M29W640GL70NA6E - Micron - Product.Network

Parallel NOR Flash Embedded Memory

M29W640GH, M29W640GL

M29W640GT, M29W640GB

Features

• Supply voltage

– VCC = 2.7–3.6V (program, erase, read)

– VPP = 12V for fast program (optional)

• Asynchronous random/page read

– Page width: 4 words

– Page access: 25ns

– Random access: 60ns, 70ns, 90ns

• Fast program commands

– 2-word/4-byte program (without VPP = 12V)

– 4-word/8-byte program (with VPP = 12V)

– 16-word/32-byte write buffer

• Programming time

– 10µs per byte/word TYP

– Chip program time: 10 s (4-word program)

– Double word/quadruple byte program

• Memory organization

– M29W640GH/L 128 main blocks, 64KB each

– M29W640GT/B 127 main blocks, 64KB each and

8 boot blocks, 8KB each

• Program/erase controller

– Embedded byte/word program algorithms

• Program/erase suspend and resume

– Read from any block during a PROGRAM SUS-

PEND operation

– Read or program another block during an ERASE

SUSPEND operation

• Hardware block protection

– VPP/WP# pin for fast program and write protect

– Temporary block unprotect mode

• Common Flash interface

– 64-bit security code

• 128-word extended memory block

– Extra block used as security block or to store ad-

ditional information

• Low power consumption: Standby and automatic

mode

• 100,000 PROGRAM/ERASE cycles per block

• Electronic signature

– Manufacturer code: 0020h

• Device summary: part number and device code

– M29W640GH: uniform, last block protected by

VPP/WP#

– 227Eh + 220Ch + 2201h

– M29W640GL: uniform, first block protected by

VPP/WP#

– 227Eh + 220Ch + 2200h

– M29W640GT: top boot block

– 227Eh + 2210h + 2201h

– M29W640GB: bottom boot block

– 227Eh + 2210h + 2200h

• RoHS-compliant packages

– 48-pin TSOP (N/NA) 12mm x 20mm

– 56-pin TSOP (NB) 14mm x 20mm

– 48-ball TFBGA (ZA) 6mm x 8mm

– 64-ball FBGA (ZS) 11mm x 13mm

– 64-ball TBGA (ZF) 10mm x 13mm

• Automotive certified parts available

Part Numbering Information

Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory

content bits erased to 1. For available options, such as packages or speed, or for further information, contact your

Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification compari-

son by device type is available at www.micron.com/products. Contact the factory for devices not found.

Table 1: Part Number Information

Part Number

Category Category Details

Device Type M29 = Parallel Flash memory

64Mb: 3V Embedded Parallel NOR Flash

Features

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 1Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

Table 1: Part Number Information (Continued)

Part Number

Category Category Details

Operating Voltage W = 2.7 to 3.6V

Device Function 640G = 64Mb (x8/x16) boot block, uniform or boot block

Array Matrix T = Top boot

B = Bottom boot

L = First block protected by VPP/WP#

H = Last block protected by VPP/WP#

Speed 60 = 60ns (in conjunction with temperature range 6; denotes industrial grade –40°C to 85°C parts)

6A = 60ns (in conjunction with temperature range 6; denotes automotive grade –40°C to 85°C parts)

7A = 70ns (in conjunction with temperature range 6; denotes automotive grade –40°C to 85°C parts)

70 = 70ns (in conjunction with temperature range 6; denotes industrial grade –40°C to 85°C parts;

temperature range = 3 denotes automotive grade –40°C to 125°C parts)

90 = 90ns (in conjunction with temperature range 6; denotes industrial grade –40°C to 85°C parts)

Package N/NA = 48-pin TSOP, 12mm x 20mm

NB = 56-pin TSOP, 14mm x 20mm (available upon request)

ZA = 48-ball TFBGA, 6mm x 8mm, 0.8mm pitch

ZS = 64-ball FBGA, 11mm x 13mm, 1mm pitch

ZF = 64-ball TBGA, 10mm x 13mm, 1mm pitch (available upon request)

Temperature

Range

6 = –40°C to 85°C

3 = –40°C to 125°C (Automotive)

Shipping Options E = RoHS-compliant package, standard packing

F = RoHS-compliant package, tape and reel packing

64Mb: 3V Embedded Parallel NOR Flash

Features

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 2Micron Technology, Inc. reserves the right to change products or specifications without notice.

Contents

Important Notes and Warnings ......................................................................................................................... 7

General Description ......................................................................................................................................... 8

Signal Assignments ......................................................................................................................................... 11

Signal Descriptions ......................................................................................................................................... 15

Memory Organization .................................................................................................................................... 18

Memory Configuration ............................................................................................................................... 18

Uniform Block Memory Map, x16 – 64Mb Density ........................................................................................ 18

Uniform Block Memory Map, x8 – 64Mb Density ......................................................................................... 18

Bus Operations ............................................................................................................................................... 19

Read .......................................................................................................................................................... 19

Write .......................................................................................................................................................... 19

Standby and Automatic Standby ................................................................................................................. 19

Output Disable ........................................................................................................................................... 20

Status Register ................................................................................................................................................ 20

Data Polling Bit (DQ7) ................................................................................................................................ 20

Toggle Bit (DQ6) ......................................................................................................................................... 20

Error Bit (DQ5) ........................................................................................................................................... 20

Erase Timer Bit (DQ3) ................................................................................................................................. 21

Alternative Toggle Bit (DQ2) ........................................................................................................................ 21

Write to Buffer and Program Abort Bit (DQ1) ............................................................................................... 21

READ Operations ........................................................................................................................................... 24

READ/RESET Command ............................................................................................................................ 24

READ CFI Command .................................................................................................................................. 25

AUTO SELECT Operations .............................................................................................................................. 26

AUTO SELECT Command ........................................................................................................................... 26

Command Interface ....................................................................................................................................... 29

READ/RESET Command ............................................................................................................................ 29

AUTO SELECT Command ........................................................................................................................... 29

READ CFI QUERY Command ...................................................................................................................... 29

PROGRAM Command ................................................................................................................................ 30

PROGRAM SUSPEND Command ................................................................................................................ 30

PROGRAM RESUME Command .................................................................................................................. 31

Fast Program Commands ............................................................................................................................ 31

DOUBLE BYTE PROGRAM Command ......................................................................................................... 31

QUADRUPLE BYTE PROGRAM Command .................................................................................................. 31

OCTUPLE BYTE PROGRAM Command ....................................................................................................... 31

DOUBLE WORD PROGRAM Command ....................................................................................................... 32

QUADRUPLE WORD PROGRAM Command ................................................................................................ 32

WRITE TO BUFFER AND PROGRAM Command .......................................................................................... 33

WRITE TO BUFFER AND PROGRAM CONFIRM Command .......................................................................... 34

WRITE TO BUFFER AND PROGRAM ABORT AND RESET Command ............................................................ 34

UNLOCK BYPASS Command ...................................................................................................................... 34

UNLOCK BYPASS PROGRAM Command ..................................................................................................... 34

UNLOCK BYPASS RESET Command ............................................................................................................ 35

CHIP ERASE Command .............................................................................................................................. 35

BLOCK ERASE Command ........................................................................................................................... 35

ERASE SUSPEND Command ....................................................................................................................... 36

ERASE RESUME Command ........................................................................................................................ 36

ENTER EXTENDED BLOCK Command ....................................................................................................... 36

EXIT EXTENDED BLOCK Command ........................................................................................................... 36

64Mb: 3V Embedded Parallel NOR Flash

Features

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 3Micron Technology, Inc. reserves the right to change products or specifications without notice.

BLOCK PROTECT and CHIP UNPROTECT Commands ................................................................................ 37

BLOCK PROTECT Command ...................................................................................................................... 37

Programmer Technique .............................................................................................................................. 37

In-System Technique .................................................................................................................................. 40

Common Flash Interface ................................................................................................................................ 47

Absolute Ratings and Operating Conditions ..................................................................................................... 52

DC Characteristics .......................................................................................................................................... 54

Read AC Characteristics .................................................................................................................................. 55

Write AC Characteristics ................................................................................................................................. 58

Toggle and Alternative Toggle AC Characteristics ............................................................................................. 62

Program/Erase Characteristics ........................................................................................................................ 64

Reset Characteristics ...................................................................................................................................... 68

Package Dimensions ....................................................................................................................................... 69

Revision History ............................................................................................................................................. 74

Rev. E – 2/18 ............................................................................................................................................... 74

Rev. D – 03/15 ............................................................................................................................................. 74

Rev. C – 07/13 ............................................................................................................................................. 74

Rev. B – 06/13 ............................................................................................................................................. 74

Rev. A – 11/12 ............................................................................................................................................. 74

64Mb: 3V Embedded Parallel NOR Flash

Features

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 4Micron Technology, Inc. reserves the right to change products or specifications without notice.

List of Figures

Figure 1: Logic Diagram ................................................................................................................................... 9

Figure 2: 48-Pin TSOP .................................................................................................................................... 11

Figure 3: 56-Pin TSOP .................................................................................................................................... 12

Figure 4: 48-Ball TFBGA ................................................................................................................................. 13

Figure 5: 64-Ball TFBGA ................................................................................................................................. 14

Figure 6: Data Polling Flowchart .................................................................................................................... 23

Figure 7: Data Toggle Flowchart ..................................................................................................................... 24

Figure 8: Programmer Equipment Block Protect Flowchart ............................................................................. 38

Figure 9: Programmer Equipment Chip Unprotect Flowchart .......................................................................... 39

Figure 10: In-System Equipment Block Protect Flowchart ............................................................................... 41

Figure 11: In-System Equipment Chip Protect Flowchart ................................................................................ 42

Figure 12: AC Measurement Load Circuit ....................................................................................................... 53

Figure 13: AC Measurement I/O Waveform ..................................................................................................... 53

Figure 14: Random AC Timing ....................................................................................................................... 56

Figure 15: Page Read AC Timing ..................................................................................................................... 57

Figure 16: WE#-Controlled AC Timing ............................................................................................................ 59

Figure 17: CE#-Controlled AC Timing ............................................................................................................. 61

Figure 18: Toggle/Alternative Toggle, CE# Controlled ...................................................................................... 62

Figure 19: Toggle/Alternative Toggle, OE# Controlled ...................................................................................... 63

Figure 20: WE# Controlled Program Waveform ............................................................................................... 65

Figure 21: CE# Controlled Program Waveform ................................................................................................ 66

Figure 22: Chip/Block Erase Waveform .......................................................................................................... 67

Figure 23: Reset/Block Temporary Unprotect AC Waveforms ........................................................................... 68

Figure 24: Accelerated Programming Timing Waveform .................................................................................. 68

Figure 25: 48-Pin TSOP – 12mm x 20mm ........................................................................................................ 69

Figure 26: 56-Pin TSOP – 14mm x 20mm ........................................................................................................ 70

Figure 27: 48-Ball TFBGA – 6mm x 8mm ......................................................................................................... 71

Figure 28: 64-Ball TBGA – 10mm x 13mm ....................................................................................................... 72

Figure 29: 64-Ball FBGA – 11mm x 13mm ....................................................................................................... 73

64Mb: 3V Embedded Parallel NOR Flash

Features

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 5Micron Technology, Inc. reserves the right to change products or specifications without notice.

List of Tables

Table 1: Part Number Information ................................................................................................................... 1

Table 2: Signal Names ...................................................................................................................................... 9

Table 3: Protection Granularity on the M29W640GH and M29W640GL .............................................................. 9

Table 4: Protection Granularity on the M29W640GT ....................................................................................... 10

Table 5: Protection Granularity on the M29W640GB ....................................................................................... 10

Table 6: Signal Descriptions ........................................................................................................................... 15

Table 7: Hardware Protection ......................................................................................................................... 17

Table 8: x16 Uniform Blocks [127:0] ................................................................................................................ 18

Table 9: x8 Uniform Blocks [127:0] ................................................................................................................. 18

Table 10: Bus Operations ............................................................................................................................... 19

Table 11: Status Register Bits .......................................................................................................................... 21

Table 12: Read Electronic Signature ............................................................................................................... 26

Table 13: Block Protection ............................................................................................................................. 27

Table 14: Programmer Technique Bus Operations ........................................................................................... 40

Table 15: Commands – 16-Bit Mode (BYTE# = VIH) .......................................................................................... 43

Table 16: Commands – 8-Bit Mode (BYTE# = VIL) ............................................................................................ 45

Table 17: Query Structure Overview ............................................................................................................... 47

Table 18: CFI Query Identification String ........................................................................................................ 47

Table 19: CFI Query System Interface Information .......................................................................................... 48

Table 20: Device Geometry Definition ............................................................................................................ 48

Table 21: Primary Algorithm-Specific Extended Query Table ........................................................................... 49

Table 22: Security Code Area .......................................................................................................................... 51

Table 23: Absolute Maximum/Minimum Ratings ............................................................................................ 52

Table 24: Operating Conditions ...................................................................................................................... 52

Table 25: Input/Output Capacitance .............................................................................................................. 53

Table 26: DC Current Characteristics .............................................................................................................. 54

Table 27: DC Voltage Characteristics .............................................................................................................. 54

Table 28: Read AC Characteristics .................................................................................................................. 55

Table 29: WE#-Controlled Write AC Characteristics ......................................................................................... 58

Table 30: CE#-Controlled Write AC Characteristics ......................................................................................... 60

Table 31: Toggle and Alternative Toggle AC Characteristics .............................................................................. 62

Table 32: Program/Erase Times and Endurance Cycles ................................................................................... 64

Table 33: Reset/Block Temporary Unprotect AC Characteristics ...................................................................... 68

64Mb: 3V Embedded Parallel NOR Flash

Features

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 6Micron Technology, Inc. reserves the right to change products or specifications without notice.

Important Notes and Warnings

Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document,

including without limitation specifications and product descriptions. This document supersedes and replaces all

information supplied prior to the publication hereof. You may not rely on any information set forth in this docu-

ment if you obtain the product described herein from any unauthorized distributor or other source not authorized

by Micron.

