PTFB211501E
PTFB211501F
Data Sheet 1 of 13 Rev. 02, 2009-11-19
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTFB211501E and PTFB211501F are thermally-enhanced,
150-watt, LDMOS FETs designed for cellular power amplifier
applications in the 2110 – 2170 frequency band. Features include
I/O matching, high gain, and thermally-enhanced ceramic open-cavity
packages with slotted and earless flanges.
PTFB211501E
Package H-36248-2
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 2110 – 2170 MHz
RF Characteristics
Single-carrier WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 40 W AVG, ƒ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.5 dB
@ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 17 18 —dB
Drain Efficiency ηD27 32 —%
Intermodulation Distortion IMD—–34 –32 dBc
PTFB211501F
Package H-37248-2
Features
•Broadband internal matching
•Typical single-carrier WCDMA performance at
2170 MHz, 30 V, IDQ = 1.2 A, 3GPP signal, channel
bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
CCDF
- Average output power = 40 W
- Linear Gain = 18 dB
- Efficiency = 32%
- Adjacent channel power = –34 dBc
•Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 150 W
- Efficiency = 55%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Capable of handling 10:1 VSWR @ 30 V,
150 W (CW) output power
•Pb-Free and RoHS compliant
*See Infineon distributor for future availability.
Single-carrier WCDMA Drive Up
VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz
3GPP WCDMA, PAR = 8.5 dB, BW 3.84 MHz
-55
-50
-45
-40
-35
-30
-25
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
ACP (dBc)
0
10
20
30
40
50
60
Drain Efficiency (%)
ACP Low
Efficiency
ACP Up
*See Infineon distributor for future availability.
PTFB211501E
PTFB211501F
Data Sheet 2 of 13 Rev. 02, 2009-11-19
RF Characteristics (cont.)
Two-tone Measurement (not subject to production test - verified by design / characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 140 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps —18 —dB
Drain Efficiency ηD—40 —%
Intermodulation Distortion IMD —–30 —dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.08 —Ω
Operating Gate Voltage VDS = 30 V, IDQ = 1.2 A VGS 1.6 2.1 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –6 to +10 V
Junction Temperature TJ200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 150 W CW) RθJC 0.29 °C/W
Ordering Information
Type and Version Package Outline Package Description Shipping
PTFB211501E V4 H-36248-2 Slotted flange, single-ended Tray
PTFB211501E V4 R250 H-36248-2 Slotted flange, single-ended Tape & Reel 250 pcs
PTFB211501F V4 H-37248-2 Earless flange, single-ended Tray
PTFB211501F V4 R250 H-37248-2 Earless flange, single-ended Tape & Reel 250 pcs
*See Infineon distributor for future availability.
PTFB211501E
PTFB211501F
Data Sheet 3 of 13 Rev. 02, 2009-11-19
Typical Performance (data taken in production test fixture)
Two-tone Broadband
VDD = 30 V, IDQ = 1.20 A, POUT = 63 W
15
20
25
30
35
40
45
50
55
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
-50
-45
-40
-35
-30
-25
-20
-15
-10
Return Loss (dB), IMD (dBc)
Gain
Efficiency
IMD3
IRL
Gain / Efficiency (dB / %)
Two-tone Drive-up
VDD = 30 V, IDQ = 1.20 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
15
16
17
18
19
40 42 44 46 48 50 52 54
Output Power, PEP (dBm)
Gain (dB)
0
10
20
30
40
50
Efficiency (%)
Efficiency
Gain
Single-carrier WCDMA, 3GPP Broadband
VDD = 30 V, IDQ = 1.20 A, POUT = 40 W
15
20
25
30
35
40
45
50
2080 2100 2120 2140 2160 2180 2200
Frequency (MHz)
-45
-40
-35
-30
-25
-20
-15
-10
IRL (dB) / ACP Up (dBc)
Efficiency
IRL
Gain / Efficiency (dB / %)
ACP
Gain
Two-tone Drive-up
VDD = 30 V, IDQ = 1.20 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
-60
-50
-40
-30
-20
-10
40 42 44 46 48 50 52 54
Output Power, PEP (dBm)
IMD (dBc)
5
15
25
35
45
55
Efficiency (%)
Efficiency
IMD3
PTFB211501E
PTFB211501F
Data Sheet 4 of 13 Rev. 02, 2009-11-19
Typical Performance (cont.)
