PF5103 tm N-Channel Switch Features * This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. * Sourced from process 51. TO-92 1 2 3 Marking : PF5103 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * Symbol Ta = 25C unless otherwise noted Parameter Value Units VDG Drain-Gate Voltage 40 V VGS Gate-Source Voltage -40 V IGF Forward Gate Current 50 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* Symbol Parameter Value Units PD Total Device Dissipation Derate above 25C 625 5.0 mW mW/C RJC Thermal Resistance, Junction to Case 125 C/W RJA Thermal Resistance, Junction to Ambient 357 C/W * Minimum land pad. Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Test Condition MIN MAX Units Off Characteristics V(BR)GSS Gate-Source Breakdwon Voltage IG = -1.0A, VDS = 0 IGSS Gate Reverse Current VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, Ta = 125oC VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 1.0nA VGS(f) Gate-Source Forward Voltage VDS = 0V, IG = 10mA -40 -1.2 V -200 -500 pA nA -2.7 V 1.0 V 40 mA On Characteristics IDSS Zero-Gate Voltage Drain Current * VDS = 15V, VGS = 0 10 Small Signal Characteristics mhos mhos gfs Forward Transfer conductance VDG = 15V, ID = 500uA, f = 1.0KHz VDG = 15V, ID = 2.0mA, f = 1.0KHz goss Output Conductance VDG = 15V, ID = 500uA, f = 1.0KHz 25 mhos Ciss Input Capacitance VDG = 15V, VGS = 0V, f = 1.0MHz 16 pF Crss Reverse Transfer Capacitance VDG = 15V, VGS = 0V, f = 1.0MHz 6 pF 3500 7500 * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% (c)2006 Fairchild Semiconductor Corporation PF5103 Rev. A 1 www.fairchildsemi.com PF5103 N-Channel Switch October 2006 Common Drain-Source - TRANSCONDUCTANCE (mmhos) - 0.4 V 6 - 0.6 V 4 - 1.0 V 2 - 1.4 V - 1.2 V 0 0 0.4 0.8 1.2 1.6 VDS - DRAIN-SOURCE VOLTAGE (V) g fs I D - 0.8 V 2 r DS 50 - DRAIN CURRENT (mA) 125C 25C - 55C V DS = 15 V I DSS _5 0.5 1 _ _ _ 2 5 - GATE CUTOFF VOLTAGE (V) VGS(off) = - 1.6 V 5 10 V DS = 15 V - 55C 25C 125C 12 8 VGS(off) = - 1.1 V 125C 25C - 55C 4 I I 0 0 -1 -2 -3 VGS - GATE-SOURCE VOLTAGE (V) 0 30 VGS(off) = - 3.0 V - 55C 25C 125C 20 VGS(off) = - 2.0 V - 55C 25C 125C 10 0 -1 -2 VGS - GATE-SOURCE VOLTAGE (V) g fs V DS = 15 V 0 -0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V) Transfer Characteristics - TRANSCONDUCTANCE (mmhos) Transfer Characteristics g fs - TRANSCONDUCTANCE (mmhos) _ 10 D D - DRAIN CURRENT (mA) VGS(off) = - 2.0 V 0 -3 2 PF5103 Rev. A I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ 1.0 mA, V GS = 0 V GS(off) @ V DS = 15V, I D = 1.0 nA Transfer Characteristics 25C 125C 10 20 fs 10 16 - 55C 20 g V GS (OFF) VGS(off) = - 3.0 V 30 50 20 Transfer Characteristics 40 100 - DRAIN "ON" RESISTANCE () - 0.2 V 8 100 DS T A = 25C TYP V GS(off) = - 2.0 V V GS = 0 V - DRAIN CURRENT (mA) Parameter Interactions r 10 30 V GS(off) = - 1.6 V - 55C 25C 125C 20 VGS(off) = - 1.1 V 10 - 55C 25C 125C V DS = 15 V 0 0 -0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V) www.fairchildsemi.com PF5103 N-Channel Switch Typical Characteristics PF5103 N-Channel Switch 100 - OUTPUT CONDUCTANCE ( mhos) Transconductance vs Drain Current TA = 25C V DG = 15V f = 1.0 kHz 10 V GS(off) = - 1.4V 1 0.1 1 I D - DRAIN CURRENT (mA) 100 os V GS(off) = - 3.0V Output Conductance vs Drain Current 10 T A = 25C 10 e n - NOISE VOLTAGE (nV / Hz) C is (C rs ) - CAPACITANCE (pF) C is (V DS = 20) C rs (V DS = 0) -4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V) 0.1 I D - DRAIN CURRENT (mA) Pd, Power Dissipation,[mW] 10 f = 10 kHz f = 100 kHz 10 3 PF5103 Rev. A P D - POWER DISSIPATION (mW) e n - NOISE VOLTAGE (nV / Hz) f = 10 Hz f = 100 Hz f = 1.0 kHz D 10 V DG = 15V 50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f 1.0 kHz 10 5 I D = 1.0 mA I D = 10 mA 1 10 f - FREQUENCY (kHz) 100 Power Dissipation vs Power Dissipation vs Ambient Temperature Ambient Temperature 800 V DG = 15V I 10V 15V 20V V GS(off) = - 0.85V 1 0.01 -20 100 0.1 1 - DRAIN CURRENT (mA) 20V V GS(off) = - 2.0V Noise Voltage vs Current 1 0.01 5.0V 10V 15V Noise Voltage vs Frequency C is (V DS = 0) 0 V GS(off) = - 5.0V 0.1 0.01 100 f = 0.1 - 1.0 MHz 1 5.0V 10V 15V 20V 1 Capacitance vs Voltage 100 10 V DG = 5.0V f = 1.0 kHz g g fs - TRANSCONDUCTANCE (mmhos) Typical Characteristics(continued) 700 600 600 TO-92 500 400 400 SOT-23 300 200 200 100 0 00 0 25 25 50 50 75 75 100 125 100 o Temperature, T C [( oC] TEMPERATURE C) 150 125 175 150 www.fairchildsemi.com PF5103 N-Channel Switch Typical Characteristics(continued) Switching Turn-Off Time vs Drain Current t d(OFF) ,t OFF - TURN-OFF TIME (ns) 25 V DD = 3.0V t r (ON) 20 t r APPROX. I D INDEPENDENT VGS(off) = 3.0V 15 T A = 25C I D = 6.6 mA 10 2.5 mA - 6.0V t d (ON) V GS = -12V 5 0 0 -2 -4 -6 -8 -10 V GS(off) - GATE-SOURCE CUTOFF VOLTAGE (V) On Resistance vs Drain Current 100 125C V GS(off) TYP = - 2.0V 50 25C 20 125C V GS(off) - 55C TYP = - 7.0V 25C r DS @ V GS = 0 - 55C 10 1 2 ID 5 10 20 - DRAIN CURRENT (mA) 50 100 4 PF5103 Rev. A 100 r DS - NORMALIZED RESISTANCE ( ) r DS - DRAIN "ON" RESISTANCE () t r(ON) ,t d(ON)- TURN-ON TIME (ns) Switching Turn-On Time vs Gate-Source Voltage T A = 25C VGS(off)= -2.2V 80 V DD = 3.0V V GS = -12V - 4.0V t (off) 60 - 7.5V V GS(off) INDEPENDENT 40 20 0 t d(off) DEVICE t d(off) 0 2 4 6 8 I D - DRAIN CURRENT (mA) 10 Normalized Drain Resistance vs Bias Voltage 100 50 20 10 V GS(off) @ 5.0V, 10 A r DS r DS = V GS 1 -________ V GS(off) 5 2 1 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) www.fairchildsemi.com PF5103 N-Channel Switch Package Dimensions TO-92 +0.25 4.58 0.20 4.58 -0.15 0.10 14.47 0.40 0.46 1.27TYP [1.27 0.20] 1.27TYP [1.27 0.20] 0.20 (0.25) +0.10 0.38 -0.05 1.02 0.10 3.86MAX 3.60 +0.10 0.38 -0.05 (R2.29) Dimensions in Millimeters 5 PF5103 Rev. A www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 6 PF5103 Rev. A www.fairchildsemi.com PF5103 N-Channel Switch TRADEMARKS