Automotive Applications. Products are not designed or intended for use in automotive applications unless specifi-

cally designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distrib-

utor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims,

costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of

product liability, personal injury, death, or property damage resulting directly or indirectly from any use of non-

automotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and con-

ditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron

products are not designed or intended for use in automotive applications unless specifically designated by Micron

as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to in-

demnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys'

fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage

resulting from any use of non-automotive-grade products in automotive applications.

Critical Applications. Products are not authorized for use in applications in which failure of the Micron compo-

nent could result, directly or indirectly in death, personal injury, or severe property or environmental damage

("Critical Applications"). Customer must protect against death, personal injury, and severe property and environ-

mental damage by incorporating safety design measures into customer's applications to ensure that failure of the

Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron

component for any critical application, customer and distributor shall indemnify and hold harmless Micron and

its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims,

costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of

product liability, personal injury, or death arising in any way out of such critical application, whether or not Mi-

cron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the

Micron product.

Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems,

applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAIL-

URE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE

WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR

PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included

in customer's applications and products to eliminate the risk that personal injury, death, or severe property or en-

vironmental damages will result from failure of any semiconductor component.

Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential

damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such damages are based on tort, warranty,

breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly

authorized representative.

64Mb: 3V Embedded Parallel NOR Flash

Important Notes and Warnings

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 7Micron Technology, Inc. reserves the right to change products or specifications without notice.

General Description

The M29W640G is a 64Mb (8Mb x8 or 4Mb x16) nonvolatile memory that can be read,

erased, and reprogrammed. These operations can be performed using a single low volt-

age (2.7–3.6V) supply. Upon power-up, the device defaults to read mode.

The memory is divided into blocks that can be erased independently so that valid data

can be preserved while old data is erased. PROGRAM and ERASE commands are written

to the command interface of the memory. An on-chip program/erase controller simpli-

fies the process of programming or erasing the memory by taking care of all special op-

erations required to update the memory contents. The end of a PROGRAM or ERASE

operation can be detected and any error condition can be identified. The command set

required to control the device is consistent with JEDEC standards.

The M29W640GH and M29W640GL memory array is organized into 128 uniform blocks

of 64KB each (or 32Kwords each).

The M29W640GT and M29W640GB feature an asymmetric memory block, each having

an array of 135 blocks divided into 8 parameter blocks of 8KB each (or 4 Kwords each),

and 127 main blocks of 64KB each (or 32Kwords each). The M29W640GT has the pa-

rameter blocks at the top of the memory array whereas the M29W640GB locates the pa-

rameter blocks starting from the bottom.

Blocks are protected by groups to prevent accidental PROGRAM or ERASE commands

from modifying the memory.

The M29W640G supports asynchronous random read and page read from all blocks of

the array. Chip enable, output enable, and write enable signals control the bus opera-

tion. They enable simple connection to most microprocessors, often without additional

logic.

The VPP/WP# signal is used to enable faster programming of the device. Protection from

PROGRAM/ERASE commands can be obtained by holding VPP/WP# to VSS:

• On the M29W640GH and M29W640GL, the last and first blocks are protected.

• On the M29W640GT and M29W640GB, the last two and first two boot blocks are pro-

tected.

The M29W640G devices feature a full set of fast program commands to improve pro-

gramming throughput:

• 2-byte PROGRAM (it is not necessary to raise VPP/WP# to 12V before issuing this com-

mand)

• 2 words/4-byte PROGRAM (it is not necessary to raise VPP/WP# to 12V before issuing

this command)

• 4 word/8-byte PROGRAM (VPP/WP# must be raised to 12V before issuing this com-

mand)

• WRITE TO BUFFER and PROGRAM (enables program in one shot a buffer of 16

words/32 bytes)

The M29W640G has an extra block, the extended block, of 128 words in x16 mode or 256

bytes in x8 mode that can be accessed using a dedicated command. The extended block

can be protected, and therefore, is useful for storing security information. However,

protection is not reversible; once protected, the protection cannot be undone.

The memory is delivered with all bits erased (set to 1).

64Mb: 3V Embedded Parallel NOR Flash

General Description

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 8Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 1: Logic Diagram

VCC

A[21:0]

VPP/WP#

DQ[14:0]

DQ15/A-1

VSS

WE#

CE#

OE#

RST#

RY/BY#

BYTE#

Table 2: Signal Names

Name Description Direction

A0-A21 Address inputs Inputs

CE# Chip enable Input

OE# Output enable Input

WE# Write enable Input

RP# Reset/Block temporary unprotect Input

RY/BY# Ready/Busy Input

BYTE# Byte/Word organization select Input

DQ0–DQ7 Data input/outputs I/O

DQ8–DQ14 Data input/outputs I/O

DQ15A-1 (or DQ15) Data input/output or address input (or data I/O) I/O

VCC Supply voltage Supply voltage

VPP/WP# Supply voltage for FAST PROGRAM (optional) or WRITE

PROTECT command

Supply voltage

VSS Ground –

NC Not connected internally –

Note: 1. VPP/WP# may be left floating because it is internally connected to a pull-up resistor to

enable PROGRAM/ERASE commands.

Table 3: Protection Granularity on the M29W640GH and M29W640GL

Block KB/Kwords Protection Block Group (x8) (x16)

0 to 3 4 x 64/32 Block level 000000h-03FFFFh1000000h-01FFFFh1

64Mb: 3V Embedded Parallel NOR Flash

General Description

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 9Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 3: Protection Granularity on the M29W640GH and M29W640GL (Continued)

Block KB/Kwords Protection Block Group (x8) (x16)

4 to 7 4 x 64/32 Protection group 040000h-07FFFFh 020000h-03FFFFh

– – – – –

120 to 123 4 x 64/32 Protection group 780000h-7BFFFFh 3C0000h-3DFFFFh

124 to 127 4 x 64/32 Block level 7C0000h-7FFFFFh 3E0000h-3FFFFFh

Note: 1. Used as the extended block addresses in extended block mode.

Table 4: Protection Granularity on the M29W640GT

Block KB/Kwords Protection Block Group (x8) (x16)

0 to 3 4 x 64/32 Protection group 000000h-03FFFFh1000000h-01FFFFh1

4 to 7 4 x 64/32 Protection group 040000h-07FFFFh 020000h-03FFFFh

– – – – –

120 to 123 4 x 64/32 Protection group 780000h-7BFFFFh 3C0000h-3DFFFFh

124 to 126 3 x 64/32 Protection group 7C0000h-7EFFFFh 3E0000h-3F7FFFh

127 to 134 8 x 8/42Block level 7F0000h-7FFFFFh 3F8000h-3FFFFFh

Notes: 1. Used as the extended block addresses in extended block mode.

2. Boot blocks.

Table 5: Protection Granularity on the M29W640GB

Block KB/Kwords Protection Block Group (x8) (x16)

0 to 7 8x 8/41Block level 000000h-00FFFFh2000000h-007FFFh2

8 to 10 3 x 64/32 Protection group 010000h-03FFFFh 008000h-01FFFFh

11 to 14 4 x 64/32 Protection group 040000h-07FFFFh 020000h-03FFFFh

– – – – –

127 to 130 4 x 64/32 Protection group 780000h-7BFFFFh 3C0000h-3DFFFFh

131 to 134 4 x 64/32 Protection group 7C0000h-7FFFFFh 3E0000h-3FFFFFh

Notes: 1. Boot blocks.

2. Used as the extended block addresses in extended block mode.

64Mb: 3V Embedded Parallel NOR Flash

General Description

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Signal Assignments

Figure 2: 48-Pin TSOP

A15

A14

A13

A12

A11

A10

A19

A20

WE#

RST#

A21

VPP/WP#

RY/BY#

A18

A17

A16

BYTE#

VSS

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

VCC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

VSS

CE#

Note: 1. RFU = reserved for future use.

64Mb: 3V Embedded Parallel NOR Flash

Signal Assignments

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 3: 56-Pin TSOP

RFU

A15

A14

A13

A12

A11

A10

A19

A20

WE#

RST#

A21

VPP/WP#

RY/BY#

A18

A17

RFU

A16

BYTE#

VSS

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

VCC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

VSS

CE#

RFU

VCC

Note: 1. RFU = reserved for future use.

64Mb: 3V Embedded Parallel NOR Flash

Signal Assignments

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 4: 48-Ball TFBGA

CE#

OE#

VSS

CE#

OE#

VSS

A17

RY/BY#

VPP/WP#

A18

A20

D10

D11

RY/BY#

VPP/WP#

A18

A20

D10

D11

WE#

RST#

A21

A19

D12

VCC

WE#

RST#

A21

A19

D12

VCC

A10

A11

D14

D13

A10

A11

D14

D13

A13

A12

A14

A15

A16

BYTE#

D15/A-1

VSS

A13

A12

A14

A15

A16

BYTE#

D15/A-1

VSS

Top view – ball side down Bottom view – ball side up

Note: 1. RFU = reserved for future use.

64Mb: 3V Embedded Parallel NOR Flash

Signal Assignments

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 5: 64-Ball TFBGA

RFU

VCC1

RFU

VCC1

RFU

CE#

OE#

VSS

CE#

OE#

VSS

A17

RY/BY#

VPP/WP#

A18

A20

D10

D11

RY/BY#

VPP/WP#

A18

A20

D10

D11

WE#

RST#

A21

A19

D12

VCC

WE#

RST#

A21

A19

D12

VCC

A10

A11

D14

D13

A10

A11

D14

D13

A13

A12

A14

A15

A16

BYTE#

D15/A-1

VSS

A13

A12

A14

A15

A16

BYTE#

D15/A-1

VSS

RFU

VCC1

VSS

RFU

VCC1

VSS

RFU

Top view – ball side down Bottom view – ball side up

Notes: 1. RFU = reserved for future use.

2. Pads D8 and F1 are connected on the M29W640GT and M29W640GB devices.

64Mb: 3V Embedded Parallel NOR Flash

Signal Assignments

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Signal Descriptions

The following table is a comprehensive list of signals for this device family. All signals

listed may not be supported on this device. See Signal Assignments for information spe-

cific to this device.

Table 6: Signal Descriptions

Name Type Description

A[MAX:0] Input Address: Select the cells in the memory array to access during bus READ operations. During

bus WRITE operations they control the commands sent to the command interface of the pro-

gram/erase controller.

CE# Input Chip enable: Activates the memory, allowing bus READ and bus WRTE operations to be per-

formed. When CE# is HIGH, all other pins are ignored.

OE# Input Output enable: Controls the bus READ operation of the memory.

WE# Input Write enable: Controls the bus WRITE operation of the memory’s command interface.

VPP/WP# Input VPP/WP#: Provides two functions: VPP enables the memory to use an external high-voltage

power supply to reduce the time required for UNLOCK BYPASS PROGRAM operations. WP#

performs hardware protection by protection the last block at the end of the addressable area

(M29W640GH) or the first block at the beginning of the addressable area (M29W640GL). It

protects the last two blocks at the end of the addressable area (M29W640GT) and the first

two boot blocks at the beginning of the addressable area (M29W640GB).

VPP/WP# may be left floating or unconnected (see DC Characteristics). When VPP/WP# is LOW,

the last or first block in the M29W640GH and M29W640GL, respectively, and the last or first

two blocks in the M29W640GT and M29W640GB, respectively, are protected. PROGRAM and

ERASE operations in this block are ignored while VPP/WP# is LOW, even when RST# is at VID.

When VPP/WP# is HIGH, VIH, the device reverts to the previous protection status of the outer-

most blocks. PROGRAM and ERASE operations can now modify the data in the outermost

blocks unless the block is protected using block protection.

Applying 12V to VPP/WP# will temporarily unprotect any block previously protected (includ-

ing the outermost blocks) using a high-voltage block protection technique (in-system or pro-

grammer technique). (See Hardware Protection for details. When VPP/WP# is raised to VPP,

the device automatically enters the unlock bypass mode. When VPP/WP# returns to VIH or VIL,

normal operation resumes. During UNLOCK BYPASS PROGRAM operations, the device draws

IPP from the pin to supply the programming circuits. (See UNLOCK BYPASS Command.) The

transitions from VIH to VPP and from VPP to VIH must be slower than tVHVPP (See the Acceler-

ated Program Timing waveforms).

Never raise VPP/WP# to VPP from any mode except read mode; otherwise, the device may be

left in an indeterminate state.

A 0.1µF capacitor should be connected between VPP/WP# and the VSS ground pin to decouple

the current surges from the power supply. The PCB track widths must be sufficient to carry

the currents required during an UNLOCK BYPASS PROGRAM operation, IPP.

64Mb: 3V Embedded Parallel NOR Flash

Signal Descriptions

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 15 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 6: Signal Descriptions (Continued)

Name Type Description

DQ15/A-1 I/O Data I/O or address input: When HIGH, behaves as a data I/O pin (as DQ8–DQ14). When

LOW, behaves as an address pin; DQ15A–1 LOW will select the LSB of the addressed word;

DQ15A–1 HIGH will select the MSB.

Throughout the text, consider references to the data I/O to include this pin when BYTE# is

HIGH and references to the address inputs to include this pin when BYTE# is LOW, except

when stated explicitly otherwise.

RST# Input Reset/Block temporary unprotect: Applies a hardware reset to the memory or temporarily

unprotect all blocks that have been protected.

Note that if VPP/WP is at VIL, then the last and the first block in the M29W640GH and

M29W640GL, respectively, and the last two and first two blocks in the M29W640GT and

M29W640GB, respectively, will remain protected, even if RST# is at VID.

A hardware reset is achieved by holding RST# LOW for at least tPLPX. After RST# goes HIGH,

the memory will be ready for bus READ and bus WRITE operations after tPHEL or tRHEL,

whichever occurs last. (See Reset Characteristics for more details.)

