October 2006
PF5103
N-Channel Switch
Features
• This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
•Sourced from process 51.
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are bas ed on a maxim um junction te mperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics*
* Minimum land pad.
Electrical Characteristics TC = 25°C unless otherwise noted
Off Characteristic s
On Characteristics
Small Signal Characteristics
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
VDG Drain-Gate Voltage 40 V
VGS Gate-Source Voltage -40 V
IGF Forward Gate Current 50 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Value Units
PDTotal Device Dissipation
Derate above 25°C625
5.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Test Condition MIN MAX Units
V(BR)GSS Gate-Source Breakdwon Voltage IG = -1.0µA, VDS = 0 -40 V
IGSS Gate Reverse Current VGS = -15V, VDS = 0
VGS = -15V, VDS = 0, Ta = 125oC-200
-500 pA
nA
VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 1.0nA -1.2 -2.7 V
VGS(f) Gate-Source Forward Voltage VDS = 0V, IG = 10mA 1.0 V
IDSS Zero-Gate Voltage Drain Current * VDS = 15V, VGS = 0 10 40 mA
gfs Forward Transfer conductance VDG = 15V, ID = 500uA, f = 1.0KHz
VDG = 15V, ID = 2.0mA, f = 1.0KHz 3500
7500 µmhos
µmhos
goss Output Conductance VDG = 15V, ID = 500uA, f = 1.0KHz 25 µmhos
Ciss Input Capacitance VDG = 15V, VGS = 0V, f = 1.0MHz 16 pF
Crss Reverse Transfer Capacitance VDG = 15V, VGS = 0V, f = 1.0MHz 6pF
1. Drain 2. Source 3. Gate
1 2 3
TO-92
Marking : PF5103