SEMiX®3
Trench IGBT Modules
SEMiX 603GB066HD
SEMiX 603GAL066HD
SEMiX 603GAR066HD
Target Data
Features
 
  
   
 
Typical Applications
!" 
# $
  $
Remarks
  % 
&'() "*
+% ,   %
 -&(.)
 %/ 0 1 23 4 0 &( 3 -
&(.)3  51.
GB GAL GAR
Absolute Maximum Ratings  '()6    %
Symbol Conditions Values Units
IGBT
 1..
$ '( 8. )6 - &(. ) 95. ('. :
$ '( 8. )6 - &9( ) 8.. 1&. :
$#! &  &'.. :
4 ; '.
-6  < =. *** > &9( &'( )
 :6 & * =...
Inverse diode
$? '( 8. )6 - &(. ) (5. 5(. :
$? '( 8. )6 - &9( ) (@. =5. :
$?#! &  &'.. :
$?! &. 3 *3 - '( ) '9.. :
Freewheeling diode
$? '( 8. )6 - &(. ) 1=. =5. :
$? '( 8. )6 - &(. ) 9&. ('. :
$?! &. 3 3 - &9( ) :
Characteristics  '()6    %
Symbol Conditions min. typ. max. Units
IGBT
4 4 6 $ = : (68
$ 4 .6  6 - '(  ) .6& :
A - '( &(. ) .6@ .68( & .6@
 4 &( 6 - '( &(. ) .6@ &6= &6( ' B
 $ 1.. :6 4 &( 6
- '( &(. )6  
&6=( &69 &6@ '6&
 %  % 59 ?
 4 .6  '( 6 & !C '65 ?
 &6& ?
D '. 
#E>E <6 '( &'( ) .69 &6.( B
%F 5.. 6 $ 1.. : &=( F &=( 
% F 4 ;&( &.5. F &.( 
  #4 #4 5G6- &(. ) &' =5 H
Inverse diode, Freewheeling diode
?  $? 1.. :3 4 .3- '( &(.
)6  
&6= &6= &61
A - '( &(. ) & .68( &6&
- '( &(. ) .69 .6@ .685 B
$##! $? 1.. :3 - '( &(. ) 5(' :
I %F% 58.. :F2 15 2
 4 <&( &5 H
Thermal characteristics
#-<  $4J .6.95 KFL
#-<M  $ M% .6&( KFL
#-<?M  ?LM KFL
#<  % .6.= KFL
Temperature sensor
#'( '( ) ( ;(N OG
J'(F8( #'#&"PJ&F'<&F&Q 3 PKQ3J 5='. K
Mechanical data
!F! O !( F   !1 5F'6( ( F( R
'8@
SEMiX 603GB066HD ...
1 20-04-2006 GES © by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SEMiX 603GB066HD ...
2 20-04-2006 GES © by SEMIKRON
Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD
Fig. 11 CAL diode forward charact., incl. RCC´+EE´ Fig. 12 Typ. CAL diode peak reverse recovery current
SEMiX 603GB066HD ...
3 20-04-2006 GES © by SEMIKRON
Fig. 13 Typ. CAL diode recovered charge
 !S5
4J + !S 5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SEMiX 603GB066HD ...
4 20-04-2006 GES © by SEMIKRON