Holding RST# at VID will temporarily unprotect the protected blocks in the memory. PRO-

GRAM and ERASE operations on all blocks will be possible. The transition from VIH to VID

must be slower than tPHPHH.

DQ[14:8] I/O Data I/O: Outputs the data stored at the selected address during a bus READ operation

when BYTE# is HIGH. When BYTE# is LOW, these pins are not used and are High-Z. During

bus WRITE operations, the command register does not use these bits. When reading the sta-

tus register these bits should be ignored.

DQ[7:0] I/O Data I/O: Outputs the data stored at the selected address during a bus READ operation. Dur-

ing bus WRITE operations, they represent the commands sent to the command interface of

the program/erase controller.

RY/BY# Output Ready busy: Open-drain output that identifies when the device is performing a PROGRAM

or ERASE operation. During PROGRAM or ERASE operations, RY/BY# is LOW, and is High-Z

during read mode, auto select mode, and erase suspend mode.

After a hardware reset, bus READ and WRITE operations cannot begin until RY/BY# becomes

High-Z. (See Reset Characteristics for more details.)

The use of an open-drain output enables RY/BY# pins from several devices to be connected

to a single pull-up resistor. A LOW will then indicate that one, or more, of the devices is busy.

BYTE# Input BYTE#/Word organization select: Switches between the x8 and x16 bus modes of the de-

vice. When LOW, the device is in x8 mode; when HIGH, it is in x16 mode.

64Mb: 3V Embedded Parallel NOR Flash

Signal Descriptions

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 16 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 6: Signal Descriptions (Continued)

Name Type Description

VCC Supply Supply voltage: Provides the power supply for all operations (READ, PROGRAM, and

ERASE).

The command interface is disabled when the VCC supply voltage is less than the lockout volt-

age, VLKO. This prevents bus WRITE operations from accidentally damaging the data during

power-up, power-down, and power surges. If the program/erase controller is programming

or erasing during this time, then the operation aborts and the memory contents being al-

tered will be invalid.

A 0.1 µF capacitor should be connected between the VCC supply voltage pin and the VSS

ground pin to decouple the current surges from the power supply. The PCB track widths must

be sufficient to carry the currents required during PROGRAM and ERASE operations, ICC3.

VSS Supply Ground: Reference for all voltage measurements. The device features two VSS pins which

must be both connected to the system ground.

RFU – Reserved for future use: RFUs should be not connected.

Table 7: Hardware Protection

VPP/WP# RST# Function

VIL VIH M29W640GT

and

M29W640GB

Last 2 blocks at the end of the addressable area (M29W640GT) and first 2 blocks at

the beginning of the addressable area (M29W640GB) protected from program/

erase operations

M29W640GH

and

M29W640GL

Last block at the end of the addressable area (M29W640GH) and first block at the

beginning of the addressable area (M29W640GL) protected from program/erase

operations

VID M29W640GT

and

M29W640GB

All blocks temporarily unprotected except the last 2 blocks at the end of the ad-

dressable area (M29W640GT) and first 2 blocks at the beginning of the addressa-

ble area (M29W640GB)

M29W640GH

and

M29W640GL

All blocks temporarily unprotected except the last block at the end of the address-

able area (M29W640GH) and first block at the beginning of the addressable area

(M29W640GL)

VIH or VID VID All blocks temporarily unprotected

VPP VIH or VID All blocks temporarily unprotected

64Mb: 3V Embedded Parallel NOR Flash

Signal Descriptions

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 17 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Memory Organization

Memory Configuration

The memory array for M29W640GH and M29W640GL devices is organized into 128 uni-

form blocks of 64KB each for x8 and 32KW each for x16.

Uniform Block Memory Map, x16 – 64Mb Density

Table 8: x16 Uniform Blocks [127:0]

Block Block Size

Address Range

NotesStart End

127 32KW 003F 8000 003F FFFF

126 32KW 003F 0000 003F 7FFF

125 32KW 003E 8000 003E FFFF

124 32KW 003E 0000 003E 7FFF

⋮ ⋮ ⋮ ⋮

3 32KW 0001 8000 0001 FFFF 1

2 32KW 0001 0000 0001 7FFF

1 32KW 0000 8000 0000 FFFF

0 32KW 0000 0000 0000 7FFF

Note: 1. Used as the extended block addresses when the device is in extended block mode.

Uniform Block Memory Map, x8 – 64Mb Density

Table 9: x8 Uniform Blocks [127:0]

Block Block Size

Address Range

NotesStart End

127 64KB 007F 0000 007F FFFF

126 64KB 007E 0000 007E FFFF

125 64KB 007D 0000 007D FFFF

124 64KB 007C 0000 007C FFFF

⋮ ⋮ ⋮ ⋮

3 64KB 0003 0000 0003 FFFF 1

2 64KB 0002 0000 0002 FFFF

1 64KB 0001 0000 0001 FFFF

0 64KB 0000 0000 0000 FFFF

Note: 1. Used as the extended block addresses when the device is in extended block mode.

64Mb: 3V Embedded Parallel NOR Flash

Memory Organization

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 18 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Bus Operations

Table 10: Bus Operations

Notes 1 and 2 apply to entire table

Operation CE# OE# WE#

8-Bit Mode 16-Bit Mode

A[MAX:0],

DQ15/A-1 DQ[14:8] DQ[7:0] A[MAX:0]

DQ15/A-1,

DQ[14:0]

READ L L H Cell address High-Z Data output Cell address Data output

WRITE L H L Command address High-Z Data input4Command address Data input4

STANDBY H X X X High-Z High-Z X High-Z

OUTPUT

DISABLE

X H H X High-Z High-Z X High-Z

Notes: 1. Typical glitches of less than 5ns on CE# and WE# are ignored by the device and do not

affect bus operations.

2. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW.

3. If WP# = LOW, the highest/lowest block remains protected, depending on the line item.

4. Data input is required when issuing a command sequence or performing data polling or

block protection.

Read

Bus READ operations read from the memory cells, registers, or CFI space. A valid READ

operation requires setting the appropriate address on the address inputs, taking CE#

and OE# LOW and holding WE# HIGH. Data I/O signals output the value.

Write

Bus WRITE operations write to the command interface. A valid WRITE operation re-

quires setting the appropriate address on the address inputs. These are latched by the

command interface on the falling edge of CE# or WE#, whichever occurs last. Values on

data I/O signals are latched by the command interface on the rising edge of CE# or

WE#, whichever occurs first. OE# must remain HIGH during the entire operation.

Standby and Automatic Standby

When the device is in read mode, driving CE# HIGH places the device in standby mode

and drives data I/Os to High-Z. Supply current is reduced to standby (ICC2), by holding

CE# within VCC ±0.2V.

During PROGRAM or ERASE operations, the device continues to use the program/erase

supply current (ICC3) until the operation completes.

Automatic standby enables low power consumption during read mode. When CMOS

levels (VCC ± 0.2 V) drive the bus, and following a READ operation and a period of inac-

tivity specified in DC Characteristics, the memory enters automatic standby as internal

supply current is reduced to ICC2. Data I/O signals still output data if a READ operation

is in progress.

64Mb: 3V Embedded Parallel NOR Flash

Bus Operations

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 19 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Output Disable

Data I/Os are High-Z when OE# is HIGH.

Status Register

Bus READ operations from any address, always read the status register during PRO-

GRAM and ERASE operations. It is also read during erase suspend when an address

within a block being erased is accessed.

Data Polling Bit (DQ7)

The data polling bit can be used to identify whether the program/erase controller has

successfully completed its operation or if it has responded to an erase suspend. The da-

ta polling bit is output on DQ7 when the status register is read.

During PROGRAM operations, DQ7 outputs the complement of the bit being program-

med to DQ7. After successful completion of the PROGRAM operation, the memory re-

turns to read mode and bus READ operations from the address just programmed out-

put DQ7, not its complement.

During ERASE operations DQ7 outputs 0, the complement of the erased state of DQ7.

After successful completion of the ERASE operation the memory returns to read mode.

In erase suspend mode, DQ7 will output a 1 during a bus READ operation within a

block being erased. DQ7 will change from a 0 to a 1 when the program/erase controller

has suspended the ERASE operation. The Data Polling Flowchart gives an example of

how to use DQ7. A valid address is the address being programmed or an address within

the block being erased.

Toggle Bit (DQ6)

The toggle bit can be used to identify whether the program/erase controller has suc-

cessfully completed its operation or if it has responded to an erase suspend. The toggle

bit is output on DQ6 when the status register is read.

During PROGRAM and ERASE operations, DQ6 changes from 0 to 1 to 0, and so forth,

with successive bus READ operations at any address. After successful completion of the

operation, the memory returns to read mode.

During erase suspend mode, DQ6 will output when addressing a cell within a block be-

ing erased. DQ6 will stop toggling when the program/erase controller has suspended

the ERASE operation.

The Data Toggle Flowchart gives an example of how to use DQ6 and the toggle and al-

ternative toggle waveforms describe toggle bit timing.

Error Bit (DQ5)

The error bit can be used to identify errors detected by the program/erase controller.

DQ5 is set to 1 when a PROGRAM, BLOCK ERASE, or CHIP ERASE operation fails to

write the correct data to the memory. If DQ5 is set, a READ/RESET command must be

issued before other commands are issued. The error bit is output on DQ5 when the sta-

tus register is read.

64Mb: 3V Embedded Parallel NOR Flash

Status Register

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 20 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Note that the PROGRAM command cannot change a bit set to 0 back to 1 and attempt-

ing to do so will set DQ5 to 1. A bus READ operation to that address will show the bit

remains 0. One of the ERASE commands must be used to set all the bits in a block or in

the whole memory from 0 to 1.

Erase Timer Bit (DQ3)

The erase timer bit can be used to identify the start of program/erase controller opera-

tion during a BLOCK ERASE command. After the program/erase controller starts eras-

ing, DQ3 is set to 1. Before the program/erase controller starts, DQ3 is set to 0 and addi-

tional blocks to be erased may be written to the command interface. The erase timer bit

is output on DQ3 when the status register is read.

Alternative Toggle Bit (DQ2)

The alternative toggle bit can be used to monitor the program/erase controller during

ERASE operations. It is output on DQ2 when the status register is read.

During CHIP ERASE and BLOCK ERASE operations, DQ2 changes from 0 to 1 to 0, and

so forth, with successive bus READ operations from addresses within the blocks being

erased. A protected block is treated the same as a block not being erased. After the oper-

ation completes, the memory returns to read mode.

During erase suspend, DQ2 changes from 0 to 1 to 0, and so forth, with successive bus

READ operations from addresses within the blocks being erased. Bus READ operations

to addresses within blocks not being erased will output the memory cell data as if in

read mode.

After an ERASE operation that causes DQ5 to be set, DQ2 can be used to identify which

block or blocks have caused the error. DQ2 changes from 0 to 1 to 0, and so forth, with

successive bus READ operations from addresses within blocks that have not erased cor-

rectly. DQ2 does not change if the addressed block has erased correctly.

Write to Buffer and Program Abort Bit (DQ1)

DQ1 is set to 1 when a WRITE TO BUFFER AND PROGRAM operation aborts. Other-

wise, DQ1 is set to 0. The WRITE TO BUFFER AND PROGRAM ABORT AND RESET com-

mand must be issued to return the device to read mode (see Command Interface for

more information).

Table 11: Status Register Bits

Operation Address DQ7 DQ6 DQ5 DQ3 DQ2 DQ1 RY/BY#

PROGRAM Any address DQ7# Toggle 0 – – 0 0

PROGRAM DURING

ERASE SUSPEND

Any address DQ7# Toggle 0 – – – 0

WRITE TO BUFFER

AND PROGRAM

ABORT

Any address DQ7# Toggle 0 – – 1 0

WRITE TO BUFFER

AND PROGRAM

Any address DQ7# Toggle 0 – – 0 0

PROGRAM ERROR Any address DQ7# Toggle 1 – – – High-Z

64Mb: 3V Embedded Parallel NOR Flash

Status Register

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 21 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 11: Status Register Bits (Continued)

Operation Address DQ7 DQ6 DQ5 DQ3 DQ2 DQ1 RY/BY#

CHIP ERASE Any address 0 Toggle 0 1 Toggle – 0

BLOCK ERASE BE-

FORE TIMEOUT

Erasing block 0 Toggle 0 0 Toggle – 0

Non-erasing block 0 Toggle 0 0 No

Toggle

– 0

BLOCK ERASE Erasing block 0 Toggle 0 1 Toggle – 0

Non-erasing block 0 Toggle 0 1 No

Toggle

– 0

ERASE SUSPEND Erasing block 1 No

Toggle

0 – Toggle – High-Z

Non-erasing block Data read as normal – High-Z

ERASE ERROR Good block address 0 Toggle 1 1 No

Toggle

– High-Z

Faulty block address 0 Toggle 1 1 Toggle – High-Z

Note: 1. Unspecified data bits should be ignored.

64Mb: 3V Embedded Parallel NOR Flash

Status Register

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 22 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 6: Data Polling Flowchart

Start

DQ7 = Data

DQ5 = 1

DQ7 = Data

Yes

Read DQ7 and DQ5 at valid address

Read DQ7 at valid address

SuccessFailure

64Mb: 3V Embedded Parallel NOR Flash

Status Register

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 23 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 7: Data Toggle Flowchart

DQ6 = Toggle

DQ5 = 1

DQ6 = Toggle

Yes

Start

Read DQ6 at valid address

Read DQ6 and DQ5 at valid address

Read DQ6 (twice) at valid address

SuccessFailure

READ Operations

READ/RESET Command

The READ/RESET (F0h) command returns the device to read mode and resets the errors

in the status register. One or three bus WRITE operations can be used to issue the

READ/RESET command.

64Mb: 3V Embedded Parallel NOR Flash

READ Operations

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 24 Micron Technology, Inc. reserves the right to change products or specifications without notice.

