.52.0

0

50

100

150

200

250

300

1 10 100 1000 10000

0.00

0.04

0.08

0.12

0.16

0.20

0.24

IT

[A]

t[s]

VT[V]

23456789011

103

104

105

I2t

[A2s]

t[ms]

ITSM

[A]

TVJ = 25°C

TVJ = 45°C

50 Hz, 80% VRRM

TVJ = 45°C

VR =0 V

ITAVM

[A]

Tcase [°C]

ZthJC

[K/W]

t [ms]

Fig. 1 Forward characteristics Fig. 2 Surge overload current

ITSM: crest value, t: duration

Fig. 3 I2t versus time (1-10 s)

Fig. 4 Gate voltage & gate current Fig. 6 Max. forward current at

case temperature

Fig. 8 Transient thermal impedance junction to case

tgd

[μs]

IG[A]

lim.

typ.

Fig. 5 Gate controlled delay time tgd

0 40 80 120 160

0

50

100

150

200

250

IT(AV) [A]

Ptot

[W]

Fig. 7a Power dissipation versus direct output current

Fig. 7b and ambient temperature

04080120160

Tamb [°C]

TVJ =125°C

dc =

1

0.5

0.4

0.33

0.17

0.08

dc =

1

0.5

0.4

0.33

0.17

0.08

0.01 0.1 1 10

0.1

1

10

100

VG

[V]

IG[A]

tp=30µs

tp=500µs

PGM =120W

60 W

PGAV =8W

125°C

25°C

IGD

IGT (TVJ =-40°C)

IGT (TVJ =0°C)

IGT (TVJ =25°C)

TVJ =140°C

iR

thi (K/W) ti(s)

1 0.0073 0.0001

2 0.0128 0.0031

3 0.1329 0.084

4 0.067 0.42

TVJ =125°C

140°C

RthHA

0.1

0.2

0.4

0.6

0.8

1.0

Thyristor

IXYS reserves the right to change limits, conditions and dimensions. 20120802bData according to IEC 60747and per semiconductor unless otherwise specified