TOSHIBA TLP621,TLP621-2,TLP621-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP621, TLP621-2, TLP621-4 PROGRAMMABLE CONTROLLER Unit in mm AC/DC -INPUT MODULE TIP - TLP621 SOLID STATE RELAY : ae The TOSHIBA TLP621, -2, and -4 consists of a photo-transistor jet 7828028 , optically coupled to a gallium arsenide infrared emitting diode. . oe The TLP621-2 offers two isolated channels in an eight lead Ee plastic DIP, which the TLP621-4 provides four isolated channels Paris = in a sixteen plastic DIP. wctcdes z TOSHIBA 11-5B2 Weight : 0.26 Collector-Emitter Voltage : 55V (Min.) @ Current Transfer Ratio : 50% (Min.) Rank GB : 100%(Min.) feaae TLP621-2 7eTt PIN CONFIGURATIONS (TOP VIEW) ososo2s 28] reasers TLP621 TLP621-2 TLP621-4 re Teh [axl Det onli = => o504f z ee -~ 2 iz cL 20 7 620 15 2.54 0.25 ai rasa | 1 : ANODE TOSHIBA 11-10C4 2 : CATHODE 30 n 3f 14 3 : EMITTER = = Weight : 0.54g 4 : COLLECTOR 40 hs 40 Lis Si ae TLP621-4 1,3 : ANODE S 2,4 : CATHODE a 12 \ : 5,7 : EMITTER = Tf Tie 6,8: COLLECTOR aa 19.82 = 0.25 # 7.62 + 0.2 => 0.5+01 | oz-sey a | 12%0.15|/5 7.85 ~ 8.80 80 9 2544025 a 1, 3,5,7 : ANODE 20k 2,4,6,8 : CATHODE 9.11,13,15 : EMITTER TOSHIBA 11-20A3 10,12, 14,16 : COLLECTOR Weight : 11g 961001EBC2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1998-03-04 1/9TOSHIBA TLP621,TLP621-2,TLP621-4 @ Current Transfer Ratio CURRENT TRANSFER RATIO CLASSI- (%) (Ig /Tp) TYPE FICATION MARKING OF 1 Ip=5mA, VoR=5V, Ta=25C CLASSIFICATION MIN. MAX. (None) 50 600 BLANK, Y, Y, G, G", B, B, GB Rank Y 50 150 y, y TLP621 Rank GR 100 300 G, G Rank BL 200 600 B, B Rank GB 100 600 G, G, B, B, GB TLP621-2 (None) 50 600 BLANK, GR, BL, GB TLP621-4 | Rank GB 100 600 GR, BL, GB *1 : Ex. Rank GB : TLP621 (GB) (Note) Application type name for certification test, please use standard product type name, 1.e. TLP621(GB) : TLP621 TLP621-2 (GB) : TLP621-2 MADE IN JAPAN MADE IN THAILAND UL Recognized E67349 *2 | E152349 *2 BSI Approved 6508, 7445 *3 |6505, 7445 *3 SEMKO Approved |9735090/01 *4 *2 UL1577 *3 BS EN60065 : 1994, BS EN60950 : 1992 *4 EN60950 (Approved is TLP621 only) 961001 EBC2" @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The products described in this document are subject to foreign exchange and foreign trade control laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-03-04 2/9TOSHIBA TLP621,TLP621-2,TLP621-4 @ Option (D4) type VDE Approved : DIN VDE0884 / 06.92, Certificate No. 68384 Maximum Operating Insulation Voltage : 890VpK Highest Permissible Over Voltage : 8000VpK (Note) When a VIDE0884 approved type is needed, please disignate the Option (D4) 7.62mm pich 10.16mm