Two-tone Drive-up
at Selected Frequencies
VDD = 30 V, IDQ = 1.20 A, tone spacing = 1 MHz
-60
-50
-40
-30
-20
41 43 45 47 49 51 53
Output Power, PEP (dBm)
IMD (dBc)
2170 MHz
2140 MHz
2110 MHz
CW Performance
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz
14
15
16
17
18
19
42 43 44 45 46 47 48 49 50 51 52
Output Power (dBm)
Gain (dB)
10
20
30
40
50
60
Drain Efficiency (%)
+25°C
+85°C
–10°C
Gain
Efficiency
CW Performance
Gain vs. Output Power
VDD = 30 V, ƒ = 2170 MHz
16
17
18
19
41 43 45 47 49 51 53
Output Power (dBm)
Power Gain (dB)
IDQ = 1.40 A
IDQ = 1.20 A
IDQ = 0.80 A
Power Sweep, CW
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz
15
16
17
18
19
20
41 43 45 47 49 51 53
Output Power (dBm)
Gain (dB)
15
25
35
45
55
65
Drain Efficiency (%)
Efficiency
Gain
PTFB211501E
PTFB211501F
Data Sheet 5 of 13 Rev. 02, 2009-11-19
Intermodulation Distortion
vs. Output Power
VDD = 30 V, IDQ = 1.20 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
-60
-50
-40
-30
-20
40 45 50 55
Output Power, PEP (dBm)
IMD (dBc)
3rd Order
7th
5th
Typical Performance (cont.)
Bias Voltage vs. Temperature
series show current
0.97
0.98
0.99
1
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
2 A
4 A
8 A
10 A
12 A
14 A
16 A
Z Source Z Load
G
S
D
Broadband Circuit Impedance
0.1
0.2
0.1
0
.
3
0
.2
-
W
AV
E
LE
N
GT
H
S
T
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
Z Source
Z Load
2080 MHz
2200 MHz
Z0 = 50 Ω
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
2200 4.29 –8.14 1.49 –4.39
2170 4.36 –8.34 1.52 –4.50
2140 4.45 –8.53 1.55 –4.61
2110 4.55 –8.74 1.58 –4.72
2080 4.67 –8.95 1.62 –4.84
PTFB211501E
PTFB211501F
Data Sheet 6 of 13 Rev. 02, 2009-11-19
TL118
TL 119
TL120 TL121
TL122
TL123
TL 124 TL125TL 126
TL 127
C107
0.4 pF C108
0.4 pF
C101
10 pF
VGS1
C803
1000 pF
C802
1000 pF
C801
1000 pF
C104
1000000 pF
C103
10000 pF
C106
10000 pF
C102
10 pF
C105
10000000 pF
1 2
3
TL134 TL133 TL132
1 2
3
TL131 TL130
12
3
TL 129TL 117
R801
1300 Ohm
R102
2000 Ohm
R101
5100 Ohm
1
2
3
TL108
1
2
3
TL107 1 2
3
TL111 1
2
3
TL101
1 2
3
TL110
12
3
TL103
TL 112
TL105
TL102
TL 104 TL 116 TL 115 TL114 TL 113
TL109
TL106
TL 128
3
S3
In Out
NC NC
1
2 3
45
6 7
8
S2
S
C
B
E
1
2
3
4
S1
R103
10 Ohm
R804
1000 Ohm
R803
1000 Ohm
R802
1200 Ohm
GATE DUTRF IN b211501 ef -v 4_ bdin _11-18 -2009
C201
1.2 pF
C202
10 pF
1 2
3
TL201TL202 TL203 TL204 TL205 TL206
TL207
TL208
TL209
TL210
TL211
TL212 TL213 TL214 TL215
1
2
3
4
TL216
TL217
TL218
TL219
TL220
TL221
TL222
TL223
TL224
TL225
VDD2
VDD1
C203
1000000 pF
C204
1000000 pF
C205
20000 pF
C206
20000 pF
C207
10 pF
C208
10 pF C209
10000000 pF
C210
10000000 pF
RF OUT
TL226
12
3
TL227
1 2
3
TL228
12
3
TL229
1 2
3
TL230
1 2
3
TL231
12
3
TL232
12
3
TL233
1 2
3
TL234 TL235
TL236
TL237 TL238
TL239
TL240
TL241
TL242
DRAIN DUT
b211501 ef-v 4 _ bdout _11-18 -2009
Reference Circuit
Reference circuit input schematic for ƒ = 2170 MHz
Reference circuit output schematic for ƒ = 2170 MHz
PTFB211501E
PTFB211501F
Data Sheet 7 of 13 Rev. 02, 2009-11-19
Reference Circuit (cont.)
