GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400, SFH 401, SFH 402 SFH 400 SFH 401 SFH 402 Wesentliche Merkmale Features * Hergestellt im Schmelzepitaxieverfahren * Kathode galvanisch mit dem Gehauseboden verbunden * Hohe Zuverlassigkeit * Gute spektrale Anpassung an Si-Fotoempfanger * Hermetisch dichtes Metallgehause * SFH 400: Gehausegleich mit SFH 216 * SFH 401: Gehausegleich mit BPX 43, BPY 62 * SFH 402: Gehausegleich mit BPX 38, BPX 65 * * * * * * * * Anwendungen Applications * Lichtschranken fur Gleich- und Wechsellichtbetrieb * IR-Geratefernsteuerungen * Sensorik * Lichtgitter * * * * Fabricated in a liquid phase epitaxy process Cathode is electrically connected to the case High reliability Matches all Si-Photodetectors Hermetically sealed package SFH 400: Same package as SFH 216 SFH 401: Same package as BPX 43, BPY 62 SFH 402: Same package as BPX 38, BPX 65 Photointerrupters IR remote control of various equipment Sensor technology Light-grille barrier Typ Type Bestellnummer Ordering Code Gehause Package SFH 400 Q62702-P96 SFH 400-3 Q62702-P784 SFH 401 Q62702-P97 SFH 401-3 Q62702-P787 SFH 402 Q62702-P98 18 A3 DIN 41876 (TO-18), Glaslinse, hermetisch dichtes Gehause, Anschlusse im 2.54-mm-Raster (1/10'') 18 A3 DIN 41876 (TO-18) glass lens, hermetically sealed package, solder tabs lead spacing 2.54 mm (1/10'') SFH 402-3 Q62702-P790 2001-02-22 1 SFH 400, SFH 401, SFH 402 Grenzwerte (TC = 25 C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range SFH 400, SFH 402 Top; Tstg - 40 ... + 125 C Betriebs- und Lagertemperatur Operating and storage temperature range SFH 401 Top; Tstg - 40 ... + 100 C Sperrspannung Reverse voltage VR 5 V Durchlastrom Forward current IF 300 mA Stostrom, tp = 10 s, D = 0 Surge current IFSM 3 A Verlustleistung Power dissipation Ptot 470 mW Warmewiderstand Thermal resistance RthJA RthJC 450 160 K/W K/W Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms peak 950 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA, tp = 20 ms 55 nm 6 15 40 Grad deg. A 0.25 mm2 Kennwerte (TA = 25 C) Characteristics Abstrahlwinkel Half angle SFH 400 SFH 401 SFH 402 Aktive Chipflache Active chip area 2001-02-22 2 SFH 400, SFH 401, SFH 402 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Abmessungen der aktiven Chipflache Dimensions of the active chip area LxB LxW 0.5 x 0.5 mm Abstand Chipoberflache bis Linsenscheitel Distance chip front to lens top SFH 400 SFH 401 SFH 402 H H H 4.0 ... 4.8 2.8 ... 3.7 2.1 ... 2.7 mm mm mm Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 tr, tf 1 s Kapazitat, Capacitance VR = 0 V, f = 1 MHz Co 40 pF VF VF 1.30 ( 1.5) 1.90 ( 2.5) V V Sperrstrom, Reverse current VR = 5 V IR 0.01 ( 1) A Gesamtstrahlungsflu, Total radiant flux IF = 100 mA, tp = 20 ms e 8 mW Temperaturkoeffizient von Ie bzw. e, TCI - 0.55 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV - 1.5 mV/K Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TC + 0.3 nm/K Durchlaspannung, Forward voltage IF = 100 mA, tp = 20 ms IF = 1A, tp = 100 s IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA 2001-02-22 3 SFH 400, SFH 401, SFH 402 Gruppierung der Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Grouping of Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit SFH 400 SFH 400-3 SFH 401 SFH 401-3 SFH 402 SFH 402-3 Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Ie min. Ie max. 20 - > 32 - > 10 - > 16 - 2.5 - >4 - mW/sr mW/sr Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Ie typ. 300 320 120 190 40 40 mW/sr 2001-02-22 4 SFH 400, SFH 401, SFH 402 Radiation Characteristics, SFH 400 rel = f () 40 30 20 10 0 OHR01883 1.0 50 0.8 60 0.6 70 0.4 0.2 80 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Radiation Characteristics, SFH 401 rel = f () 40 30 20 10 0 OHR01884 1.0 50 0.8 60 0.6 70 0.4 0.2 80 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Radiation Characteristics, SFH 402 rel = f () 40 30 20 10 0 OHR01885 1.0 50 0.8 60 0.6 70 0.4 0.2 80 0 90 100 1.0 2001-02-22 0.8 0.6 0.4 0 20 40 60 80 100 5 120 SFH 400, SFH 401, SFH 402 Relative Spectral Emission Irel = f () Single pulse, tp = 20 s OHRD1938 100 OHR01037 10 2 e Max. Permissible Forward Current SFH 401, IF = f (TA) OHR00486 350 F mA 300 e (100 mA) % rel e = f (IF ) e 100 mA Radiant Intensity 80 250 10 1 60 R thJC = 160 K/W 200 150 40 10 R thJA = 450 K/W 0 100 20 50 0 880 920 960 1000 nm 1060 10 -1 10 -2 10 -1 10 0 A F Permissible Pulse Handling Capability IF = f (), TC = 25 C, RthJC = 160 K/W, duty cycle D = parameter Forward Current IF = f (VF) F OHR01040 10 1 A F OHR01937 10 4 mA tP D= 5 typ. 10 0 tP T F 0.2 0.5 0 0 40 60 80 C 100 TA , TC Max. Permissible Forward Current SFH 400, SFH 402, IF = f (T A ) OHR00395 350 F mA 300 250 R thJC = 160 K/W 200 150 R thJA = 450 K/W 5 -1 20 T D= 0.005 0.01 0.02 0.05 0.1 max. 10 3 10 10 1 100 DC 50 10 -2 1 1.5 2001-02-22 2 2.5 3 3.5 4 V 4.5 VF 10 2 10 -5 10 -4 10 -3 6 10 -2 s 10 0 0 0 20 40 60 80 100 C 130 TA , TC SFH 400, SFH 401, SFH 402 Mazeichnung Package Outlines SFH 400 Radiant Sensitive area 5.3 (0.209) 5.0 (0.197) 3) .0 04 35) ( .0 1.1 .9 (0 0 1. 0.9 1 (0 (0 .043 .03 ) 5) 14.5 (0.571) 12.5 (0.492) 7.4 (0.291) 6.6 (0.260) o5.6 (0.220) o5.3 (0.209) o4.8 (0.189) o4.6 (0.181) o0.45 (0.018) 2.54 (0.100) spacing Cathode (SFH 480) Anode (SFH 216, SFH 400) Chip position 2.7 (0.106) GEOY6314 SFH 401 5) .04 .03 (0 (0 1.1 o4.8 (0.189) o4.6 (0.181) 0.9 3) 5) .03 (0 .04 (0 0.9 welded 5.3 (0.209) Anode = SFH 481 Cathode = SFH 401 (package) 1.1 2.54 (0.100) spacing o0.45 (0.018) 3) (2.7 (0.106)) Chip position glass lens 5.0 (0.197) 14.5 (0.571) 6.4 (0.252) 12.5 (0.492) 5.6 (0.220) o5.6 (0.220) o5.3 (0.209) GETY6091 SFH 402 o5.3 (0.209) o5.0 (0.197) (0 .0 2.54 (0.100) spacing 3) .04 (0 035) . (0 0.9 12.5 (0.492) Cathode (SFH 402, BPX 65) Anode (SFH 482) ) 3) 1.1 14.5 (0.571) 35 .04 (0 1.1 0.9 o0.45 (0.018) Radiant sensitive area o4.8 (0.189) o4.6 (0.181) (2.7 (0.106)) Chip position 5.5 (0.217) 5.0 (0.197) o5.6 (0.220) o5.3 (0.209) GETY6013 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2001-02-22 7 SFH 400, SFH 401, SFH 402 Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-22 8