To return the device to read mode, this command can be issued between bus WRITE

cycles before the start of a PROGRAM or ERASE operation. If the READ/RESET com-

mand is issued during the timeout of a BLOCK ERASE operation, the device requires up

to 10μs to abort, during which time no valid data can be read.

READ CFI Command

The READ CFI (98h) command puts the device in read CFI mode and is valid only when

the device is in read array or auto select mode. One bus WRITE cycle is required to issue

the command.

Once in read CFI mode, bus READ operations will output data from the CFI memory

area. A READ/RESET command must be issued to return the device to the previous

mode (read array or auto select ). A second READ/RESET command is required to put

the device in read array mode from auto select mode.

64Mb: 3V Embedded Parallel NOR Flash

READ Operations

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 25 Micron Technology, Inc. reserves the right to change products or specifications without notice.

AUTO SELECT Operations

AUTO SELECT Command

At power-up or after a hardware reset, the device is in read mode. It can then be put in

auto select mode by issuing an AUTO SELECT (90h) command or by applying VID to A9.

Auto select mode enables the following device information to be read:

• Electronic signature, which includes manufacturer and device code information.

• Block protection, which includes the block protection status and extended memory

block protection indicator.

Electronic signature or block protection information is read by executing a READ opera-

tion with control signals and addresses set.

Auto select mode can be used by the programming equipment to automatically match a

device with the application code to be programmed.

Three consecutive bus WRITE operations are required to issue an AUTO SELECT com-

mand. The device remains in auto select mode until a READ/RESET or READ CFI com-

mand is issued.

The device cannot enter auto select mode when a PROGRAM or ERASE operation is in

progress (RY/BY# LOW). However, auto select mode can be entered if the PROGRAM or

ERASE operation has been suspended by issuing a PROGRAM SUSPEND or ERASE SUS-

PEND command.

To enter auto select mode by applying VID to A9 (see the following tables).

Auto select mode is exited by performing a reset. The device returns to read mode un-

less it entered auto select mode after an ERASE SUSPEND or PROGRAM SUSPEND

command, in which case it returns to erase or program suspend mode.

Table 12: Read Electronic Signature

Note 1 applies to entire table

Signal

READ Cycle Note

Manufactur-

er Code

Device Code

Device Code 2 Device Code 3

GH/GL GT/GB GH/GT GL/GB

CE# L L L L L L

OE# L L L L L L

WE# H H H H H H

Address Input, 8-Bit and 16-Bit

A[MAX:10] X X X X X X

A9 VID VID VID VID VID VID 2

A8 X X X X

A[7:5] L L L L

A4 X X X X

A[3:1] L L H H

A0 L H L H

Address Input, 8-Bit Only

64Mb: 3V Embedded Parallel NOR Flash

AUTO SELECT Operations

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 26 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 12: Read Electronic Signature (Continued)

Note 1 applies to entire table

Signal

READ Cycle Note

Manufactur-

er Code

Device Code

Device Code 2 Device Code 3

GH/GL GT/GB GH/GT GL/GB

DQ[15]/A-1 X X X X

Data I/O, 8-Bit Only

DQ[14:8] X X X X

DQ[7:0] 20h 7Eh 0Ch 10h 01h 00h

Data I/O, 16-Bit Only

DQ[15]/A-1, and DQ[14:0] 0020h 227Eh 220Ch 2210h 2201h 2200h

Notes: 1. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW.

2. When using the AUTO SELECT command to enter auto select mode, applying VID to A9 is

not required. A9 can be either VIL or VIH.

Table 13: Block Protection

Note 1 applies to entire table

Operation CE# OE#

Address Input Data I/O

A[MA

X] A15

A[14:1

3] A12

A[11:1

0] A9

A[8:7

] A6

A[5:4

]

A[3:

2] A1 A0

DQ[15]/A-1,

DQ[14:0]

BLOCK

PROTECT

(Group)

L VID LP Block

address

X VID X X

CHIP

UNPRO-

TECT

VID VID LP X H X H X VID X X

VERIFY

BLOCK

PROTEC-

TION

L L H Block

address

X VID X L X L H L Pass = xx01h

Retry =

xx00h

VERIFY

BLOCK

UNPRO-

TECT

L L H Block

address

X VID X H X L H L Retry =

xx01h

Pass = xx00h

READ

BLOCK

PROTEC-

TION

STATUS

L L H Block

address

X VID X L X L H L Protected

(x8) = 01h

Unprotected

(x8) = 00h

Protected

(x16) =

0001h

Unprotected

(x16) =

0000h

64Mb: 3V Embedded Parallel NOR Flash

AUTO SELECT Operations

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 27 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 13: Block Protection (Continued)

Note 1 applies to entire table

Operation CE# OE#

Address Input Data I/O

A[MA

X] A15

A[14:1

3] A12

A[11:1

0] A9

A[8:7

] A6

A[5:4

]

A[3:

2] A1 A0

DQ[15]/A-1,

DQ[14:0]

GL, GT, GB

READ EX-

TENDED

MEMORY

BLOCK

verify

CODE

L L H Block

address

X VID X L X L H H Factory-

locked = 98h

Customer-

lockable =

18h

READ EX-

TENDED

memory

BLOCK

verify

CODE

L L H Block

address

X VID X L X L H H Factory-

locked = 81h

Customer-

lockable =

01h

Note: 1. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW.

64Mb: 3V Embedded Parallel NOR Flash

AUTO SELECT Operations

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 28 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Command Interface

All bus WRITE operations to the memory are interpreted by the command interface.

Commands consist of one or more sequential bus WRITE operations. Failure to observe

a valid sequence of bus WRITE operations will result in the memory returning to read

mode. The long command sequences are imposed to maximize data security.

The address used for the commands changes depending on whether the memory is in

16-bit or 8-bit mode. See the x8 and x16 command tables, depending on the configura-

tion that is being used, for a summary of the commands.

READ/RESET Command

The READ/RESET command returns the memory to its read mode. It also resets the er-

rors in the status register. Either one or three bus WRITE operations can be used to issue

the READ/RESET command.

The READ/RESET command can be issued, between bus WRITE cycles before the start

of a PROGRAM or ERASE operation, to return the device to read mode. If the READ/

RESET command is issued during the timeout of a BLOCK ERASE operation, then the

device will take up to 10µs to abort. During the abort period, no valid data can be read

from the device. The READ/RESET command will not abort an ERASE operation when

issued while in erase suspend.

AUTO SELECT Command

The AUTO SELECT command is used to read the manufacturer code, the device code,

the block protection status, and the extended memory block verify code. Three consec-

utive bus WRITE operations are required to issue the AUTO SELECT command. After

the AUTO SELECT command is issued, the memory remains in auto select mode until a

READ/RESET command is issued. READ CFI QUERY and READ/RESET commands are

accepted in auto select mode, all other commands are ignored.

In auto select mode, the manufacturer code and the device code can be read by using a

bus READ operation with addresses and control signals set, as shown Bus Operations,

except for A9 (which is "Don’t Care").

The block protection status of each block can be read using a bus READ operation with

addresses and control signals set, as shown in Bus Operations, except for A9 (which is

"Don’t Care"). If the addressed block is protected, then 01h is output on DQ0–DQ7; oth-

erwise, 00h is output (in 8-bit mode).

The protection status of the extended memory block, or extended memory block verify

code, can be read using a bus READ operation with addresses and control signals, ex-

cept for A9 (which is "Don’t Care"). If the extended block is "factory-locked." then 80h is

output on DQ0–DQ7; otherwise, 00h is output (8-bit mode).

READ CFI QUERY Command

The READ CFI QUERY command is used to read data from the CFI. This command is

valid when the device is in the read array mode, or when the device is in auto select

mode.

One bus WRITE cycle is required to issue the READ CFI QUERY command. After the

command is issued, subsequent bus READ operations read from the CFI.

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 29 Micron Technology, Inc. reserves the right to change products or specifications without notice.

The READ/RESET command must be issued to return the device to the previous mode

(the read array mode or auto select mode). A second READ/RESET command would be

needed if the device is to be put in the read array mode from auto selected mode.

PROGRAM Command

The PROGRAM command can be used to program a value to one address in the memo-

ry array at a time. The command requires four bus WRITE operations; the final WRITE

operation latches the address and data, and starts the program/erase controller.

Programming can be suspended and then resumed by issuing a PROGRAM SUSPEND

command and a PROGRAM RESUME command, respectively.

If the address falls in a protected block, then the PROGRAM command is ignored, the

data remains unchanged. The status register is never read and no error condition is giv-

en.

During a PROGRAM operation, the memory will ignore all commands. It is not possible

to issue any command to abort or pause the operation. Bus READ operations during the

PROGRAM operation will output the status register on the data I/Os. (See Status Regis-

ter for more details.)

After the PROGRAM operation has completed, the memory will return to the read

mode, unless an error has occurred. When an error occurs, the memory will continue to

output the status register. A READ/RESET command must be issued to reset the error

condition and return to read mode.

Note that the PROGRAM command cannot change a bit set to 0 back to 1. One of the

ERASE commands must be used to set all the bits in a block or in the whole memory

from 0 to 1. (Refer to Program/Erase Characteristics.)

PROGRAM SUSPEND Command

The PROGRAM SUSPEND command allows the system to interrupt a PROGRAM opera-

tion so that data can be read from any block. When the PROGRAM SUSPEND command

is issued during a PROGRAM operation, the device suspends the PROGRAM operation

within the program suspend latency time and updates the status register bits (see Pro-

gram/Erase Characteristics).

After the PROGRAM operation has been suspended, the system can read array data

from any address. However, data read from program-suspended addresses is not valid.

The PROGRAM SUSPEND command may also be issued during a PROGRAM operation

while an erase is suspended. In this case, data may be read from any addresses not in

ERASE SUSPEND or PROGRAM SUSPEND. If a read is needed from the extended block

area (one-time program area), the user must use the proper command sequences to en-

ter and exit this region.

The system may also issue the AUTO SELECT command sequence when the device is in

the program suspend mode. The system can read as many auto select codes as re-

quired. When the device exits the auto select mode, the device reverts to the program

suspend mode, and is ready for another valid operation.

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 30 Micron Technology, Inc. reserves the right to change products or specifications without notice.

PROGRAM RESUME Command

After the PROGRAM RESUME command is issued, the device reverts to programming.

The controller can determine the status of the PROGRAM operation using the DQ7 or

DQ6 status bits, just as in the standard PROGRAM operation.

The system must write the PROGRAM RESUME command, to exit the program suspend

mode and to continue the programming operation.

Further issuing of the RESUME command is ignored. Another PROGRAM SUSPEND

command can be written after the device has resumed programming.

Fast Program Commands

There are five fast program commands available to improve the programming through-

put, by writing several adjacent words or bytes in parallel:

• QUADRUPLE and OCTUPLE BYE PROGRAM, available for x8 operations

• DOUBLE and QUADRUPLE WORD PROGRAM, available for x16 operations

• WRITE TO BUFFER AND PROGRAM

Fast program commands can be suspended and then resumed by issuing a PROGRAM

SUSPEND command and a PROGRAM RESUME command, respectively.

DOUBLE BYTE PROGRAM Command

The DOUBLE BYTE PROGRAM command is used to write a page of two adjacent bytes

in parallel. The two bytes must differ only in DQ15A-1. Three bus WRITE cycles are nec-

essary to issue the DOUBLE BYTE PROGRAM command:

The first bus cycle sets up the DOUBLE BYTE PROGRAM command; the second bus cy-

cle latches the address and the data of the first byte to be written; and the third bus cy-

cle latches the address and the data of the second byte to be written.

It is not necessary to raise VPP/WP# to 12V before issuing this command.

QUADRUPLE BYTE PROGRAM Command

The QUADRUPLE BYTE PROGRAM command is used to write a page of four adjacent

bytes in parallel. The four bytes must differ only for addresses A0, DQ15A-1. Five bus

write cycles are necessary to issue the QUADRUPLE BYTE PROGRAM command:

The first bus cycle sets up the QUADRUPLE BYTE PROGRAM command; the second bus

cycle latches the address and the data of the first byte to be written; the third bus cycle

latches the address and the data of the second byte to be written; the fourth bus cycle

latches the address and the data of the third byte to be written; and the fifth bus cycle

latches the address and the data of the fourth byte to be written and starts the program/

erase controller.

It is not necessary to raise VPP/WP# to 12V before issuing this command.

OCTUPLE BYTE PROGRAM Command

This is used to write eight adjacent bytes, in x8 mode, simultaneously. The addresses of

the eight bytes must differ only in A1, A0 and DQ15A-1.

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 31 Micron Technology, Inc. reserves the right to change products or specifications without notice.

12V must be applied to VPP/Wp# prior to issuing an OCTUPLE BYTE PROGRAM com-

mand. Care must be taken because applying a 12V voltage to VPP/WP#, because it will

temporarily unprotect any protected block.

Nine bus WRITE cycles are necessary to issue the command:

The first bus cycle sets up the command; the second bus cycle latches the address and

the data of the first byte to be written; the third bus cycle latches the address and the

data of the second byte to be written; the fourth bus cycle latches the address and the

data of the third byte to be written, the fifth bus cycle latches the address and the data

of the fourth byte to be written; the sixth bus cycle latches the address and the data of

the fifth byte to be written; the seventh bus cycle latches the address and the data of the

sixth byte to be written; the eighth bus cycle latches the address and the data of the sev-

enth byte to be written; and the ninth bus cycle latches the address and the data of the

eighth byte to be written and starts the program/erase controller.

DOUBLE WORD PROGRAM Command

The DOUBLE WORD PROGRAM command is used to write a page of two adjacent

words in parallel. The two words must differ only for the address A0.

Three bus WRITE cycles are necessary to issue the DOUBLE WORD PROGRAM com-

mand:

The first bus cycle sets up the DOUBLE WORD PROGRAM command; the second bus

cycle latches the address and the data of the first word to be written; and the third bus

cycle latches the address and the data of the second word to be written and starts the

program/erase controller.