pich standard type | (LF2) type @ Creepage Distance : 6.4mm (Min.,) 8.0mm (Min) Clearance : 6.4mm (Min.) 8.0mm (Min) Insulation Thickness : 0.4mm (Min.) 0.4mm (Min) 1998-03-04 3/9TOSHIBA TLP621,TLP621-2,TLP621-4 MAXIMUM RATINGS (Ta = 25C) RATING CHARACTERISTIC SYMBOL rtp et TLP621-2 UNIT TLP621-4 Forward Current Ip 60 50 mA Forward Current Derating Alp /C -0.7(Ta>39C) | -0.5(Ta=25C) | mA/C a Pulse Forward Current Irp 1(100s pulse, 100pps) A fe Power Dissipation Pp 100 70 mW Power Dissipation Derating APp/C 1.0 0.7 mW /C Reverse Voltage VR 5 Vv Junction Temperature Tj 125 C Collector-Emitter Voltage VCEO 55 Vv me | Emitter-Collector Voltage VECO 7 Vv 2 Collector Current Ic 50 mA 5 OO Dissipation Po 150 100 mW 5 a Cheat, Tee sO Derating | APG/C ~1.5 1.0 mW /C Junction Temperature Tj 125 C Storage Temperature Range Tstg 55~125 C Operating Temperature Range Topr 55~100 C Lead Soldering Temperature Tso] 260 (10s) C Total Package Power Dissipation Pp 250 150 mW Cae oe Power Dissipation Derating AP C 95 15 mW /C Isolation Voltage (Note 1) BVs 5000 (AC, 1min., R.H.= 60%) Vrms (Note 1) Device considered a two terminal : LED side pins shorted together, and DETECTOR side pins shorted together. RECOMMENDED OPERATING CONDITIONS CHARACTERICTIC SYMBOL | MIN. TYP. MAX. UNIT Supply Voltage Vcc 5 24 Vv Forward Current Ip 16 20 mA Collector Current Ic 1 10 mA Operating Temperature Topr 25 85 C 1998-03-04 4/9TOSHIBA TLP621,TLP621-2,TLP621-4 INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT a Forward Voltage VE Ip=10mA 1.0 1.15 | 1.3 Vv A Reverse Current IR VR=5V 10 | A Capacitance Crp V=0, f=1MHz _ 30 _ pF Collector-Emitter Ic =0.5mA _ mw | Breakdown Voltage V (BR) CEO} 1c=0-5 8 Vv | Emitter-Collector a Breakdown Voltage V(BR) ECO) 'n=0.1mA a 7 7 Vv a VoRp=24V 10 | 100 A E | Collector Dark Current ICEO CE = ica) VcE=24V, Ta=85C 2 50 pA A Capacitance (Collector _ _ to Emitter) COE V=0, f=1MHz 10]; pF COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT = = 50 600 Current Transfer Ratio Ic/Ip Ip=5mA, CE op 100 600 %o = =0. _ 60 _ Saturated CTR Ic/Tp (sat) | P= CE OE m0 % Ic =2.4mA, Ip=8mA _ 0.4 Collector-Emitter Vv 02 Vv Saturation Voltage CE (sat) | I=0.2mA, - OB : an 0.4 ISOLATION CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Capacitance (Input to Output) Cs Vg=0, f=1MHz 0.8; pF Isolation Resistance Rg Vg =500V 1x1017)} 1044; QO AC, 1 minute 5000 ly Isolation Voltage BVs AC, 1 second, in oil |10000; | * DC, 1 minute, in oil |10000; Vde 1998-03-04 5/9TOSHIBA TLP621,TLP621-2,TLP621-4 SWITCHING CHARACTERISTICS (Ta = 25C) CHARACTERICTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Rise