SFH 400
GaAs-IR-Lumineszenzdiode
GaAs Infrare d Emitter
SFH 401 SFH 402
2001-02-22 1
SFH 400, SFH 401, SFH 402
Wesentliche Merkmale
• Hergestellt im Schmelzepitaxieverfahren
• Kathode galvanisch mit dem Gehäuseboden
verbunden
• Hohe Zuverlässigkeit
• Gute spektrale Anpassung an
Si-Fotoempfänger
• Hermetisch dichtes Metallgehäuse
• SFH 400: Gehäusegleich mit SFH 216
• SFH 401: Gehäusegleich mit BPX 43, BPY 62
• SFH 402: Gehäusegleich mit BPX 38, BPX 65
Anwendungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• IR-Gerätefernsteuerungen
• Sensorik
• Lichtgitter
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
SFH 400 Q62702-P96 18 A3 DIN 41876 (TO-18), Glaslinse, hermetisch
dichtes Gehäuse, Anschlüsse im 2.54-mm-Raster
(1/10’’)
18 A3 DIN 41876 (TO-18) glass lens, hermetically
sealed package, solder tabs lead spacing
2.54 mm (1/10’’)
SFH 400-3 Q62702-P784
SFH 401 Q62702-P97
SFH 401-3 Q62702-P787
SFH 402 Q62702-P98
SFH 402-3 Q62702-P790
Features
•Fabricated in a liquid phase epitaxy process
•Cathode is electrically connected to the case
•High reliability
•Matches all Si-Photodetectors
•Hermetically sealed package
•SFH 400: Same package as SFH 216
•SFH 401: Same package as BPX 43, BPY 62
•SFH 402: Same package as BPX 38, BPX 65
Applications
•Photointerrupters
•IR remote control of various equipment
•Sensor technology
•Light-grille barrier
2001-02-22 2
SFH 400, SFH 401, SFH 402
Grenzwerte (TC = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
SFH 400, SFH 402
Top; Tstg – 40 …+ 125 °C
Betriebs- und Lagertemperatur
Operating and storage temperature range
SFH 401
Top; Tstg – 40 …+ 100 °C
Sperrspannung
Reverse voltage VR5V
Durchlaßstrom
Forward current IF300 mA
Stoßstrom, tp = 10 µs, D = 0
Surge current IFSM 3A
Verlustleistung
Power dissipation Ptot 470 mW
Wärmewiderstand
Thermal resistance RthJA
RthJC
450
160 K/W
K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA, tp = 20 ms
∆λ 55 nm
Abstrahlwinkel
Half angle
SFH 400
SFH 401
SFH 402
ϕ
ϕ
ϕ
± 6
± 15
± 40 Grad
deg.
Aktive Chipfläche
Active chip area A0.25 mm2
SFH 400, SFH 401, SFH 402
2001-02-22 3
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area L×B
L×W0.5 ×0.5 mm
Abstand Chipoberfläche bis Linsenscheitel
Distance chip front to lens top
SFH 400
SFH 401
SFH 402
H
H
H
4.0 …4.8
2.8 …3.7
2.1 …2.7
mm
mm
mm
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, RL = 50 Ω
Switching tim es, Ιe from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50 Ω
tr, tf1µs
Kapazität,
Capacitance
VR = 0 V, f = 1 MHz
Co40 pF
Durchlaßspannung,
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1A, tp = 100 µsVF
VF
1.30 (≤ 1.5)
1.90 (≤ 2.5) V
V
Sperrstrom,
Reverse current
VR = 5 V
IR0.01 (≤ 1) µA
Gesamtstrahlungsfluß,
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe8mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe,
IF = 100 mA
TCI– 0.55 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA TCV– 1.5 mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA TCλ+ 0.3 nm/K
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
2001-02-22 4
SFH 400, SFH 401, SFH 402
Gruppierung der Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Grouping of Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH
400 SFH
400-3 SFH
401 SFH
401-3 SFH
402 SFH
402-3
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms Ie min.
Ie max.
