7-3
Description
The HSCH-9161 is a discrete,
beam lead, GaAs diode fabricat-
ed using the modified barrier in-
tegrated diode (MBID) process.
Applications
This diode is suitable for medi-
um-low barrier, zero bias detec-
tor applications.The HSCH-9161
is functional through W-band
(110 GHz) and can be mounted in
microstrip, finline, and coplanar
circuits.
Assembly Techniques
Diodes are ESD sensitive. ESD
preventive measures must be em-
ployed in all aspects of storage,
handling, and assembly.
Diode ESD precautions, handling
considerations, and bonding
methods are critical factors in
successful diode performance
and reliability.
Agilent application note #55,
"Beam Lead Diode Bonding and
Handling Procedures" provides
basic information on these sub-
jects.
Additional References:
PN# 2, “HSCH-9161 Diode Mod-
el,” and PN# 12, “HSCH-9161
GaAs Detector Diode Sensitivity
Measurements.”
Agilent HSCH-9161
GaAs Detector Diode
Data Sheet
Note: All dimensions in microns or (mils).
231
(9.1)
250
(9.8)
231
(9.1)
250
(9.8)
120
(4.7)
Absolute Maximum Ratings
Symbol Parameters/Conditions Min. Typ. Max. Units
Top Operating Temp. Range -65 150 °C
Tstg Storage Temp.Range -65 200 °C
PBBurnout Power 20 dBm
Beam Lead = 7-9 µmDie Thickness = 50-60 µm
Features
•Low Junction Capacitance
•fc >200 GHz
•Lower Temperature
Coefficient than Silicon
•Durable Construction
- Typical 6 gram beam
lead strength
- High power handling
7-4 HSCH-9161/rev.3.2
Typical Small Signal Parameters as a
Function of Bias
Parameter Bias Voltage
-4.0V Zero Bias +0.1V +0.5V
Rs(Ω)20 20 20 20
Rj(Ω)440 3000 277 34
Cj(pF) 0.019 0.035 0.027 0.034
Note: Parameter values extracted from 26-40 GHz s-parameter data
@ -20 dBm.
Typical Diode IV Characteristic
Vf (volts)
25.0
-4.0 -3.0 -2.0 -1.0
20.0
15.0
10.0
5.0
0
-5.0
-10.0 1.00
Diode Parameter Variation with Temperature
Temp (oC)
16
RV (Kohm)
010 20 30
14
12
10
8
6
4
2
50400 60 70 80
1.0
GAMMA (mV/µW)
0.2
0.8
0.6
0.4
0
Rv - 3.0KΩ @ 25°C
Rv - 7.0KΩ @ 25°C
Note: Each line represents a different value of RV Temp (oC)
10 20 30 50400 60 70 80
0.300 nH
Rv = Rj + Rs
Rs
Rj
0.011 pF
Small Signal Model
GAMMA = 0.7 mV/µW @ 25°C
GAMMA = 0.5 mV/µW @ 25°C
or Gamma at room temperature.
Cj
If (mA)
DC measurement
assumes 50Ω RF
load; ideal diode
would be 1mV/µW.
This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of
circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local Agilent
Technologies’ sales representative.
DC Specifications/Physical Properties (TA = 25oC)
Part Number
Junction
Capacitance (pF) Video
Resistance (kΩ)Voltage Sensitivity
(mV/µW) Beam Lead
Strength
Typical Min. Max. Min. Typ. Mix. Unit
1GG5-4007 .035 2.5 7.5 0.5 3grams
1GG5-4009 .035 3.4 6.4 0.5 3grams