* Gerber Files for this circuit available on request
Reference circuit assembly diagram (not to scale)*
C207
C202
C205
C210
C206
C209
C204
C208
C203
C201
PTFB211501EF (62)TMM4, .030
b211501 ef-v1_ CD_11 -18-2009
+
10 µF
+
10 µF
C803
S3
R802
C802
R801
R801
R803
C108
C102
R804
C104
C106
C101
C103
R101
C105
R103
C107
PTFB211501EF (62)TMM4, .030
R102
+
S1
S2
S3
VDD
VDD
VDD
+
10 µF
C801
PTFB211501E
PTFB211501F
Data Sheet 8 of 13 Rev. 02, 2009-11-19
Reference Circuit (cont.)
Circuit Assembly Information
DUT PTFB211501E or PTFB211501F LDMOS Transistor
PCB LTN/PTFB211501EF 0.76 mm [.030"] thick, εr = 4.5 TMM4 2 oz. copper
Component Description Suggested Manufacturer P/N
Input
C101, C102 Chip capacitor, 10 pF ATC 100B100JW500X
C103, C106 Chip capacitor, 0.01 µF ATC 200B103MW50X
C104 Chip capacitor, 1 µF Digi-Key 445-1411-2-ND
C105 Capacitor, 10 µF Digi-Key 399-1655-2-ND
C107, C108 Chip capacitor, 0.4 pF ATC 100B0R4CW500X
C801, C802, C803 Chip capacitor, 1000 pF Digi-Key PCC1772CT-ND
R101 Resistor, 5100 ΩDigi-Key P5.1KECT-ND
R102 Resistor, 2000 ΩDigi-Key P2.0KECT-ND
R103 Resistor, 10 ΩDigi-Key P10ECT-ND
R801 Resistor, 1300 ΩDigi-Key P1.3KECT-ND
R802 Resistor, 1200 ΩDigi-Key P1.2KECT-ND
R803, R804 Resistor, 1000 ΩDigi-Key P1.0KECT-ND
S1 Transistor Infineon Technologies BCP56
S2 Voltage regulator National Semiconductor LM7805
S3 Potentiometer, 2k ΩDigi-Key 3224W-202ECT-ND
Output
C201 Chip capacitor, 1.2 pF ATC 100B1R2CW500X
C202 Chip capacitor, 10 pF ATC 100B100JW500X
C203, C204 Chip capacitor, 1 µF Digi-Key 445-1411-2-ND
C205, C206 Chip capacitor, 0.02 µF ATC 200B203MW50X
C207, C208 Chip capacitor, 10 pF ATC 100B100JW500X
C209, C210 Capacitor, 10 µF Garrett Electronics TPSE106K050R0400
PTFB211501E
PTFB211501F
Data Sheet 9 of 13 Rev. 02, 2009-11-19
Reference Circuit (cont.)
