ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM
=
1200
V
IF
=
150
A
Doc. No. 5SYA 1684-01 Dez 12
Ultra low losses
Fast and soft reverse-recovery
Highly rugged SPT+ design
Passivation: Silicon Nitride plus Polyimide
Maximum rated values 1)
Parameter
Symbol
Conditions
min
max
Unit
Repetitive peak reverse voltage
VRRM
1200
V
Continuous forward current
IF
150
A
Repetitive peak forward current
IFRM
Limited by Tvjmax
300
A
Junction temperature
Tvj
175
°C
Tvj(op)
-40
150
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values 2)
Parameter
Symbol
Conditions
min
typ
max
Unit
Continuous forward voltage
VF
IF = 150 A
Tvj = 25 °C
1.8
V
Tvj = 125 °C
1.85
V
Continuous reverse current
IR
VR = 1200 V
Tvj = 25 °C
100
µA
Tvj = 125 °C
1.5
mA
Peak reverse recovery current
Irr
IF = 150 A,
VR = 600 V,
di/dt = 3200 A/µs,
L = 60 nH,
Inductive load,
Switch:
1x 5SMY 12M1280
Tvj = 25 °C
124
A
Tvj = 125 °C
164
A
Recovered charge
Qrr
Tvj = 25 °C
19.4
µC
Tvj = 125 °C
33
µC
Reverse recovery time
trr
Tvj = 25 °C
250
ns
Tvj = 125 °C
360
ns
Reverse recovery energy
Erec
Tvj = 25 °C
7.2
mJ
Tvj = 125 °C
15
mJ
2) Characteristic values according to IEC 60747 - 2
Diode-Die
5SLY 12J1200
5SLY 12J1200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1684-01 Dez 12 page 2 of 3
0
75
150
225
300
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF [V]
IF [A]
125 °C
25 °C
0
100
200
300
0150 300 450
IF [A]
Irr [A], Qrr [µC]
0
10
20
30
Erec [mJ]
Irr
Erec
Qrr
Vcc = 600 V
di/dt = 3200 A/µs
Tvj = 125 °C
Ls = 60 nH
Fig. 1
Typical diode forward characteristics
Fig. 2
Typical reverse recovery characteristics
vs. forward current
0
80
160
240
320
400
01000 2000 3000 4000 5000
di/dt [A/µs]
Irr [A], Qrr [µC]
0
4
8
12
16
20
Erec [mJ]
Irr
Erec
Qrr
VCC = 600 V
IF = 150 A
Tvj = 125 °C
Lσ = 60 nH
0
50
100
150
200
250
300
0200 400 600 800 1000 1200
VR [V]
IR [A]
VCC £ 1000 V
Tvj(op) = 150 °C
Lσ = 60 nH
Fig. 3
Typical reverse recovery vs. di/dt
Fig. 4
Safe operating area (FBSOA)
5SLY 12J1200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA 1684-01 Dez 12
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Mechanical properties
Parameter
Unit
Dimensions
Overall die
L x W
10 x 10
mm
exposed
front metal
L x W
8.3 x 8.3
mm
thickness
350 15
µm
Metallization 3)
front (A)
AlSi1
4
µm
back (K)
Al / Ti / Ni / Ag
1.2
µm
3) For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
Note : All dimensions are shown in mm
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
Related documents:
5SYA 2045 Thermal runaway during blocking
5SYA 2059 Applying IGBT and Diode dies
5SYA 2093-00 Thermal design of IGBT Modules
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