© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 2 1Publication Order Number:
NSDEMN11XV6T1/D
NSDEMN11XV6T1,
NSDEMN11XV6T5
Common Cathode Quad
Array Switching Diode
This Common Cathode Epitaxial Planar Quad Diode is designed for
use in ultra high speed switching applications. This device is housed in
the SOT−563 package which is designed for low power surface mount
applications, where board space is at a premium.
Features
Fast trr
Low CD
Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Reverse Voltage VR80 Vdc
Peak Reverse Voltage VRM 80 Vdc
Forward Current IF100 mAdc
Peak Forward Current IFM 300 mAdc
Peak Forward Surge Current IFSM
(Note 1) 2.0 Adc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated) Symbol Max Unit
Total Device Dissipation @TA = 25°C
Derate above 25°C
PD357
(Note 2)
2.9
(Note 2)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient RJA 350
(Note 2) °C/W
Characteristic
(Both Junctions Heated) Symbol Max Unit
Total Device Dissipation @TA = 25°C
Derate above 25°C
PD500
(Note 2)
4.0
(Note 2)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient RJA 250
(Note 2) °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 S
2. FR−4 @ Minimum Pad
http://onsemi.com
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
(1)
(2)
(3)
(4) (5) (6)
Device Package Shipping
ORDERING INFORMATION
NSDEMN11XV6T1 SOT−563 4000/Tape & Ree
l
NSDEMN11XV6T5 SOT−563 8000/Tape & Ree
l
1
N9 M G
G
1
N9 = Specific Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
NSDEMN11XV6T5G SOT−563
(Pb−Free) 8000/Tape & Ree
l
NSDEMN11XV6T1G SOT−563
(Pb−Free) 4000/Tape & Ree
l
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
NSDEMN11XV6T1, NSDEMN11XV6T5
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current IRVR = 70 V 0.1 Adc
Forward Voltage VFIF = 100 mA 1.2 Vdc
Reverse Breakdown Voltage VRIR = 100 A80 Vdc
Diode Capacitance CDVR = 6.0 V, f = 1.0 MHz 3.5 pF
Reverse Recovery Time trr
(Note 3) IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR 4.0 ns
3. trr Test Circuit on following page.
TYPICAL ELECTRICAL CHARACTERISTICS
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
IF, FORWARD CURRENT (mA)
Figure 1. Forward Voltage Figure 2. Reverse Current
Figure 3. Diode Capacitance
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
IR, REVERSE CURRENT (μA)
TA = 85°C
TA = −40°C
TA = 25°C
1.0
0
0.9
0.8
0.7
0.6 2468
VR, REVERSE VOLTAGE (VOLTS)
CD, DIODE CAPACITANCE (pF)
NSDEMN11XV6T1, NSDEMN11XV6T5
http://onsemi.com
3
A
RL
trtp
t
10%
90%
VRtp = 2 s
tr = 0.35 ns
IF
trr
t
Irr = 0.1 IR
IF = 5.0 mA
VR = 6 V
RL = 100
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE
Figure 4. Reverse Recovery Time Test Circuit for the NSDEMN11XV6T1
NSDEMN11XV6T1, NSDEMN11XV6T5
http://onsemi.com
4
PACKAGE DIMENSIONS
HE
DIM MIN NOM MAX
MILLIMETERS
A0.50 0.55 0.60
b0.17 0.22 0.27
C
D1.50 1.60 1.70
E1.10 1.20 1.30
e0.5 BSC
L0.10 0.20 0.30
1.50 1.60 1.70
0.020 0.021 0.023
0.007 0.009 0.011
0.059 0.062 0.066
0.043 0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN NOM MAX
INCHES
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
eM
0.08 (0.003) X
b6 5 PL
A
C
−X−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
E
Y
12 3
45
L
6
1.35
0.0531
0.5
0.0197
ǒmm
inchesǓ
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
0.08 0.12 0.18 0.003 0.005 0.007
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Phone: 81−3−5773−3850
NSDEMN11XV6T1/D
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