Electrical Characteristics at 2170 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Input
TL101 0.041 λ, 40.30 ΩW1 = 2.032, W2 = 2.032, W3 = 3.048 W1 = 80, W2 = 80, W3 = 120
TL102 0.033 λ, 65.15 ΩW = 0.889, L = 2.540 W = 35, L = 100
TL103 0.027 λ, 65.15 ΩW1 = 0.889, W2 = 0.889, W3 = 2.032 W1 = 35, W2 = 35, W3 = 80
TL104 0.047 λ, 65.15 ΩW = 0.889, L = 3.556 W = 35, L = 140
TL105 0.000 λ, 40.30 ΩW = 2.032, L = 0.025 W = 80, L = 1
TL106, TL128 W = 0.889 W = 35
TL107 0.040 λ, 53.88 ΩW1 = 1.270, W2 = 1.270, W3 = 3.048 W1 = 50, W2 = 50, W3 = 120
TL108 0.089 λ, 20.46 ΩW1 = 5.080, W2 = 5.080, W3 = 6.350 W1 = 200, W2 = 200, W3 = 50
TL109, TL112 0.021 λ, 30.35 ΩW = 3.048, L = 1.524 W = 120, L = 60
TL110, TL111 0.035 λ, 30.35 ΩW1 = 3.048, W2 = 3.048, W3 = 2.540 W1 = 120, W2 = 120, W3 = 100
TL113 0.025 λ, 65.15 ΩW = 0.889, L = 1.905 W = 35, L = 75
TL114, TL115 0.012 λ, 46.07 ΩW = 1.651, L = 0.889 W = 65, L = 35
TL116 0.236 λ, 65.15 ΩW = 0.889, L = 18.034 W = 35, L = 710
TL117 W1 = 10.160, W2 = 17.780 W1 = 400, W2 = 700
TL118 0.186 λ, 50.98 ΩW = 1.397, L = 13.970 W = 55, L = 550
TL119, TL123 0.000 λ, 40.30 ΩW = 2.032, L = 0.025 W = 80, L = 1
TL120 0.014 λ, 40.30 ΩW = 2.032, L = 1.016 W = 80, L = 40
TL121 0.062 λ, 6.87 ΩW = 17.780, L = 4.191 W = 700, L = 165
TL122 0.020 λ, 11.38 ΩW = 10.160, L = 1.397 W = 400, L = 55
TL124, TL126 0.017 λ, 34.60 ΩW = 2.540, L = 1.270 W = 100, L = 50
TL125 0.155 λ, 40.30 ΩW = 2.032, L = 11.430 W = 80, L = 450
TL127 0.127 λ, 50.98 ΩW = 1.397, L = 9.525 W = 55, L = 375
TL129 0.013 λ, 6.87 ΩW1 = 17.780, W2 = 17.780, W3 = 0.889 W1 = 700, W2 = 700, W3 = 35
TL130 W1 = 2.032, W2 = 10.160 W1 = 80, W2 = 400
TL131 0.027 λ, 40.30 ΩW1 = 2.032, W2 = 2.032, W3 = 2.032 W1 = 80, W2 = 80, W3 = 80
TL132 W1 = 2.540, W2 = 2.032 W1 = 100, W2 = 80
TL133 W1 = 1.397, W2 = 2.540 W1 = 55, W2 = 100
TL134 0.027 λ,50.98 ΩW1 = 1.397, W2 = 1.397, W3 = 2.032 W1 = 55, W2 = 55, W3 = 80
PTFB211501E
PTFB211501F
Data Sheet 10 of 13 Rev. 02, 2009-11-19
Reference Circuit (cont.)
Electrical Characteristics at 2170 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Output
TL201 0.027 λ, 43.96 ΩW1 = 1.778, W2 = 1.778, W3 = 2.032 W1 = 70, W2 = 70, W3 = 80
TL202 (taper) 0.016 λ, 4.88 Ω / 5.86 ΩW1 = 25.654, W2 = 21.107, L = 1.041 W1 = 1010, W2 = 831, L = 41
TL203 (taper) 0.058 λ, 5.86 Ω / 32.33 ΩW1 = 21.107, W2 = 2.794, L = 3.937 W1 = 831, W2 = 110, L = 155
TL204 (taper) 0.017 λ, 32.33 Ω / 43.96 ΩW1 = 2.794, W2 = 1.778, L = 1.270 W1 = 110, W2 = 70, L = 50
TL205 W1 = 1.778, W2 = 2.540 W1 = 70, W2 = 100
TL206 W1 = 2.540, W2 = 1.397 W1 = 100, W2 = 55
TL207 0.000 λ, 4.88 ΩW = 25.654, L = 0.025 W = 1010, L = 1
TL208, TL209 0.089 λ, 53.88 ΩW = 1.270, L = 6.731 W = 50, L = 265
TL210 0.028 λ, 4.88 ΩW = 25.654, L = 1.905 W = 1010, L = 75
TL211, TL217, TL218 0.000 λ, 40.30 ΩW = 2.032, L = 0.025 W = 80, L = 1