After the PROGRAM operation has completed, the memory will return to the read

mode, unless an error has occurred. When an error occurs, bus READ operations will

continue to output the status register. A READ/RESET command must be issued to reset

the error condition and return to read mode.

Note that the fast program commands cannot change a bit set to 0 back to 1. One of the

ERASE commands must be used to set all the bits in a block or in the whole memory

from 0 to 1.

Typical program times are given in Program/Erase Characteristics.

Note:

It is not necessary to raise VPP/WP# to 12V before issuing this command.

QUADRUPLE WORD PROGRAM Command

This is used to write a page of four adjacent words (or 8 adjacent bytes), in x16 mode,

simultaneously. The addresses of the four words must differ only in A1 and A0.

12V must be applied to VPP/WP# prior to issuing a QUADRUPLE BYTE PROGRAM com-

mand. Care must be taken because applying a 12V voltage to VPP/WP#, because it will

temporarily unprotect any protected block.

Five bus WRITE cycles are necessary to issue the command:

The first bus cycle sets up the command; the second bus cycle latches the address and

the data of the first word to be written; the third bus cycle latches the address and the

data of the second word to be written; the fourth bus cycle latches the address and the

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 32 Micron Technology, Inc. reserves the right to change products or specifications without notice.

data of the third word to be written; and the fifth bus cycle latches the address and the

data of the fourth word to be written and starts the program/erase controller.

WRITE TO BUFFER AND PROGRAM Command

The WRITE TO BUFFER AND PROGRAM command makes use of the device’s 32-byte

write buffer to speed up programming. 16 words/32 bytes can be loaded into the write

buffer. Each write buffer has the same A4–A22 addresses. The WRITE TO BUFFER AND

PROGRAM command dramatically reduces system programming time compared to the

standard nonbuffered PROGRAM command.

When issuing a WRITE TO BUFFER AND PROGRAM command, V PP/WP# can be either

held HIGH or raised to VPPH.

Five successive steps are required to issue the WRITE TO BUFFER AND PROGRAM

command: The WRITE TO BUFFER AND PROGRAM command starts with two UN-

LOCK cycles. The third bus WRITE cycle sets up the WRITE TO BUFFER AND PRO-

GRAM command. The setup code can be addressed to any location within the targeted

block. The fourth bus WRITE cycle sets up the number of words to be programmed. Val-

ue n is written to the same block address, where n + 1 is the number of words to be pro-

grammed. The value of n + 1 must not exceed the size of the write buffer or the opera-

tion will abort. The fifth cycle loads the first address and data to be programmed. The

value of n bus WRITE cycles is used to load the address and data for each word into the

write buffer. Addresses must lie within the range from the start address+1 to the start

address + n - 1. Optimum performance is obtained when the start address corresponds

to a 64-byte boundary. If the start address is not aligned to a 64-byte boundary, the total

programming time is doubled.

All the addresses used in the WRITE TO BUFFER AND PROGRAM operation must lie

within the same page. If an address is written several times during a WRITE TO BUFFER

AND PROGRAM operation, the address/data counter will be decremented at each data

load operation, and the data will be programmed to the last word loaded into the buffer.

Invalid address combinations or failing to follow the correct sequence of bus WRITE cy-

cles will abort the WRITE TO BUFFER AND PROGRAM operation.

DQ1, DQ5, DQ6, DQ7 can be used to monitor the device status during a WRITE TO

BUFFER AND PROGRAM operation. It is possible to detect PROGRAM operation fails

when changing programmed data from 0 to 1; that is, when reprogramming data in a

portion of memory already programmed. The resulting data will be the logical OR be-

tween the previous value and the current value.

To program the content of the write buffer, this command must be followed by a WRITE

TO BUFFER AND PROGRAM CONFIRM command.

A WRITE TO BUFFER AND PROGRAM ABORT AND RESET command must be issued to

abort the WRITE TO BUFFER AND PROGRAM operation and reset the device in read

mode.

The write buffer programming sequence can be aborted in the following ways:

• Load a value that is greater than the page buffer size during the number of locations

to program step

• Write to an address in a block different than the one specified during the WRITE-BUF-

FER-LOAD command

• Write an address/data pair to a different write-buffer-page than the one selected by

the starting address during the write buffer data loading stage of the operation

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 33 Micron Technology, Inc. reserves the right to change products or specifications without notice.

• Write data other than the CONFIRM command after the specified number of data

load cycles.

The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location

loaded), DQ6 = toggle, and DQ5 = 0. A WRITE TO BUFFER ABORT AND RESET com-

mand sequence must be written to reset the device for the next operation. Note that the

full three-cycle WRITE TO BUFFER ABORT AND RESET command sequence is required

when using write-buffer-programming features in unlock bypass mode.

WRITE TO BUFFER AND PROGRAM CONFIRM Command

The WRITE TO BUFFER AND PROGRAM CONFIRM command is used to confirm a

WRITE TO BUFFER AND PROGRAM command and to program the n + 1 words loaded

in the write buffer by this command.

WRITE TO BUFFER AND PROGRAM ABORT AND RESET Command

The WRITE TO BUFFER AND PROGRAM ABORT AND RESET command is used to reset

the device after a WRITE TO BUFFER AND PROGRAM command has been aborted.

UNLOCK BYPASS Command

The UNLOCK BYPASS command is used in conjunction with the UNLOCK BYPASS

PROGRAM command to program the memory faster than with the standard PROGRAM

commands. When the cycle time to the device is long, considerable time saving can be

made by using these commands. Three bus WRITE operations are required to issue the

UNLOCK BYPASS command.

After the UNLOCK BYPASS command has been issued, the memory will only accept the

UNLOCK BYPASS PROGRAM command and the UNLOCK BYPASS RESET command.

The memory can be read as if in read mode.

When VPP is applied to VPP/WP#, the memory automatically enters the unlock bypass

mode and the UNLOCK BYPASS PROGRAM command can be issued immediately.

UNLOCK BYPASS PROGRAM Command

The UNLOCK BYPASS command is used in conjunction with the UNLOCK BYPASS

PROGRAM command to program the memory. When the cycle time to the device is

long, considerable time saving can be made by using these commands. Three bus

WRITE operations are required to issue the UNLOCK BYPASS command.

After the UNLOCK BYPASS command has been issued, the memory will only accept the

UNLOCK BYPASS PROGRAM command and the UNLOCK BYPASS RESET command.

The memory can be read as if in read mode.

The memory offers accelerated PROGRAM operations through VPP/WP#. When the sys-

tem asserts VPP on VPP/WP#, the memory automatically enters the unlock bypass mode.

The system may then write the two-cycle UNLOCK BYPASS PROGRAM command se-

quence. The memory uses the higher voltage on VPP/WP# to accelerate the UNLOCK

BYPASS PROGRAM operation.

Never raise VPP/WP# to VPP from any mode except read mode; otherwise, the memory

may be left in an indeterminate state.

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 34 Micron Technology, Inc. reserves the right to change products or specifications without notice.

UNLOCK BYPASS RESET Command

The UNLOCK BYPASS RESET command can be used to return to read/reset mode from

unlock bypass mode. Two bus WRITE operations are required to issue the UNLOCK BY-

PASS RESET command. A READ/RESET command does not exit from unlock bypass

mode.

CHIP ERASE Command

The CHIP ERASE command can be used to erase the entire chip. Six bus WRITE opera-

tions are required to issue the CHIP ERASE command and start the program/erase con-

troller.

If any blocks are protected, then these are ignored and all the other blocks are erased. If

all of the blocks are protected the CHIP ERASE operation appears to start but will termi-

nate within about 100µs, leaving the data unchanged. No error condition is given when

protected blocks are ignored.

During the ERASE operation the memory will ignore all commands, including the

ERASE SUSPEND command. It is not possible to issue any command to abort the oper-

ation. All bus READ operations during the CHIP ERASE operation will output the status

After the CHIP ERASE operation has completed, the memory will return to the read

mode, unless an error has occurred. When an error occurs the memory will continue to

output the status register. A READ/RESET command must be issued to reset the error

condition and return to read mode.

The CHIP ERASE command sets all of the bits in unprotected blocks of the memory to

1. All previous data is lost.

BLOCK ERASE Command

The BLOCK ERASE command can be used to erase a list of one or more blocks. Six bus

WRITE operations are required to select the first block in the list. Each additional block

in the list can be selected by repeating the sixth bus WRITE operation using the address

of the additional block. The BLOCK ERASE operation starts the program/erase control-

ler about 50µs after the last bus WRITE operation. After the program/erase controller

starts, it is not possible to select any more blocks. Each additional block must therefore

be selected within 50µs of the last block. The 50µs timer restarts when an additional

block is selected. The status register can be read after the sixth bus WRITE operation.

( See the status register section for details on how to identify whether the program/

erase controller has started the BLOCK ERASE operation.)

If any selected blocks are protected, then these are ignored and all the other selected

blocks are erased. If all of the selected blocks are protected, the BLOCK ERASE opera-

tion appears to start but will terminate within about 100µs, leaving the data unchanged.

No error condition is given when protected blocks are ignored.

During the BLOCK ERASE operation, the memory will ignore all commands except the

ERASE SUSPEND command. (Typical block erase times are given in the Program/Erase

Characteristics.) All bus READ operations during the BLOCK ERASE operation will out-

put the status register on the data I/Os.

After the BLOCK ERASE operation has completed, the memory will return to the read

mode, unless an error has occurred. When an error occurs, the memory will continue to

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 35 Micron Technology, Inc. reserves the right to change products or specifications without notice.

output the status register. A READ/RESET command must be issued to reset the error

condition and return to read mode.

The BLOCK ERASE command sets all of the bits in the unprotected selected blocks to 1.

All previous data in the selected blocks is lost.

ERASE SUSPEND Command

The ERASE SUSPEND command may be used to temporarily suspend a BLOCK ERASE

operation and return the memory to read mode. The command requires one bus

WRITE operation.

The program/erase controller will suspend within the erase suspend latency time of the

ERASE SUSPEND command being issued. After the program/erase controller has stop-

ped, the memory will be set to read mode and the erase will be suspended. If the ERASE

SUSPEND command is issued during the period when the memory is waiting for an ad-

ditional block (before the program/erase controller starts), then the erase is suspended

immediately and will start immediately when the ERASE RESUME command is issued.

It is not possible to select any further blocks to erase after the ERASE RESUME.

During ERASE SUSPEND, it is possible to read and program cells in blocks that are not

being erased; both READ and PROGRAM operations behave as normal on these blocks.

If any attempt is made to program in a protected block or in the suspended block, then

the PROGRAM command is ignored and the data remains unchanged. The status regis-

ter is not read and no error condition is given. Reading from blocks that are being

erased will output the status register.

It is also possible to issue the AUTO SELECT, READ CFI QUERY, and UNLOCK BYPASS

commands during an ERASE SUSPEND. The READ/RESET command must be issued to

return the device to read array mode before the RESUME command will be accepted.

ERASE RESUME Command

The ERASE RESUME command must be used to restart the program/erase controller af-

ter an erase suspend. The device must be in read array mode before the RESUME com-

mand will be accepted. An erase can be suspended and resumed more than once.

ENTER EXTENDED BLOCK Command

The device has an extra 256-byte block (extended block) that can only be accessed using

the ENTER EXTENDED BLOCK command. Three bus WRITE cycles are required to is-

sue the ENTER EXTENDED BLOCK command. After the command has been issued, the

device enters extended block mode where all bus READ or WRITE operations to the

boot block addresses access the extended block. The extended block (with the same ad-

dress as the boot blocks) cannot be erased, and can be treated as OTP memory. In ex-

tended block mode, the boot blocks are not accessible.

The extended block can be protected; however, once protected, the protection cannot

be undone.

EXIT EXTENDED BLOCK Command

The EXIT EXTENDED BLOCK command is used to exit from the extended block mode

and return the device to read mode. Four bus WRITE operations are required to issue

the command.

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 36 Micron Technology, Inc. reserves the right to change products or specifications without notice.

BLOCK PROTECT and CHIP UNPROTECT Commands

Groups of blocks can be protected against accidental program or erase. (See Memory

Organization for the protection groups.) The whole chip can be unprotected to allow

the data inside the blocks to be changed.

BLOCK PROTECT Command

Block protection can be used to prevent any operation from modifying the data stored

in the Flash. Each block can be protected individually. Once protected, PROGRAM and

ERASE operations on the block fail to change the data.

There are three techniques that can be used to control block protection. These are pro-

grammer technique, in-system technique, and temporary unprotect. Temporary unpro-

tect is controlled by RST#.

Unlike the command interface of the program/erase controller, the techniques for pro-

tecting and unprotecting blocks change between different Flash memory suppliers.

Care should be taken when changing drivers for one part to work on another.

Programmer Technique

The programmer technique uses high voltage levels (VID) on some of the bus pins.

These cannot be achieved using a standard microprocessor bus; therefore, the techni-

que is recommended only for use in programming equipment.

To protect a block, follow the steps in the following figure. To unprotect the whole chip,

it is necessary to protect all of the blocks first, then all blocks can be unprotected at the

same time. (See the Programmer Equipment Chip Protect Flowchart.)

The timing on these flowcharts is critical. Care should be taken to ensure that, where a

pause is specified, it is followed as closely as possible. Do not abort the procedure be-

fore reaching the end. Chip unprotect can take several seconds and a user message

should be provided to show that the operation is progressing.

