RGF1A-RGF1M
RGF1A-RGF1M, Rev. G
2001 Fairchild Semiconductor Corporation
RGF1A - RGF1M
Fast Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
Features
•Glass passivated junction.
•For surface mounted application.
•Low forward voltage drop.
•High current capability.
•Easy pick and place.
•High surge current capability. SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Symbol
Parameter
Device
Units
1A 1B 1D 1G 1J 1K 1M
VF Forward Voltage @ 1.0 A 1.3 V
trr Reverse Recovery Time
I
F = 0.5 A, IR = 1.0 A, Irr = 0. 25 A 150 250 500 ns
IR Reverse Current @ rated VR
TA = 25°C
TA = 125°C
5.0
100
µA
µA
CT Total Capacitance
V
R = 4.0 V, f = 1.0 MHz 8.5 pF
Symbol
Parameter
Value
Units
1A 1B 1D 1G 1J 1K 1M
VRRM Maximum Repetiti ve Reverse Voltage 50 100 200 400 600 800 1000 V
IF(AV) Average Rectified Forward Current,
@ TL = 125°C 1.0 A
IFSM Non-repetitive Peak Forward Surge
Current
8.3 ms Single Half-Si ne-Wave
30
A
Tstg Storage Temperature Range -65 to +175 °C
TJ Operating Junction Temperature -65 to +175 °C
Symbol
Parameter
Value
Units
PD Power Dissipation 1.76 W
RθJA Thermal Resistance, Junction to Ambient* 85 °C/W
RθJL T hermal Resistance, Junction to Lead* 28 °C/W
Thermal Characteristics
*Device mounted on FR-4 PCB 0.013 mm.
RGF1A-RGF1M, Rev. G
RGF1A-RGF1M
2001 Fairchild Semiconductor Corporation
Fast Rectifiers
(continued)
Typical Characteristics
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
0.01
0.1
1
10
20
Forward Voltage, VF [V]
Forward Current, IF [A]
Pulse Widt h = 300µ
µµ
µs
2% Duty Cycle
T = 2 5 C
º
A
T = 125 C
º
A
12 51020 50100
0
10
20
30
40
50
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
12 51020 50100
1
2
5
10
20
50
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
0 20406080100120140
0.01
0.1
1
10
30
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [mA]
T = 2 5 C
º
A
T = 100 C
º
A
T = 150 C
º
A
0 25 50 75 100 125 150 175
0
0.25
0.5
0.75
1
1.25
Ambient Temperature [ºC]
Average Rectified Forward Current, IF [A]
RESISTIVE O R
INDUCTIVE LOAD
P.C.B. MO UNTED
ON 0.2 x 0.2"
( 5 .0 x 5.0 m m )
COPPER PAD AREAS
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance
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Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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