TL212 0.089 λ, 43.96 ΩW = 1.778, L = 6.604 W = 70, L = 260
TL213, TL214 0.017 λ, 34.60 ΩW = 2.540, L = 1.270 W = 100, L = 50
TL215 0.378 λ, 50.98 ΩW = 1.397, L = 28.423 W = 55, L = 1119
TL216 W1 = 25.654, W2 = 1.270, W3 = 25.654, W1 = 1010, W2 = 50, W3 = 1010,
W4 = 1.270 W4 = 50
TL219, TL221 0.062 λ, 53.88 ΩW = 1.270, L = 4.699 W = 50, L = 185
TL220, TL242 0.065 λ, 30.35 ΩW = 3.048, L = 4.699 W = 120, L = 185
TL222, TL223 0.209 λ, 53.88 ΩW = 1.270, L = 15.748 W = 50, L = 620
TL224, TL225 W = 1.270 W = 50
TL226, TL235 W1 = 3.048, W2 = 9.144 W1 = 120, W2 = 360
TL227, TL228 0.073 λ, 12.48 ΩW1 = 9.144, W2 = 9.144, W3 = 5.080 W1 = 360, W2 = 360, W3 = 200
TL229, TL231 0.044 λ, 12.48 ΩW1 = 9.144, W2 = 9.144, W3 = 3.048 W1 = 360, W2 = 360, W3 = 120
TL230, TL232 0.037 λ, 12.48 ΩW1 = 9.144, W2 = 9.144, W3 = 2.540 W1 = 360, W2 = 360, W3 = 100
TL233, TL234 0.027 λ, 53.88 ΩW1 = 1.270, W2 = 1.270, W3 = 2.032 W1 = 50, W2 = 50, W3 = 80
TL236, TL237 W1 = 1.270, W2 = 3.048, W1 = 50, W2 = 120
TL238, TL239, 0.002 λ, 12.48 ΩW = 9.144, L = 0.127 W = 360, L = 5
TL240, TL241
PTFB211501E
PTFB211501F
Data Sheet 11 of 13 Rev. 02, 2009-11-19
Package Outline Specifications
Package H-36248-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain; S = source; G = gate.
5. Lead thickness: 0.102 +0.051/–0.025 [0.004 +0.002/–0.001].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max.
34.036
[1.340]
1.016
[.040]
2X 12.700
[.500]
27.940
[1.100]
L
C
D
G
S
C
L
FLANGE 9.779
[.385]
0.0381 [.0015] -A-
4X R1.524
[R.060]
2X R1.626
[R.064]
4.826±0.510
[.190±0.020]
45° X 2.720
[45° X .107]
19.431±0.510
[.765±0.020]
LID 9.398
+0.100
-0.150
[.370
+0.004
-0.006 ]
19.812±0.200
[.780±0.008]
3.632±0.380
SPH 1.575
[.062]
C66065-A2322-C001-01-0027_h-36248-2_11-11-09
C
L
PTFB211501E
PTFB211501F
Data Sheet 12 of 13 Rev. 02, 2009-11-19
Package Outline Specifications (cont.)
Package H-37248-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain; S = source; G = gate.
5. Lead thickness: 0.102 +0.051/–0.025 [0.004 +0.002/–0.001].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
S
1.016
[.040]
0.0381 [.0015] -A-
D
G
FLANGE 9.779
[.385]
SPH 1.575
[.062]
2X 12.700
[.500]
4X R0.508+.381
-.127
[R.020
+0.015
-0.005 ]
4.826±0.510
[.190±0.020]
LID 9.398+0.100
-0.150
[.370+0.004
-0.006 ]19.431±0.510
[.765±0.020]
19.812±0.200
[.780±0.008]
20.574
[.810]
3.632±0.380
[.143±0.015]
[45° X .107]
C66065-A2323-C001-01-0027_h-37248-2_11-11-09
L
C
Data Sheet 13 of 13 Rev. 02, 2009-11-19
PTFB211501E/F V4
Confidential, Limited Internal Distribution
Revision History: 2009-11-19 Data Sheet
Previous Version: 2009-07-27, Preliminary Data Sheet
Page Subjects (major changes since last revision)
All Data sheet reflects released product specifications
Edition 2009-11-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
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