Time ty _ 2 Fall Time te Vcc=10V, Ic=2mA 3 5 Turn-on Time ton Ry, = 1000 3 x Turn-off Time toff 3 Turn-on Time ton . _ 2 _ 5 Ti t Ry =1.9kO (Fig.1) 15 5 torage Time S Voc=5V, Ip=16mA | # Turn-off Time tOFF _ 25 _ Fig.1 SWITCHING TIME TEST CIRCUIT Pf Lo rwwo Vics I t RL ts Yoo a Lo VeR VCE \\ 45 0.5V tON tOFF 1998-03-04 6/9TOSHIBA TLP621,TLP621-2,TLP621-4 TLP621-2 TLP621 Ir Ta TLP621-4 Ip - Ta 100 100 a 80 & 80 > D> oO 60 o 2 2 S34 S% Bad BE mS 40 m 40 EB is < < 20 = = gy 3 4 < -20 0 20 40 60 80 100 120 < 20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) TLP621-2 TLP621 Pc Ta TLP621-4 Pc Ta 240 120 a ee 200 E100 ne a 2 A a & 9 160 g 80 Be ge 3 3 120 86 60 is fa Be a5 < B 80 < A 40 3" 2 q 40 3 20 0 0 -20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) 2 > TLP621-2 g TLP621 Irp DR 4 TLP621-4 IrFp DR 3000 3000 oe PULSE WIDTHS 100 us B PULSE WIDTH= 100 ys Ta=25C = Ta = 25C E 1000 E 1000 5 500 @ 500 > 5 300 oD oO 3 a 2 fe = <= 100 z 5 - -_ g a wl a 5 10 4 10 3 10 3 107 3 107 3 10 3 107 3 107 3 107 3 10 DUTY CYCLE RATIO DR DUTY CYCLE RATIO DR 1998-03-04 7/9TOSHIBA TLP621,TLP621-2,TLP621-4 IF VF 100 50 30 ~ 10 i 5 : 3 3 1 Sos z . 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE VF (V) Ipp VFP 1000 PULSE WIDTH=10ys REPETITIVE FREQUENCY =100Hz Ta=25C 500 300 100 50 30 10 0 0.4 0.8 1.2 1.6 2.0 2.4 PULSE FORWARD CURRENT Ipp (mA) PULSE FORWARD VOLTAGE Vgp (V) Ic VCE Ta=25C \50mA 30mA 20mA N 15mA ~ P 10mA ~ C (MAX.) Ip=5mA COLLECTOR CURRENT Ic (mA) 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE Vcr (V) FORWARD VOLTAGE TEMPERATURE COEFFICIENT AV g/ATa (mV/C) DARK CURRENT Ip (A) COLLECTOR CURRENT Ic (mA) AVF/ATa IF 0.1 0.3 1 3 10 30 FORWARD CURRENT Ip (mA) Ip Ta 10 10V Vor=24V BV 10 190+ 10? 10 0 40 80 120 160 AMBIENT TEMPERATURE Ta (C) I VCE Ip=2mA 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 COLLECTOR-EMITTER VOLTAGE Vcr (V) 1998-03-04 8/9TOSHIBA TLP621,TLP621-2,TLP621-4 COLLECTOR CURRENT Ig (mA) COLLECTOR CURRENT Ic (mA) 100 50 30 10 0.5 0.3 0.1 0.05 0.03 0.3 100 50 oo Qo _ o ot w b oS 2 a 0.1 Ta= 20 Ic - IF 25C VcE=5V VcoE=0.4V SAMPLE A SAMPLE B 1 3 10 30 FOWARD CURRENT Ip (mA) Ic Ta 0 20 40 60 80 AMBIENT TEMPERATURE Ta (C) 100 100 CURRENT TRANSFER RATIO Ic/Ip (%) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (VY) SWITCHING TIME (yz) io o 0.16 0.12 0.08 0.04 1000 500 300 50 30 10 Ic /Ip IF SAMPLE A SAMPLE B Ta=25C VcE=5V VcE=0.4V 1 3 10 30 100 FOWARD CURRENT Ip (mA) VCE (sat) Ta -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) SWITCHINGTIME Ry, Ta =25C Ip=16mA Vec=5v 3 10 30 100 300 LOAD RESISTANCE Ry, (kQ) 1998-03-04 9/9