MMST2222A-G (NPN)
RoHS Device
General Purpose TransistorGeneral Purpose Transistor
QW-BTR06 Page 1
REV:A
SMD Diodes Specialist
Symbol
Parameter Conditions Min
Max
Unit
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Collector-Base breakdown voltage
0.1
IC =10μA , IE=0
Features
-Power dissipation
O
PCM : 0.2W (TA=25 C)
-Collector current
ICM : 0.6A
-Collector-base voltage
V(BR)CBO : 75V
-Operating and storage junction temperature range
O O
TJ, TSTG : -55 C to +150 C
Marking: K3P
Dimensions in inches and (millimeter)
SOT-323
1
Base
2
Emitter
Collector
3
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Base-Emitter saturation voltage
Collector-Emitter saturation voltage
Transition frequency
Delay time
Storage time
Rise time
Fall time
IC =10mA , IB=0
IE =10μA , IC=0
VCB=70V , IE=0
VCE=35V , IB=0
VEB=3V , IC=0
VCE=10V , IC=150mA
VCE=10V , IC=1mA
IC=500mA , IB=50mA
IC=500mA , IB=50mA
VCE=20V , IC=20mA
f=100MHZ
VCC=30V , IC=150mA
VBE(off)=0.5V , IB1=15mA
VCC=30V , IC=150mA
IB1=IB2=15mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
40
75
6
0.1
0.1
300
100
50
0.6
1.2
300
10
25
225
60
V
V
V
µA
µA
µA
V
V
MHZ
nS
nS
nS
nS
1
2
3
0.087 (2.20)
0.070 (1.8)
0.087 (2.20)
0.078 (2.00)
0.016 (0.40)
0.008 (0.20)
0.054 (1.35)
0.045 (1.15)
0.044 (1.10)
0.004 (0.10) min
0.004 (0.10) max
0.006 (0.15)
0.056 (1.40)
0.047 (1.20)
Output capacitance Cob
VCB=10V , IE=0
f=1MHZpF
8
RATING AND CHARACTERISTIC CURVES (MMST2222A-G)
General Purpose TransistorGeneral Purpose Transistor
Page 2
QW-BTR06
REV:A
SMD Diodes Specialist
Fig.1 Grounded Emitter Output
Characteristics
0
IC, Collector Current (mA)
VCE, Collector-Emitter Voltage (V)
0
600
500
400
200
300
100
IB=0μA
5 10
50
100
Fig.2 Collector-Emitter Saturation
Voltage vs. Collector Current
0
VCE(SAT), Collector-Emitter
Saturation Voltage (V)
IC, Collector Current (mA)
1 10 100 1000
0.1
0.2
0.3
O
TA=25 C
IC/IB=10
Fig.3 DC Current Gain vs.
Collector Current
10
hFE, DC Current Gain
IC, Collector Current (mA)
0.1 1.0 10 100 1000
100
1000
O
TA=25 C
VCE=10V
VCE=1V
Fig.4 DC Current Gain vs.
Collector Current
10
hFE, DC Current Gain
IC, Collector Current (mA)
0.1
100
1000
1.0 10 100 1000
VCE=10V
O
TA=125 C
O
25 C
O
-55 C
Fig.5 AC Current gain vs.
Collector Current
10
hFE, AC Current Gain
IC, Collector Current (mA)
0.1
100
1000
1.0 10 100 1000
O
TA=25 C
VCE=10V
f=1KHz
Fig.6 Base-Emitter Saturation Voltage vs.
Collector Current
0
VBE(SAT), Base-Emitter Saturation Voltage (V)
IC, Collector Current (mA)
1.0 10 100 1000
0.4
0.8
1.2
1.6
1.8
O
TA=25 C
IC/IB=10
O
TA=25 C
RATING AND CHARACTERISTIC CURVES (MMST2222A-G)
General Purpose TransistorGeneral Purpose Transistor
Page 3
QW-BTR06
REV:A
SMD Diodes Specialist
Fig.8 Turn-on time vs. Collector Current
10
ton, Turn-on Time (nS)
IC, Collector Current (mA)
1.0 10 100 1000
100
1000
Fig.9 Rise Time vs. Collector Current
5
tr, Rise Time (nS)
IC, Collector Current (mA)
1.0 10 100 1000
100
500
Fig.10 Storage Time vs. Collector Current
10
ts, Storage Time (nS)
IC, Collector Current (mA)
100
1000
1.0 10 100 1000
Fig.11 Fall Time vs. Collector Current
10
tf, Fall Time (nS)
IC, Collector Current (mA)
100
1000
Fig.7 Grounded-Emitter Propagation
Characteristics
0
VBE(on), Base-Emitter Voltage (V)
IC, Collector Current (mA)
1.0 10 100 1000
0.4
0.8
1.2
1.6
1.8
O
TA=25 C
VCE=10V
O
TA=25 C
IC/IB=10
VCC=30V
VCC=10V
10
O
TA=25 C
VCC=30V
IC/IB=10
O
TA=25 C
VCC=30V
IC=10IB 1=10IB2
O
TA=25 C
VCC=30V
IC=10IB 1=10IB2
1.0 10 100 1000
O
TA=25 C
f=1MHz
Fig.12 Input/Output Capacitance vs. Voltage
1
Capacitance (pF)
Reverse Bias Voltage (V)
10
100
0.1 1.0 10 100
Cib
Cob
RATING AND CHARACTERISTIC CURVES (MMST2222A-G)
General Purpose TransistorGeneral Purpose Transistor
Page 4
QW-BTR06
REV:A
SMD Diodes Specialist
Fig.14 Gain Bandwidth product
vs. Collector Current
10
Current Gain-Bandwidth
Product (MHz)
IC, Collector Current (mA)
1.0 10 100 1000
100
1000
Fig.13 Gain Bandwidth Product
0.1
VCE, Collector-Emitter Voltage (V)
IC, Collector Current (mA)
1.0 10 100 1000
1.0
10
100
250MHz
300MHz
250MHz
200MHz
100MHz
O
TA=25 C O
TA=25 C
VICE=10V