QS8J2 Datasheet -12V Pch + Pch Middle Power MOSFET l Outline TSMT8 VDSS -12V RDS(on)(Max.) 36m ID 4A PD 1.5W l Features l Inner circuit 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8) 5) Pb-free lead plating ; RoHS compliant l Packaging specifications Embossed Tape Packing l Application Switching Type Reel size (mm) 180 Tape width (mm) 8 Basic ordering unit (pcs) 3000 Taping code TR Marking J02 l Absolute maximum ratings (Ta = 25C) <It is the same ratings for the Tr1 and Tr2> Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage total Power dissipation Value Unit VDSS -12 V ID 4 A ID,pulse*1 12 A VGSS 10 V PD*2 element total Junction temperature Range of storage temperature www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. Symbol 1/11 1.5 1.25 W PD*3 0.7 Tj 150 Tstg -55 to +150 20150730 - Rev.002 QS8J2 Datasheet l Thermal resistance Parameter Symbol total Thermal resistance, junction - ambient element total RthJA*2 RthJA*3 Values Min. Typ. Max. - - 83.3 - - 100 - - 178 Unit /W l Electrical characteristics (T a = 25C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Drain - Source breakdown voltage Breakdown voltage temperature coefficient Conditions V(BR)DSS VGS = 0V, ID = -1mA V(BR)DSS ID = -1mA Values Unit Min. Typ. Max. -12 - - V - -21.9 - mV/ Tj referenced to 25 Zero gate voltage drain current IDSS VDS = -12V, VGS = 0V - - -1 A Gate - Source leakage current IGSS VDS = 0V, VGS = 10V - - 10 A Gate threshold voltage VGS(th) VDS = -6V, ID = -1mA -0.3 - -1.0 V - 2.4 - mV/ VGS = -4.5V, ID = -4A - 26 36 VGS = -2.5V, ID = -2A - 36 50 VGS = -1.8V, ID = -2A - 46 69 VGS = -1.5V, ID = -0.8A - 66 132 RG f = 1MHz, open drain - 15 - |Yfs| *4 VDS = -6V, ID = -4A 5.5 - - S Gate threshold voltage temperature coefficient Static drain - source on - state resistance Gate input resistance Forward Transfer Admittance www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. VGS(th) ID = -1mA Tj RDS(on)*4 referenced to 25 2/11 m 20150730 - Rev.002 QS8J2 Datasheet l Electrical characteristics (Ta = 25C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Conditions Values Min. Typ. Max. Input capacitance Ciss VGS = 0V - 1940 - Output capacitance Coss VDS = -6V - 260 - Reverse transfer capacitance Crss f = 1MHz - 240 - VDD -6V,VGS = -4.5V - 10 - tr*4 ID = -2A - 60 - td(off)*4 RL = 3 - 300 - RG = 10 - 180 - Turn - on delay time Rise time Turn - off delay time td(on)*4 tf*4 Fall time Unit pF ns l Gate charge characteristics (Ta = 25C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Conditions Values Min. Typ. Max. Total gate charge Qg*4 VDD -6V - 20 - Gate - Source charge Qgs*4 ID = -4A - 3.5 - Gate - Drain charge Qgd*4 VGS = -4.5V - 3.0 - Unit nC l Body diode electrical characteristics (Source-Drain) (Ta = 25C) <It is the same characteristics for the Tr1 and Tr2> Parameter Body diode continuous forward current Symbol Conditions IS Values Min. Typ. Max. - - -1 Ta = 25 Body diode pulse current ISP*1 Forward voltage VSD*4 VGS = 0V, IS = -4A Unit A - - -12 - - -1.2 V *1 Pw10s , Duty cycle1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (20x20x0.8mm) *4 Pulsed www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 3/11 20150730 - Rev.002 QS8J2 Datasheet l Electrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maximum Power dissipation www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 4/11 20150730 - Rev.002 QS8J2 Datasheet l Electrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) Fig.7 Breakdown Voltage vs. Junction Temperature Fig.8 Typical Transfer Characteristics www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 5/11 20150730 - Rev.002 QS8J2 Datasheet l Electrical characteristic curves Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Forward Transfer Admittance vs. Drain Current Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 6/11 20150730 - Rev.002 QS8J2 Datasheet l Electrical characteristic curves Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 7/11 Fig.14 Static Drain - Source On - State Resistance vs. Drain Current (I) 20150730 - Rev.002 QS8J2 Datasheet l Electrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Drain Current (II) Fig.16 Static Drain - Source On - State Resistance vs. Drain Current (lII) Fig.17 Static Drain - Source On - State Resistance vs. Drain Current (IV) Fig.18 Static Drain - Source On - State Resistance vs. Drain Current (V) www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 8/11 20150730 - Rev.002 QS8J2 Datasheet l Electrical characteristic curves Fig.19 Typical Capacitance vs. Drain - Source Voltage Fig.20 Switching Characteristics Fig.21 Dynamic Input Characteristics Fig.22 Source Current vs. Source Drain Voltage www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 9/11 20150730 - Rev.002 QS8J2 Datasheet l Measurement circuits <It is the same for the Tr1 and Tr2> Fig. 1-1 SWITCHING TIME MEASUREMENT CIRCUIT Fig. 1-2 SWITCHING WAVEFORMS Fig. 2-1 GATE CHARGE MEASUREMENT CIRCUIT Fig. 2-2 GATE CHARGE WAVEFORM l Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 10/11 20150730 - Rev.002 QS8J2 Datasheet l Dimensions www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 11/11 20150730 - Rev.002 Datasheet qs8j2 - Web Page Buy Distribution Inventory Part Number Package Unit Quantity Minimum Package Quantity Packing Type Constitution Materials List RoHS qs8j2 TSMT8 3000 3000 Taping inquiry Yes