VUB116-16NOXT
3~ Rectifier Bridge + Brake Unit + NTC
Standard Rectifier Module
NTC
19+20
1
10+11
~6+7
~4+5
~2+3
8+9 18 17 21+22
12 13
Part number
VUB116-16NOXT
Backside: isolated
Features / Advantages: Applications: Package:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● NTC
● 3~ Rectifier with brake unit
for drive inverters
E2-Pack
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3600
RRM
1600
I120
FSM
700
DAV
V=V
A
A
=
=
I
3~
Rectifier
CES
1200
Brake
Chopper
I120
CE(sat)
1.8
C25
V=V
A
V
=
=
V
IXYS reserves the right to change limits, conditions and dimensions. 20120207bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
VUB116-16NOXT
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.19
R0.65 K/W
R
min.
120
V
RSM
V
100T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
105
P
tot
190 WT = 25°C
C
RK/W0.1
40
1600
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.64
T = 25°C
VJ
150
V
F0
V0.80T = °C
VJ
150
r
F
7.6 mΩ
V1.12T = °C
VJ
I = A
F
V
40
1.70
I = A
F
120
I = A
F
120
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1600
max. re pe titive reverse bl ocking vol tage T = 25°C
VJ
C
J
27
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
700
755
1.77
1.73
A
A
A
A
595
645
2.45
2.37
1600
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
IXYS reserves the right to change limits, conditions and dimensions. 20120207bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
VUB116-16NOXT
T = 125°C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current A
120
A
C
VJ
Symbol Definition
Ratings
typ. max.min.Conditions Unit
84
V
V
CE(sat)
total power dissipation 390 W
collector emitter leakage current
6.5 V
turn-on delay time 70 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient gate emitter voltage
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
225
±30
T = 125°C
T = 125°C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
CGE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
CGECE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current V = ±20 V
GE
2.1
2.1
6.05.5
mA
0.6 mA
0.2
500
G(on)
total gate charge V = V; V = 15 V; I = A
CE
Q
GE C
230 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
40 ns
250 ns
100 ns
6.8 mJ
8.3 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEK
1200
short circuit safe operating area
µs
SCSOA
10T = 125°C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
300 A
R
thJC
thermal resistance junction to case
0.15
K/W
V
RRM
V1200
max. repe titive reverse volt ag e T = 25°C
VJ
T = 25°C
forward current A
48
A
C
32
T = °C
C
I
F25
I
F
T = 25°C
forward voltage V
2.75
V
VJ
1.99T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current mA
0.25
mA
VJ
1T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
1.8 µC
23 A
150 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
-di /dt = A/µs
I = A
F
F
R
R
thJC
thermal resistance junction to case 0.9 K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = 125°C
VJ
VJ
75
3
75
75
30
30
10
10
10
600
900
400
600
I
CM
1.8
R
thCH
thermal resistance case to heatsink
0.32
K/W
0.3R
thCH
thermal resistance case to heatsink K/W
Brake IGBT
Brake Diode
600 V
80
80
80
80
nA
IXYS reserves the right to change limits, conditions and dimensions. 20120207bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
VUB116-16NOXT
Ratings
XXXXXXXXXX yywwx
Logo UL Part number Date Code
2D Data Matrix
Location
Package
T
VJ
°C
M
D
Nm6
mounting torque 3
T
stg
°C125
storage temperature -40
Weight g176
Symbol Definition typ. max.min.Conditions
virt ua l j un ction temperature
Unit
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6.0
12.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 200 A
per terminal
150-40
terminal to terminal
E2-Pack
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
0 25 50 75 100 125 150
102
103
104
105
R
[]