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 37 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 8: Programmer Equipment Block Protect Flowchart

ADDRESS = BLOCK ADDRESS

OE#, A9 = VID ,

CE# = VIL

n = 0

Wait 4 µs

Wait 100 µs

WE# = VIL

WE# = VIH

CE#, OE# = VIH

A0, A2, A3, A6 = VIL

A1 = VIH ; A9 = V ID ; others = X

;

A9 = V IH

CE#, OE# = VIH

++n

= 25

START

FAIL

PASS

YES

DATA

01h

YES

WE# = VIH

CE# = VIL

Wait 4 µs

OE# = VIL

Wait 60ns

Read DATA

Verify Protect Set-upEnd

A9 = V IH

CE#, OE# = VIH

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 38 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 9: Programmer Equipment Chip Unprotect Flowchart

PROTECT ALL BLOCKS

A6, A12, A15 = V IH

CE#, OE#, A9 = V ID

DATA

WE# = VIH

CE#, OE# = VIH

ADDRESS = CURRENT BLOCK ADDRESS

A0, A2, A3 = VIL ; A1, A6 = V IH ; A9 = VID ; Others = X

Wait 10ms

00h

INCREMENT

CURRENT BLOCK

n = 0

CURRENT BLOCK = 0

Wait 4µs

WE# = VIL

++n

= 1000

START

YES

YESNO

NO LAST

BLOCK

YES

CE# = VIL

Wait 4µs

OE# = VIL

Wait 60ns

Read DATA

FAIL PASS

Verify Unprotect Set-upEnd

A9 = VIH

CE#, OE# = VIH

A9 = VIH

CE#, OE# = VIH

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 39 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 14: Programmer Technique Bus Operations

Notes 1 and 2 apply to entire table

Operation CE# OE# WE#

Address Inputs Data I/Os

A[MAX:0] DQ15/A-1, DQ[14:0]

BLOCK PROTECT L VID L pulse A9 = VID

A[21:12] block addresses

others = X

CHIP UNPROTECT VID VID L pulse A9 = VID

A12 = VIH

A15 = VIH

others = X

BLOCK

PROTECTION

VERIFY

L L VIH A0, A2, A3 = VIL

A1 = VIH

A6 = VIL

A9 = VID

A[21:12] block addresses

others = X

Pass = XX01h

Retry = XX00h

BLOCK

UNPROTECT

VERIFY

L L VIH A0, A2, A3 = VIL

A1 = VIH

A6 = VIH

A9 = VID

A[21:12] block addresses

others = X

Retry = XX01h

Pass = XX00h

Notes: 1. Typical glitches of less than 5ns on CE# and WE# are ignored by the device and do not

affect bus operations.

2. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW.

In-System Technique

The in-system technique requires a high-voltage level on RST#. This can be achieved

without violating the maximum ratings of the components on the microprocessor bus;

therefore, this technique is suitable for use after the Flash has been fitted to the system.

To protect a block, follow the steps in the following figure. To unprotect the whole chip,

it is necessary to protect all of the blocks first, then all the blocks can be unprotected at

the same time. (See the In-System Equipment Chip Unprotect Flowchart.)

The timing on these flowcharts is critical. Care should be taken to ensure that, where a

pause is specified, it is followed as closely as possible. Do not allow the microprocessor

to service interrupts that will upset the timing and do not abort the procedure before

reaching the end. Chip unprotect can take several seconds and a user message should

be provided to show that the operation is progressing.

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 40 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 10: In-System Equipment Block Protect Flowchart

WRITE 60h

ADDRESS = BLOCK ADDRESS

n = 0

Wait 100µs

WRITE 40h

ADDRESS = BLOCK ADDRESS

RST# = VIH

++n

= 25

START

FAIL

PASS

YES

DATA

01h

YES

RST# = VIH

Wait 4µs

Verify Protect Set-upEnd

READ DATA

ADDRESS = BLOCK ADDRESS

RST# = VID

ISSUE READ/RESET

COMMAND

ISSUE READ/RESET

COMMAND

WRITE 60h

ADDRESS = BLOCK ADDRESS

A0, A2, A3 = VIL ; A1 = VIH ; A6 = VIL

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 41 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 11: In-System Equipment Chip Protect Flowchart

WRITE 60h

ANY ADDRESS WITH

n = 0

CURRENT BLOCK = 0

Wait 10ms

WRITE 40h

ADDRESS = CURRENT BLOCK ADDRESS

RST# = VIH

++n

= 1000

START

FAIL PASS

YES

DATA

00h

YES

RST# = VIH

Wait 4µs

READ DATA

ADDRESS = CURRENT BLOCK ADDRESS

RST# = VID

ISSUE READ/RESET

COMMAND

ISSUE READ/RESET

COMMAND

PROTECT ALL BLOCKS

INCREMENT

CURRENT BLOCK

LAST

BLOCK

YES

WRITE 60h

ANY ADDRESS WITH

A0, A2, A3 = VIL ; A1 = VIH ; A6 = VIH

Verify Unprotect Set-upEnd

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 42 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 15: Commands – 16-Bit Mode (BYTE# = VIH)

Command Length

Bus WRITE Operations

1st 2nd 3rd 4th 5th 6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

READ/RESET 1 X F0

3 555 AA 2AA 55 X F0

AUTO SELECT 3 555 AA 2AA 55 555 90

READ CFI

QUERY

1 55 98

PROGRAM 4 555 AA 2AA 55 555 A0 PA PD

DOUBLE

WORD PRO-

GRAM

3 555 50 PA0 PD0 PA1 PD1

QUADRUPLE

WORD PRO-

GRAM

5 555 56 PA0 PD0 PA1 PD1 PA2 PD2 PA3 PD3

UNLOCK BY-

PASS

3 555 AA 2AA 55 555 20

UNLOCK BY-

PASS PRO-

GRAM

2 X A0 PA PD

UNLOCK BY-

PASS RESET

2 X 90 X 00

WRITE TO BUF-

FER AND PRO-

GRAM

N + 5 555 AA 2AA 55 BA 25 BA N

#ID1-389

note_98

C39A774

A2647E7

A884636

F7461B6

#ID1-389

note_0B

6F5BDF5

13B4BD5

B3607A8

8ABAC28

PD WBL

#ID1-389

note_0E4

1314B3A

C04D50A

C51D0FA

1046037

WRITE TO BUF-

FER AND PRO-

GRAM ABORT

AND RESET

3 555 AA 2AA 55 555 F0

WRITE TO BUF-

FER AND PRO-

GRAM CON-

FIRM

1 BA

#ID1-389

note_565

5C246AF

734A209

3427626

3BD0616

CHIP ERASE 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 43 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 15: Commands – 16-Bit Mode (BYTE# = VIH) (Continued)

Command Length

Bus WRITE Operations

1st 2nd 3rd 4th 5th 6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

BLOCK ERASE 6+ 555 AA 2AA 55 555 80 555 AA 2AA 55 BA 30

PROGRAM/

ERASE SUS-

PEND

1 X B0

PROGRAM/

ERASE RESUME

1 X 30

ENTER EXTEN-

DED BLOCK

3 555 AA 2AA 55 555 88

EXIT EXTEN-

DED BLOCK

4 555 AA 2AA 55 555 90 X 00

Notes: 1. X = " Don’t Care;" PA = Program address; PD = Program data; BA = Any address in the

block. All values in the table are in hexadecimal. The command interface only uses A-1;

A0–A10 and DQ0–DQ7 to verify the commands; A11–A20, DQ8–DQ14 and DQ15 are

"Don't Care." DQ15A-1 is A-1 when BYTE# is VIL or DQ15 when BYTE# is VIH.

2. The maximum number of cycles in the command sequence is 36. N + 1 is the number of

words to be programmed during the WRITE TO BUFFER AND PROGRAM operation.

3. Each buffer has the same A4–A22 addresses. A0–A3 are used to select a word within the

N + 1 word page.

4. The 6th cycle has to be issued N time. WBL scans the word inside the page.

5. BA must be identical to the address loaded during the WRITE TO BUFFER AND PRO-

GRAM 3rd and 4th cycles.

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 44 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 16: Commands – 8-Bit Mode (BYTE# = VIL)

Command Length

Bus WRITE Operations

1st 2nd 3rd 4th 5th 6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

READ/RESET 1 X F0

3 AAA AA 555 55 X F0

AUTO SELECT 3 AAA AA 555 55 AAA 90

READ CFI

QUERY

1 AA 98

PROGRAM 4 AAA AA 555 55 AAA A0 PA PD

DOUBLE BYTE

PROGRAM

3 AAA 50 PA0 PD0 PA1 PD1

QUADRUPLE

BYTE PRO-

GRAM

5 AAA 56 PA0 PD0 PA1 PD1 PA2 PD2 PA3 PD3

OCTUPLE BYTE

PROGRAM

9 AAA 8B PA0 PD0 PA1 PD1 PA2 PD2 PA3 PD3 PA4 PD4 2

WRITE TO BUF-

FER AND PRO-

GRAM

N + 5 AAA AA 555 55 BA 25 BA N 2PA 4PD WBL 5PD

WRITE TO BUF-

FER AND PRO-

GRAM ABORT

AND RESET

3 AAA AA 555 55 AAA F0

WRITE TO BUF-

FER AND PRO-

GRAM CON-

FIRM

1 BA 629

UNLOCK BY-

PASS

3 AAA AA 555 55 AAA 20

UNLOCK BY-

PASS PRO-

GRAM

2 X A0 PA PD

UNLOCK BY-

PASS RESET

2 X 90 X 00

CHIP ERASE 6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10

BLOCK ERASE 6+ AAA AA 555 55 AAA 80 AAA AA 555 55 BA 30

PROGRAM/

ERASE SUS-

PEND

1 X B0

PROGRAM/

ERASE RE-

SUME

1 X 30

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 45 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 16: Commands – 8-Bit Mode (BYTE# = VIL) (Continued)

Command Length

Bus WRITE Operations

1st 2nd 3rd 4th 5th 6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

ENTER EXTEN-

DED BLOCK

3 AAA AA 555 55 AAA 88

EXIT EXTEN-

DED BLOCK

4 AAA AA 555 55 AAA 90 X 00

Notes: 1. X = " Don’t Care;" PA = Program address; PD = Program data; BA = Any address in the

block. All values in the table are in hexadecimal. The command interface only uses A-1,

A0–A10, and DQ0–DQ7 to verify the commands; A11–A20, DQ8–DQ14, and DQ15 are

"Don't Care." DQ15A-1 is A-1 when BYTE# is VIL or DQ15 when BYTE# is VIH.

2. The following is content for address: Data cycles 7 through 10: PA5–PD5, PA6–PD6, PA7–

PD7, PA8–PD8.

3. The maximum number of cycles in the command sequence is 68. N + 1 is the number of

words to be programmed during the WRITE TO BUFFER AND PROGRAM operation.

4. Each buffer has the same A4–A22 addresses. A0–A3 and DQ15A-1 are used to select a

word within the N + 1 word page.

5. The 6th cycle has to be issued N time. WBL scans the word inside the page.

6. BA must be identical to the address loaded during the WRITE TO BUFFER AND PRO-

GRAM 3rd and 4th cycles.

64Mb: 3V Embedded Parallel NOR Flash

Command Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 46 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Common Flash Interface

The common Flash interface (CFI) is a JEDEC-approved, standardized data structure

that can be read from the Flash memory device. It allows a system's software to query

the device to determine various electrical and timing parameters, density information,

and functions supported by the memory. The system can interface easily with the de-

vice, enabling the software to upgrade itself when necessary.

When the READ CFI command is issued, the device enters CFI query mode and the data

structure is read from memory. The following tables show the addresses (A-1, A[7:0])

used to retrieve the data. The query data is always presented on the lowest order data

outputs (DQ[7:0]), and the other data outputs (DQ[15:8]) are set to 0.

Table 17: Query Structure Overview

Note 1 applies to the entire table

Address

Subsection Name Descriptionx16 x8

10h 20h CFI query identification string Command set ID and algorithm data offset

1Bh 36h System interface information Device timing and voltage information

27h 4Eh Device geometry definition Flash device layout

40h 80h Primary algorithm-specific extended query table Additional information specific to the primary al-

gorithm (optional)

61h C2h Security code area 64-bit unique device number

Note: 1. Query data are always presented on the lowest order data outputs (DQ[7:0]). DQ[15:8]

are set to 0.

Table 18: CFI Query Identification String

Note 1 applies to the entire table

Address

Data Description Valuex16 x8

10h 20h 0051h Query unique ASCII string "QRY" "Q"

11h 22h 0052h "R"

12h 24h 0059h "Y"

13h

14h

26h

28h

0002h

0000h

Primary algorithm command set and control interface ID code 16-bit ID

code defining a specific algorithm

AMD

compatible

15h

16h

2Ah

2Ch

0040h

0000h

Address for primary algorithm extended query table (see the Primary Algo-

rithm-Specific Extended Query Table)

P = 40h

17h

18h

2Eh

30h

0000h

Alternate vendor command set and control interface ID code second ven-

dor-specified algorithm supported

–

19h

1Ah

32h

34h

0000h

Address for alternate algorithm extended query table –

Note: 1. Query data are always presented on the lowest order data outputs (DQ[7:0]). DQ[15:8]

are set to 0.

64Mb: 3V Embedded Parallel NOR Flash

Common Flash Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 47 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 19: CFI Query System Interface Information

Note 1 applies to the entire table

Address

Data Description Valuex16 x8

1Bh 36h 0027h VCC logic supply minimum program/erase voltage

Bits[7:4] BCD value in volts

Bits[3:0] BCD value in 100mV

2.7V

1Ch 38h 0036h VCC logic supply maximum program/erase voltage

Bits[7:4] BCD value in volts

Bits[3:0] BCD value in 100mV

3.6V

1Dh 3Ah 00B5h VPPH (programming) supply minimum program/erase voltage

Bits[7:4] hex value in volts

Bits[3:0] BCD value in 100mV

11.5V

1Eh 3Ch 00C5h VPPH (programming) supply maximum program/erase voltage

Bits[7:4] hex value in volts

Bits[3:0] BCD value in 100mV

12.5V

1Fh 3Eh 0004h Typical timeout for single byte/word program = 2nμs 16µs

20h 40h 0004h Typical timeout for maximum size buffer program = 2nμs 16µs

21h 42h 000Ah Typical timeout per individual block erase = 2nms 1s

22h 44h 0000h Typical timeout for full chip erase = 2nms –

23h 46h 0004h Maximum timeout for byte/word program = 2n times typical 256µs

24h 48h 0004h Maximum timeout for buffer program = 2n times typical 200µs

25h 4Ah 0003h Maximum timeout per individual block erase = 2n times typical 8s

26h 4Ch 0000h Maximum timeout for chip erase = 2n times typical –

Note: 1. The values in this table are valid for both packages.

