SKM 200GB123D Absolute Maximum Ratings Symbol Conditions IGBT *6 &* &*9 :6 .< . . 3 14 84 5* 3 / .=69+.& > . Units /122 122 /82 022 ; 12 ' ?2 @@@ A /42 /14 + + 5* 1422 122 /02 022 + + /?42 + 1$2 /82 ?22 + + /822 + . 3 14 82 5* 3 / &( 3 /2 B @B .< 3 /42 5* Freewheeling diode &( &(9 . 3 14 82 5* 3 / &( SKM 200GB123D 3 /2 B @B .< 3 /42 5* SKM 200GAL123D Characteristics Symbol Conditions IGBT SKM 200GAR123D SKM 200GB123D1 Features Values +* / @ &( &(9 Trench IGBT Modules # Inverse diode SEMITRANSTM 3 . 3 14 5* ! " # $ % & ' # ( ) # *+ & " ,*- , * - . /0 12 Typical Applications # :6 &*6 *6 . *6 :6 3 *6 &* 3 $ + :6 3 2 *6 3 *6 .< 3 14 /14 5* .< 3 14 /14 5* :6 3 /4 .< 3 14 /14 5* *6 &* * * * *6 # :6 3 2 *6 3 14 # 3 / !F 9**GA66G @ ' .3 14 /14 5* . 3 14 5* min. ?4 3 /42 + :6 3 /4 ## max. Units 44 2/ /? /$ C00 /2 $4 20 /$ /8 D00 /1$$ + E 14 0/ 0 0C /2 /4 28 /0 1 /1 12 ( ( ( ! 112 /22 $22 C2 # 6 typ. 204 24 ** 3 $22 &* 3 /42 + 9: 3 9:## 3 4$ E .< 3 /14 5* :6 3 ; /4 # 6## E ?22 122 822 /22 1? /C H Inverse diode ( 3 6* . . &99 I &( 3 /42 +B :6 3 2 B .< 3 14 /14 5* .< 3 /14 5* .< 3 /14 5* &( 3 /42 +B .< 3 14 /14 5* J 3 /422 +JK 6 :6 3 1 /8 4 44 82 8 12 14 /1 C E + K* H FWD ( 3 6* . . &99 I &( 3 122 +B :6 3 2 .< 3 14 /14 5* .< 3 /14 5* .< 3 /14 5* &( 3 122 +B .< 3 14 /14 5* J 3 1222 +JK 6 :6 3 1 /8 0 82 /12 // 1D 14 /1 44 E + K* H Thermal characteristics 9 <' 9 <', 9 <'(, &:-. & , (M, 22D 214 2/8 LJM LJM LJM 9 ' 2208 LJM 4 4 014 Mechanical data GB GAL GAR N $ $ ? 1 09-03-2006 RAA 0 14 (c) by SEMIKRON SKM 200GB123D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 09-03-2006 RAA (c) by SEMIKRON SKM 200GB123D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 09-03-2006 RAA (c) by SEMIKRON SKM 200GB123D Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm , 4$ :- , 4$ :+ , 4$ :+9 * , 4$ This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 09-03-2006 RAA (c) by SEMIKRON