Typ. NTC resistance vs. temperature
TC[°C]
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUB116-16NOXT 510755Box 6VUB116-16NOXTStandard
3000
3600
ISOL
threshold voltage V0.8
mΩ
V
0 max
R
0 max
slope resistance * 4.5
1.1
17.9
1.31
8
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier Brake
IGBT
Brake
Diode
150 °C
* on die level
T = 25°
resistance kΩ
5.25
K
VJ
3375
R
25
B
25/50
5
4.75
temperature coefficient
Symbol Definition typ. max.min.Conditions Unit
Temperature Sensor NTC
IXYS reserves the right to change limits, conditions and dimensions. 20120207bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
VUB116-16NOXT
Dimmensions w/o tolerances
acc. DIN ISO 2768-T1-m
NTC
19+20
1
10+11
~6+7
~4+5
~2+3
8+9 18 17 21+22
12 13
Outlines E2-Pack
IXYS reserves the right to change limits, conditions and dimensions. 20120207bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
VUB116-16NOXT
0.001 0.01 0.1 1
200
300
400
500
600
23456789
1
100
1000
10000
0 1020304050
0
20
40
60
0 25 50 75 100 125 150 175
1 10 100 1000 10000
0.01
0.1
1
[A
2
s]
I
FSM
[A]
t[s]
P
tot
[W]
I
dAVM
[A] T
amb
[°C]
t[ms]
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
I
dAV
[A]
Z
thJC
[K/W]
50Hz, 80% V
RRM
T
VJ
= 150°C
0.00.51.01.52.0
0
40
80
120
160
I
F
[A]
V
F
[V]
T
VJ
= 45°C
T
VJ
=150°C
T
VJ
= 45°C
T
VJ
=125°C
T
VJ
= 25°C
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
t[ms]
Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current and ambient temperature
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature
Fig. 6 Transient thermal impedance junction to case
R
ii
0.085 0.012
0.041 0.007
0.309 0.036
0.215 0.102
T
VJ
=150°C
R
thA
:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20120207bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
VUB116-16NOXT
0123
0
25
50
75
100
125
150
04080120160
0
4
8
12
16
01234
0
25
50
75
100
125
150
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9V
11V
5678910111213
0
25
50
75
100
125
150
0 100 200 300
0
5
10
15
20
T
VJ
=125°C
13V
8 12162024
5
6
7
8
9
10
E
[mJ]
E
off
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
=15V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy
versus collector current
E
on
Fig. 6 Typ. switching energy
versus gate resistance
R
G
[ ]
E
[mJ]
I
C
[A]
E
off
V
GE
=15V
T
VJ
=25°C
T
VJ
=125°C
T
VJ
=25°C
T
VJ
=125°C
0.0001 0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
t[s]
Z
thJC
[K/W]
Fig. 7 Typ. transient thermal impedance junction to case
I
C
= 75A
V
CE
= 600 V
R
G
=10
V
CE
=600V
V
GE
= ±15 V
T
VJ
= 125°C
E
on
I
C
=75A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
Brake IGBT
IXYS reserves the right to change limits, conditions and dimensions. 20120207bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
VUB116-16NOXT
200 600 10000 400 800
120
140
160
180
200
220
11.010.0100.0
0.01
0.1
1
04080120160
0.0
0.5
1.0
1.5
2.0
0 200 400 600 800 1000
0
20
40
60
80
100
120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
200 600 10000 400 800
0
10
20
30
40
50
60
0001001
0
1
2
3
4
5
0123
0
10
20
30
40
50
60
70
80
K
f
T
VJ
[°C]
t[s]
V
FR
[V]
I
RM
[A]
Q
r
[μC]
I
F
[A]
V
F
id-]V[
F
/dt [A/μs]
t
rr
[ns]
Z
thJC
[K/W]
V
FR
t
rr
Fig. 1 Forward current I
F
vs. V
F
Fig. 2 Typ. reverse recovery charge
Q
r
versus -di
F
/dt
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
r
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal impedance junction to case
t
rr
[μs]
I
F
=60A
30 A
15 A
I
F
=60A
30 A
15 A
I
RM
Q
R
I
F
=60A
30 A
15 A
T
VJ
=125°C
V
R
=800V
T
VJ
=125°C
V
R
=800V
-di
F
/dt [A/μs]
T
VJ
=125°C
V
R
=800V
-di
F
/dt [A/μs] -di
F
/dt [A/μs]
T
VJ
=125°C
I
F
=30A
T
VJ
= 125°C
25°C
iR
iti
[K/W] [s]
1 0.465 0.0052
2 0.179 0.0003
3 0.256 0.0397
Brake Diode
IXYS reserves the right to change limits, conditions and dimensions. 20120207bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