Table 20: Device Geometry Definition

Address

Data Description Valuex16 x8

27h 4Eh 0017h Device size = 2n in number of bytes 8MB

28h

29h

50h

52h

0002h

0000h

Flash device interface code description x8, x16

asynchronous

2Ah

2Bh

54h

56h

0005h

0000h

Maximum number of bytes in multi-byte program or page =

2Ch 58h 0001h Number of erase block regions. It specifies the number of

regions containing contiguous erase blocks of the same size.

M29W640GH and M29W640GL devices only

0002h Number of erase block regions. It specifies the number of

regions containing contiguous erase blocks of the same size.

M29W640GT and M29W640GB devices only

2Dh

2Eh

5Ah

5Ch

0007h

0000h

Region 1 information

Number of identical-size erase blocks = 007Fh + 1

M29W640GH and M29W640GL devices only

128

64Mb: 3V Embedded Parallel NOR Flash

Common Flash Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 48 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 20: Device Geometry Definition (Continued)

Address

Data Description Valuex16 x8

2Fh

30h

5Eh

60h

0000h

Region 1 information

Block size in region 1 = 0100h × 256 bytes

M29W640GH and M29W640GL devices only

64KB

2Dh

2Eh

5Ah

5Ch

0007h

0000h

Region 1 information

Number of identical-size erase blocks = 0007h + 1

M29W640GT and M29W640GB devices only

2Fh

30h

5Eh

60h

0020h

0000h

Region 1 information

Block size in region 1 = 0200h × 256 bytes

M29W640GT and M29W640GB devices only

8KB

31h

32h

62h

64h

007Eh

0000h

Region 2 information

Number of identical-size erase blocks = 007Eh + 1

M29W640GT and M29W640GB devices only

127

33h

34h

66h

68h

0000h

0001h

Region 2 information

Block size in region 2 = 0100h × 256 bytes

M29W640GT and M29W640GB devices only

64KB

35h

36h

37h

38h

6Ah

6Ch

6Eh

70h

0000h

Region 3 information

Number of identical-size erase blocks = 0000h + 1

Region 3 information

Block size in region 3 = 0000h × 256 bytes

M29W640GT and M29W640GB devices only

39h

3Ah

3Bh

3Ch

72h

74h

76h

78h

0000h

Region 4 information

Number of identical-size erase blocks = 0000h + 1

Region 4 information

Block size in region 4 = 0000h × 256 bytes

M29W640GT and M29W640GB devices only

Note: 1. For bottom boot devices, erase block region 1 is located from address 000000h to

007FFFh and erase block region 2 from address 008000h to 3FFFFFh. For top boot devi-

ces, erase block region 1 is located from address 000000h to 3F7FFFh and erase block re-

gion 2 from address 3F8000h to 3FFFFFh.

Table 21: Primary Algorithm-Specific Extended Query Table

Note 1 applies to the entire table

Address

Data Description Valuex16 x8

40h 80h 0050h Primary algorithm extended query table unique ASCII string “PRI” "P"

41h 82h 0052h "R"

42h 84h 0049h "I"

43h 86h 0031h Major version number, ASCII "1"

44h 88h 0033h Minor version number, ASCII "3"

64Mb: 3V Embedded Parallel NOR Flash

Common Flash Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 49 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 21: Primary Algorithm-Specific Extended Query Table (Continued)

Note 1 applies to the entire table

Address

Data Description Valuex16 x8

45h 8Ah 0000h Address sensitive unlock (bits[1:0]):

00 = Required

01 = Not required

Silicon revision number (bits[7:2])

46h 8Ch 0002h Erase suspend:

00 = Not supported

01 = Read only

02 = Read and write

47h 8Eh 0004h Block protection:

00 = Not supported

x = Number of blocks per group

48h 90h 0001h Temporary block unprotect:

00 = Not supported

01 = Supported

49h 92h 0004h Block protect/unprotect 04

4Ah 94h 0000h Simultaneous operations:

Not supported

–

4Bh 96h 0000h Burst mode:

00 = Not supported

01 = Supported

4Ch 98h 0001h Page mode:

00 = Not supported

01 = 4-word page; 02 = 8-word page

4Dh 9Ah 00B5h VPPH supply minimum program/erase voltage:

Bits[7:4] hex value in volts

Bits[3:0] BCD value in 100mV

11.5V

4Eh 9Ch 00C5h VPPH supply maximum program/erase voltage:

Bits[7:4] hex value in volts

Bits[3:0] BCD value in 100mV

12.5V

4Fh 9Eh 00xxh Top/bottom boot block flag:

xx = 02h: M29W640GB bottom boot device

xx = 03h M29W640GT top boot device

xx = 04h M29W640GL first block protected by VPP/WP#

xx = 05h: M29W640GH, last block protected by VPP/WP#

Uniform +

VPP/WP# protect-

ing highest or

lowest block

50h A0h 0001h Program suspend:

00 = Not supported

01 = Supported

Note: 1. The values in this table are valid for both packages.

64Mb: 3V Embedded Parallel NOR Flash

Common Flash Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 50 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 22: Security Code Area

Address

Data Descriptionx16 x8

61h C3h, C2h XXXX 64-bit unique device number

62h C5h, C4h XXXX

63h C7h, C6h XXXX

64h C9h, C8h XXXX

64Mb: 3V Embedded Parallel NOR Flash

Common Flash Interface

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 51 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Absolute Ratings and Operating Conditions

Stresses greater than those listed may cause permanent damage to the device. This is a

stress rating only, and functional operation of the device at these or any other condi-

tions outside those indicated in the operational sections of this specification is not im-

plied. Exposure to absolute maximum rating conditions for extended periods may ad-

versely affect reliability.

Table 23: Absolute Maximum/Minimum Ratings

Parameter Symbol Min Max Unit Notes

Temperature under bias TBIAS –50 125 °C

Storage temperature TSTG –65 150 °C

Input/output voltage VIO –0.6 VCC + 0.6 V 1, 2

Supply voltage VCC –0.6 4 V

Program voltage VPP –0.6 13.5 V 3

Identification voltage VID –0.6 13.5 V

Notes: 1. During signal transitions, minimum voltage may undershoot to −2V for periods less than

20ns.

2. During signal transitions, maximum voltage may overshoot to VCC + 2V for periods less

than 20ns.

3. VPP must not remain at 12V for more than a total of 80 hours.

Table 24: Operating Conditions

Parameter Symbol

M29W640GT/B and

M29W640GH/L

Unit NotesMin Max

Supply voltage VCC 2.7 3.6 V

Ambient operating temperature TA-40 85/125 °C 1

Load capacitance CL30 pF

Input rise and fall times – – 10 ns

Input pulse voltages – 0 to VCC V

Input and output timing reference voltages – VCC/2 V

Note: 1. 85°C = industrial part; 125°C = autograde part.

64Mb: 3V Embedded Parallel NOR Flash

Absolute Ratings and Operating Conditions

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 52 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 12: AC Measurement Load Circuit

25kΩ

Device

under

test

VCC

VPP

0.1µF

VCC

25kΩ

0.1µF

Note: 1. CL includes jig capacitance.

Figure 13: AC Measurement I/O Waveform

VCCQ

VCCQ/2

Table 25: Input/Output Capacitance

Parameter Symbol Test Condition Min Max Unit

Input capacitance CIN VIN = 0V – 6 pF

Output capacitance COUT VOUT = 0V – 12 pF

Note: 1. Sampled only, not 100% tested.

64Mb: 3V Embedded Parallel NOR Flash

Absolute Ratings and Operating Conditions

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 53 Micron Technology, Inc. reserves the right to change products or specifications without notice.

DC Characteristics

Table 26: DC Current Characteristics

Parameter Symbol Conditions Typ Max Unit Notes

Input leakage current ILI 0V ≤ VIN ≤ VCC – ±1 µA 1

Output leakage current ILO 0V ≤ VOUT ≤ VCC – ±1 µA

Read current ICC1 CE# = VIL, OE# = VIH,

f = 6 MHz

10 mA

Standby current ICC2 CE# = VCC ±0.2V

RST# = VCC ±0.2V

100 µA 2

Program/Erase current ICC3 Program/Erase controller ac-

tive: VPP/WP# = VIL or VIH;

VPP/WP# = VPP

– 20 mA 3

Current for VPP/WP# program

acceleration

IPP VCC = 2.7V ±10% – 15 mA

Notes: 1. The maximum input leakage current is ±5uA on VPP/WP#.

2. When the bus is inactive for 300ns or more, the memory enters automatic standby.

3. Sampled only; not 100% tested.

Table 27: DC Voltage Characteristics

Parameter Symbol Conditions Min Max Unit Notes

Input LOW voltage VIL – –0.5 0.8 V

Input HIGH voltage VIH – 0.7 VCC VCC + 0.3 V

Voltage for VPP/WP# program ac-

celeration

VPP VCC = 2.7V ±10% 11.5 12.5 V

Output LOW voltage VOL IOL = 1.8mA – 0.45 V

Output HIGH voltage VOH IOH = –100µA VCC – 0.4 – V

Identification voltage VID – 11.5 12.5 V

Program/erase lockout supply

voltage

VLKO – 1.8 2.3 V 1

Note: 1. Sampled only; not 100% tested.

64Mb: 3V Embedded Parallel NOR Flash

DC Characteristics

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 54 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Read AC Characteristics

Table 28: Read AC Characteristics

Parameter

Symbol

Condition Min/Max 60ns 70ns 90ns Unit NotesLegacy JEDEC

Address valid to next address val-

tRC tAVAV CE# = VIL,

OE# = VIL

Min 60 70 90 ns

Address valid to output valid tACC tAVQV CE# = VIL,

OE# = VIL

Max 60 70 90 ns

Address valid to output valid

(page)

tPAGE tAVQV1 CE# = VIL,

OE# = VIL

Max 25 30 30 ns

CE# LOW to output transition tLZ tELQX OE# = VIL Min 0 0 0 ns 1

CE# LOW to output valid tCE tELQV OE# = VIL Max 60 70 90 ns

OE# LOW to output transition tOLZ tGLQX CE# = VIL Min 0 0 0 ns 1

OE# LOW to output valid tOE tGLQV CE# = VIL Max 25 30 30 ns

CE# HIGH to output High-Z tHZ tEHQZ OE# = VIL Max 25 30 30 ns 1

OE# HIGH to output High-Z tDF tGHQZ CE# = VIL Max 25 30 30 ns 1

CE#, OE#, or address transition to

output transition

tOH tEHQX,

tGHQX,

tAXQX

– Min 0 0 0 ns

CE# to BYTE# LOW tELFL tELBL – Max 5 5 5 ns

CE# to BYTE# HIGH tELFH tELBH – Max 5 5 5 ns

BYTE# LOW to output High-Z tFLQZ tBLQZ – Max 25 25 25 ns

BYTE# HIGH to output valid tFHQV tBHQV – Max 25 30 30 ns

Note: 1. Sampled only; not 100% tested.

64Mb: 3V Embedded Parallel NOR Flash

Read AC Characteristics

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 55 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 14: Random AC Timing

Valid

tACC

tRC

tOH

tCE

tFHQV

tLZ

tOH

tHZ

tOLZ tOH

tOE tDF

A[MAX:0]/A-1

CE#

OE#

DQ[7:0]/

DQ[15:8]

BYTE#

tFHQZ

tELFL/

tELFH

Notes: 1. Data are output on DQ0-DQ15. DQ8-DQ14 are High-Z in 8-bit mode.

2. Addresses differ in x8 mode.

3. BYTE# = VIL in x8 mode.

64Mb: 3V Embedded Parallel NOR Flash

Read AC Characteristics

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 56 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 15: Page Read AC Timing

Valid

A[MAX:2]

Valid Valid Valid Valid

A[1:0]/A-1

tACC

tCE tOH

tOH

tDF

tHZ

tOE

tPAGE

Valid Valid

CE#

OE#

DQ[15:0] Valid

Notes: 1. Data are output on DQ0-DQ15. DQ8-DQ14 are High-Z in 8-bit mode.

2. Addresses differ in x8 mode.

64Mb: 3V Embedded Parallel NOR Flash

Read AC Characteristics

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 57 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Write AC Characteristics

Table 29: WE#-Controlled Write AC Characteristics

Parameter

Symbol

Min/Max 60ns 70ns 90ns Unit NotesLegacy JEDEC

Address valid to next address valid tWC tAVAV Min 60 70 90 ns

CE# LOW to WE# LOW tCS tELWL Min 0 0 0 ns

WE# LOW to WE# HIGH tWP tWLWH Min 35 35 35 ns

Input valid to WE# HIGH tDS tDVWH Min 30 30 30 ns

WE# HIGH to input transition tDH tWHDX Min 0 0 0 ns

WE# HIGH to CE# HIGH tCH tWHEH Min 0 0 0 ns

WE# HIGH to WE# LOW tWPH tWHWL Min 25 25 25 ns

Address valid to WE# LOW tAS tAVWL Min 0 0 0 ns

WE# LOW to address transition tAH tWLAX Min 45 45 45 ns

OE# HIGH to WE# LOW – tGHWL Min 0 0 0 ns

WE# HIGH to OE# LOW tOEH tWHGL1 Min 0 0 0 ns

Program/erase valid to RY/BY# LOW tBUSY tWHRL1 Max 0 0 0 ns 1

VCC HIGH to CE# LOW tVCS tVCHEL Min 50 50 50 µs

Note: 1. Sampled only; not 100% tested.

