AO4826 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4826 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4826 is Pb-free (meets ROHS & Sony 259 specifications). AO4826L is a Green Product ordering option. AO4826 and AO4826L are electrically identical. VDS (V) = 60V ID = 6.3A (VGS = 10V) RDS(ON) < 25m (VGS = 10V) RDS(ON) < 30m (VGS = 4.5V) D1 S2 G2 S1 G1 8 7 6 5 1 2 3 4 G1 SOIC-8 G2 S1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Maximum 60 Units V 20 V 40 2 W 1.28 TJ, TSTG C -55 to 150 Symbol t 10s Steady-State Steady-State A 5 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C S2 6.3 TA=25C Power Dissipation D2 D2 D2 D1 D1 RJA RJL Typ 50 73 31 Max 62.5 110 40 Units C/W C/W C/W AO4826 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V 1 TJ=55C 5 Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage VDS=VGS ID=250A 1 ID(ON) On state drain current VGS=10V, VDS=5V 40 100 nA 3 V 20 25 34 42 VGS=4.5V, I D=5.7A 22 30 VDS=5V, ID=6.3A 27 TJ=125C Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge A 2.1 VGS=10V, I D=6.3A Crss Units V VDS=48V, VGS=0V VGS(th) IS Max 60 IGSS RDS(ON) Typ A VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, I D=6.3A m S 0.74 1920 m 1 V 3 A 2300 pF 155 pF 116 pF 0.65 0.8 47.6 58 nC 24.2 30 nC 6 nC Gate Drain Charge 14.4 nC Turn-On DelayTime 7.6 ns Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=30V, RL=4.7, RGEN=3 5 ns 28.9 ns 33.2 43 5.5 trr Body Diode Reverse Recovery Time IF=6.3A, dI/dt=100A/s Qrr Body Diode Reverse Recovery Charge IF=6.3A, dI/dt=100A/s ns 40 ns nC A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 4 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4826 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 10V 4V 25 4.5V VDS=5V 125C 20 ID(A) ID (A) 30 20 3.5V 15 10 10 25C 5 VGS=3V 0 0 1 2 3 4 0 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 Normalized On-Resistance 2.2 22 RDS(ON) (m) 3 VGS(Volts) Figure 2: Transfer Characteristics 24 VGS=4.5V 20 VGS=10V 18 16 VGS=10V 2 ID=6.3A 1.8 VGS=4.5V 1.6 ID=5.7A 1.4 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 ID=6.3A 1.0E+00 40 125C 125C 1.0E-01 IS (A) RDS(ON) (m) 2.5 30 25C 1.0E-02 25C 1.0E-03 20 1.0E-04 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4826 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 10 VDS=15V ID=6.3A 3000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 2500 2000 1500 Coss 1000 Crss 2 500 0 0 0 10 20 30 40 50 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 40 RDS(ON) limited 10ms 1s 1.0 0.1s 10s TJ(Max)=150C TA=25C 25 30 TJ(Max)=150C TA=25C 20 10 DC 0 0.001 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) ZJA Normalized Transient Thermal Resistance 20 30 Power (W) ID (Amps) 10s 100s 1ms 10.0 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 0.1 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000