20
–> 32
–> 10
–> 16
–2.5
–> 4
–mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µsIe typ.300 320 120 190 40 40 mW/sr
SFH 400, SFH 401, SFH 402
2001-02-22 5
Radiation Characteristics, SFH 400 Ιrel = f (ϕ)
Radiation Characteristics, SFH 401 Ιrel = f (ϕ)
Radiation Characteristics, SFH 402 Ιrel = f (ϕ)
OHR01883
02040 60 80 100 1200.40.60.81.0
100
90
80
70
60
50
0
10203040
0
0.2
0.4
0.6
0.8
1.0
ϕ
OHR01884
02040 60 80 100 1200.40.60.81.0
100
90
80
70
60
50
0
10203040
0
0.2
0.4
0.6
0.8
1.0
ϕ
OHR01885
02040 60 80 100 1200.40.60.81.0
100
90
80
70
60
50
0
10203040
0
0.2
0.4
0.6
0.8
1.0
φ
SFH 400, SFH 401, SFH 402
2001-02-22 6
Relati ve Sp ectral Emission
Irel = f (λ)
Forward Cu rrent
IF = f (VF)
OHRD1938
λ
rel
Ι
0880 920 960 1000
nm
1060
20
40
60
80
%
100
V
OHR01040
F
F
Ι
1
1
10
0
10
-1
10
10
-2
A
1.5 2 2.5 3 3.5 4 4.5
typ. max.
V
Radiant Intensity
Single pulse , tp = 20 µs
Permissible Pulse Handling
Capability IF = f (τ), TC = 25 °C,
RthJC = 160 K/ W, d u ty cycl e
D= parameter
Ιe
Ιe 100 mA = f (IF)
Ι
OHR01037
F
-1
10
10 0
1
10
2
10
10 -2 -1
10 0
10 A 10 1
Ι
e
Ι
e(100 mA)
τ
OHR01937
10
-5
s
10
2
Ι
F
mA
10
-4
10
-3
10
-2
10
0
10
3
10
4
5
5
DC
0.5
0.05
0.02
0.01
0.005
D =
0.1
F
Ι
T
P
t
=D
P
t
T
0.2
Max. Permissible Forward Current
SFH 401 , IF = f (TA)
Max. Permissible Forward Current
SFH 400 , SFH 402,
IF = f (TA)
T
OHR00486
A
0
F
Ι
0 20 40 60 80 100˚C
50
100
150
200
250
300
mA
350
,
C
T
= 160 K/W
thJC
R
RthJA = 450 K/W
T
OHR00395
A
0
F
Ι
0˚C
50
100
150
200
250
300
mA
350
,
C
T
= 160 K/W
thJC
R
RthJA = 450 K/W
20 40 60 80 100 130
SFH 400, SFH 401, SFH 402
2001-02-22 7
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: mm (inch) / Dimensio ns are s pecified as follow s: m m (inc h).
SFH 400
ø5.6 (0.220)
ø5.3 (0.209)
2.54 (0.100)
spacing
ø0.45 (0.018)
Cathode (SFH 480)
2.7 (0.106)
14.5 (0.571)
12.5 (0.492)
5.3 (0.209)
5.0 (0.197)
ø4.8 (0.189)
ø4.6 (0.181)
GEOY6314
7.4 (0.291)
6.6 (0.260)
0.9 (0.035)
1.1 (0.043)
1.1 (0.043)
0.9 (0.035)
Anode
Radiant
Sensitive area
Chip position (SFH 216, SFH 400)
SFH 401
5.3 (0.209)
5.0 (0.197) 6.4 (0.252)
5.6 (0.220)
ø4.8 (0.189)
glass
lens
welded
Anode
Cathode = SFH 481
= SFH 401
GETY6091
(package)
ø4.6 (0.181)
1.1 (0.043)
0.9 (0.035)
0.9 (0.035)
1.1 (0.043)
ø5.3 (0.209)
ø5.6 (0.220)
spacing
2.54 (0.100)
ø0.45 (0.018)
(2.7 (0.106)) Chip position
12.5 (0.492)
14.5 (0.571)
SFH 402
5.5 (0.217)
5.0 (0.197)
ø5.3 (0.209)
ø5.0 (0.197)
GETY6013
Chip position
Cathode (SFH 402, BPX 65)
Anode (SFH 482)
0.9 (0.035)
1.1 (0.043)
0.9 (0.035)
1.1 (0.043)
ø5.3 (0.209)
ø5.6 (0.220)
2.54 (0.100)
spacing
14.5 (0.571)
12.5 (0.492)
ø4.6 (0.181)
ø4.8 (0.189)
sensitive area
Radiant
(2.7 (0.106))
ø0.45 (0.018)
2001-02-22 8
SFH 400, SFH 401, SFH 402
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of compon ent and shall not be considered as assur ed c haracteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assume th at the health of the user may be endangered.