64Mb: 3V Embedded Parallel NOR Flash

Write AC Characteristics

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 58 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 16: WE#-Controlled AC Timing

Valid

tAS

tWC

A[MAX:0]/

A-1

CE#

OE#

WE#

VCC

DQ[7:0]/

DQ[15:8]

RY/BY#

tAH

tCS

tCH

tOEH

tGHWL tWP

tWPH

tDS tDH

tVCS

tBUSY

Note: 1. Addresses differ in x8 mode.

64Mb: 3V Embedded Parallel NOR Flash

Write AC Characteristics

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 59 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 30: CE#-Controlled Write AC Characteristics

Parameter

Symbol

Min/Max 60ns 70ns 90ns Unit NotesLegacy JEDEC

Address valid to next address valid tWC tAVAV Min 60 70 90 ns

WE# LOW to CE# LOW tWS tWLEL Min 0 0 0 ns

CE# LOW to CE# HIGH tCP tELEH Min 35 35 35 ns

Input valid to CE# HIGH tDS tDVEH Min 30 30 30 ns

CE# HIGH to input transition tDH tEHDX Min 0 0 0 ns

CE# HIGH to WE# HIGH tWH tEHWH Min 0 0 0 ns

CE# HIGH to CE# LOW tCPH tEHEL1 Min 25 25 25 ns

Address valid to CE# LOW tAS tAVEL Min 0 0 0 ns

CE# LOW to address transition tAH tELAX Min 45 45 45 ns

OE# HIGH to CE# LOW – tGHEL Min 0 0 0 ns

CE# HIGH to OE# LOW tOEH tEHGL1 Min 0 0 0 ns

Program/Erase valid to RY/BY# LOW tBUSY tEHRL Max 0 0 0 ns 1

VCC HIGH to WE# LOW tVCS tVCHWL Min 50 50 50 ns

Note: 1. Sampled only; not 100% tested.

64Mb: 3V Embedded Parallel NOR Flash

Write AC Characteristics

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 60 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 17: CE#-Controlled AC Timing

Valid

tAS

tWC

A[MAX:0]/

A-1

CE#

OE#

WE#

VCC

DQ[7:0]/

DQ[15:8]

RY/BY#

tAH

tWS

tWH

tOEH

tGHEL tCP

tCPH

tDS tDH

tVCS

tBUSY

Note: 1. Addresses differ in x8 mode.

64Mb: 3V Embedded Parallel NOR Flash

Write AC Characteristics

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 61 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Toggle and Alternative Toggle AC Characteristics

Table 31: Toggle and Alternative Toggle AC Characteristics

Parameter

Symbol

Min/Max 60ns 70ns 90ns UnitLegacy JEDEC

Address setup time to OE# LOW

during toggle bit polling

tASO tAXGL Min 10 10 10 ns

Address hold time from OE# dur-

ing toggle bit polling

tAHT tGHAX Min 10 10 10 ns

tEHAX Min 10 10 10 ns

CE# HIGH during toggle bit polling tCEPH tEHEL2 Min 10 10 10 ns

Output hold time during data and

toggle bit polling

tOEH tWHGL2 Min 20 20 20 ns

tGHGL2 Min 20 20 20 ns

Note: 1. Data for tELQV and tGLQV are in the Read AC Characteristics table.

Figure 18: Toggle/Alternative Toggle, CE# Controlled

OE#

CE#

DQ7

WE#

DQ7 DQ7=

Valid data

DQ6-DQ0 DQ6-DQ0=

Output flag

DATA

DATA DQ6-DQ0=

Valid data

Hi-Z

RY/BY#

tWHEH

tGLQV

tEHQZ

tGHQZ

tWHGL2

tELQV

tWHRL

tWHWH1 or tWHWH2

Notes: 1. DQ7 returns valid data bit when the ongoing PROGRAM or ERASE command is comple-

ted.

2. See the AC Characteristics for specifications.

64Mb: 3V Embedded Parallel NOR Flash

Toggle and Alternative Toggle AC Characteristics

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 62 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 19: Toggle/Alternative Toggle, OE# Controlled

WE#

CE#

OE#

A0-A20/

A– 1

DQ6/DQ2 Toggle Toggle Toggle Stop

toggling

Output

Valid

tGHAX tAXGL

tEHAX tAVEL

tEHEL2

tWHGL2

tGHGL2 tGHGL2

Data

RY/BY#

tWHDX tGLQV tELQV

tWHRL

Notes: 1. DQ6 stops toggling when the ongoing PROGRAM or ERASE command is completed.

DQ2 stops toggling when the ongoing CHIP ERASE or BLOCK ERASE command is com-

pleted.

2. Addresses differ in x8 mode.

3. See the AC Characteristics for specifications.

64Mb: 3V Embedded Parallel NOR Flash

Toggle and Alternative Toggle AC Characteristics

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 63 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Program/Erase Characteristics

Table 32: Program/Erase Times and Endurance Cycles

Notes 1 and 2 apply to the entire table

Parameter Symbol Min Typ Max Unit Notes

Chip erase – 80 400 s 3

Block erase (64KB) tWHWH2 – 0.5 – s 4, 5

Erase suspend latency time – – 50 µs 6

Program (byte or word) – 10 200 µs 3

Program (double byte) 10 200 µs 3

Program (double word/quadruple byte) 10 200 µs 3

Program (quadruple word/octuple byte) 10 200 µs 3

Program (single byte and word) tWHWH1 – 10 µs 3, 7

Program (32-byte 16-word using Write to

Buffer and Program)

180 µs

Program (32-byte 16-word using Write to

Buffer and Program, VPP/WP# = 12V)

45 µs

Chip program (byte by byte) – 80 400 s 3

Chip program (word by word) 40 200 s 3

Chip program (double word/quadruple

byte)

20 100 s 3

Chip program (quadruple word/octuple

byte)

– 10 50 s 3

Program suspend latency time – – 4 µs

PROGRAM/ERASE cycles (per block) 100,000 – – cycles

Data retention 20 – – years

Notes: 1. Typical values measured at room temperature and nominal voltages and for not cycled

devices.

2. Sampled, but not 100% tested.

3. Maximum value measured at worst case conditions for both temperature and VCC after

100,000 PROGRAM/ERASE cycles.

4. Time does not include pre-programming time.

5. Block erase polling cycle time.

6. Maximum value measured at worst case conditions for both temperature and VCC.

7. Programming polling cycle time.

64Mb: 3V Embedded Parallel NOR Flash

Program/Erase Characteristics

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 64 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 20: WE# Controlled Program Waveform

OE#

WE#

A0-A20/

A– 1

DQ0-DQ7/

DQ8-DQ15

CE#

555h

AOh

PA PA

3rd cycle 4th cycle

PD DQ7 DOUT

DOUT

tAVAV tAVAV

tAVWL tWLAX

Data Polling Read cycle

tELWL tWHEH tELQV

tGHWL

tWLWH tWHWL

tWHWH1

tGLQV

tDVWH

tWHDX

tGHQZ tAXQX

Notes: 1. Only the third and fourth cycles of the Program command are represented. The Program

command is followed by the check of status register data polling bit and by a read oper-

ation that outputs the data, DOUT, programmed by the previous Program command.

2. PA is address of the memory location to be programmed. PD is the data to be program-

med.

3. DQ7# is the complement of the data bit being programmed to DQ7.

4. Addresses differ in x8 mode.

64Mb: 3V Embedded Parallel NOR Flash

Program/Erase Characteristics

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 65 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 21: CE# Controlled Program Waveform

OE#

CE#

A0-A20/

A– 1

DQ0-DQ7/

DQ8-DQ15

WE#

555h

AOh

PA PA

3rd cycle 4th cycle

PD DQ7 DOUT

tAVAV

tAVEL tELAX

Data Polling

tWLEL tEHWH

tGHEL

tELEH tEHEL1

tWHWH1

tDVEH

tEHDX

Notes: 1. Only the third and fourth cycles of the Program command are represented. The Program

command is followed by the check of status register data polling bit.

2. PA is address of the memory location to be programmed. PD is the data to be program-

med.

3. DQ7# is the complement of the data bit being programmed to DQ7.

4. Addresses differ in x8 mode.

64Mb: 3V Embedded Parallel NOR Flash

Program/Erase Characteristics

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 66 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 22: Chip/Block Erase Waveform

OE#

WE#

A0-A20/

A– 1

DQ0-DQ7/

DQ8-DQ15

CE#

555h

AAh

2AAh 555h

55h 80h AAh

tAVAV

tAVWL tWLAX

tELWL tWHEH

tGHWL

tWLWH tWHWL

tDVWH

tWHDX

555h 2AAh 555h/BA

(1)

55h 10h/

30h

Notes: 1. For a Chip Erase command, addresses and data are 555h and 10h, respectively, while

they are BA and 30h for a Block Erase command.

2. BA is the block address.

3. Addresses differ in x8 mode.

64Mb: 3V Embedded Parallel NOR Flash

Program/Erase Characteristics

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 67 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Reset Characteristics

Table 33: Reset/Block Temporary Unprotect AC Characteristics

Condition/Parameter

Symbol

Min/Max 60, 70, 90ns Unit NotesLegacy JEDEC

RST# HIGH to WE# LOW, CE# LOW, OE# LOW tRH tPHWL

tPHEL

tPHGL

Min 50 ns 1

RY/BY# HIGH to WE# LOW, CE# LOW, OE# LOW tRB tRHWL

tRHEL

tRHGL

Min 0 ns 1

RST# pulse width tRP tPLPX Min 500 ns

RST# LOW to read mode tREADY tPLYH Max 50 µs 1

RST# rise time to VID tVIDR tPHPHH Min 500 ns 1, 2

VPP rise and fall time – tVHVPP Min 500 ns 1

Notes: 1. Sampled only; not 100% tested.

2. For fast program operations using VPP/WP# at 12V.

Figure 23: Reset/Block Temporary Unprotect AC Waveforms

tRP

tRB

tRH

tREADY

WE#, CE#,

OE#

RY/BY#

RST# tVIDR

Figure 24: Accelerated Programming Timing Waveform

VPP /WP#

VPP

VIL or VIH tVHVPP tVHVPP

64Mb: 3V Embedded Parallel NOR Flash

Reset Characteristics

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 68 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Package Dimensions

Figure 25: 48-Pin TSOP – 12mm x 20mm

Die

0.50 TYP

0.10 MAX

0.10 MIN/

0.21 MAX 0.60

+0.10

3o2o

0.22 +0.05

0.10 +0.05

1.20 MAX

1.00 +0.05

0.80 TYP

20.00+0.20

18.40+0.10

12.00+0.10

Note: 1. All dimensions are in millimeters.

64Mb: 3V Embedded Parallel NOR Flash

Package Dimensions

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 69 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 26: 56-Pin TSOP – 14mm x 20mm

Detail A

Seating plane

0.6 ±0.1

0.25 gage plane

(0.1 ±0.05)

Pin A1 ID

0.1 A

See Detail A

56X 0.1 ±0.05

0.15 ±0.05

56X 0.22 ±0.05 14 ±0.1

18.4 ±0.1

20 ±0.2

1.1 ±0.1

0.5 TYP

16.2 CTR

11.8 CTR

2X Ø1.2

Plating material composition: Ni/Pd/Au.

Plastic package material: epoxy novolac.

Package width and length include mold flash.

Notes: 1. All dimensions are in millimeters.

2. For the lead width value of 0.22 ±0.05, there is also a legacy value of 0.15 ±0.05.

64Mb: 3V Embedded Parallel NOR Flash

Package Dimensions

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 70 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 27: 48-Ball TFBGA – 6mm x 8mm

Ball A1

5.60 TYP

1.20 MAX

0.90 MAX

0.10 MAX

0.26 MIN

1.00 TYP

0.40 TYP

4.00 TYP

0.40 TYP

1.20 TYP

0.80 TYP

8.00 +0.10

6.00 +0.10

0.35 MIN/

0.45 MAX

Note: 1. All dimensions are in millimeters.

64Mb: 3V Embedded Parallel NOR Flash

Package Dimensions

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 71 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 28: 64-Ball TBGA – 10mm x 13mm

BALL "A1"

0.10 MAX

0.50 TYP

1.00 TYP 0.80 TYP

1.20 MAX

1.50 TYP

3.00 TYP

0.50 TYP

7.00 TYP

10.00 ±0.10

13.00 ±0.10

0.35 MIN/

0.50 MAX

0.30 -0.10

+0.05

Note: 1. All dimensions are in millimeters.

64Mb: 3V Embedded Parallel NOR Flash

Package Dimensions

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 72 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 29: 64-Ball FBGA – 11mm x 13mm

Ball A1

+0.1011.00

+0.1013.00

+0.050.48

7.00 TYP

2.00 TYP

3.00 TYP

0.50 TYP

1.00 TYP

0.15 MAX

0.80 TYP

1.40 MAX

0.55 MIN/

0.65 MAX

Note: 1. All dimensions are in millimeters.

64Mb: 3V Embedded Parallel NOR Flash

Package Dimensions

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 73 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Revision History

Rev. E – 2/18

• Added Important Notes and Warnings section for further clarification aligning to in-

dustry standards

Rev. D – 03/15

• Updated MPN decoder

• Updated 56-pin TSOP 14mm x 20mm package

Rev. C – 07/13

• Updated Command Interface and Command tables

Rev. B – 06/13

• Removed Part Numbers by Array Matrix table in Features

Rev. A – 11/12

• Initial Micron brand release

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000

www.micron.com/products/support Sales inquiries: 800-932-4992

Micron and the Micron logo are trademarks of Micron Technology, Inc.

All other trademarks are the property of their respective owners.

This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.

Although considered final, these specifications are subject to change, as further product development and data characterization some-

times occur.

64Mb: 3V Embedded Parallel NOR Flash

Revision History

PDF: 09005aef84e35115

m29W_640GH/L_GT/B.pdf - Rev. E 02/18 EN 74 Micron Technology, Inc. reserves the right to change products or specifications without notice.