GaAs Hyperabrupt Varactor Diode
Gamma = 1.0, 1.25, & 1.50
Rev. V8
MA46410 thru MA46480 Series
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product(s) or information contained herein without notice.
2 ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit-
ment to produce in volume is not guaranteed.
Electrical Specifications @ TA = +25 °C
MA46450 Series Gamma = 1.0 4
Gamma4 = 0.9 - 1.1, VR = 2 - 20 Volts
Junction Capacitance Ratio (CJ2/CJ20) = 5.0 - 8.0
Breakdown Voltage @ IR = 10µA, Vb = 22 V Min
Reverse Leakage Current @ VR =18V, IR = 100 nA Max
Part
Number
Total
Capaci-
tance2,3,4,5
+/-10%
Total
Capacitance
Ratio7
Q
Minimum
Vr=4 V Vr=2 V
Vr=20 V Vr=4 V
f=50 MHz
(pF) - -
MA46450 0.5 9 2.0-3.8 4000
MA46451 0.7 2.9-4.4 4000
MA46452 1.0 3.6-5.2 3000
MA46457 2.2 4.1-6.1 3000
MA46461 4.7 4.8-7.2 1500
Part
Number
Total
Capaci-
tance2,3,4,5
Total
Capacitance
Ratio7
Q
Minimum
Vr=4 V Vr=2 V
Vr=12 V Vr=4 V
f=50 MHz
(pF) - -
MA464108 0.30-0.439 2.7-4.3 3000
MA46413 0.90-1.10 4.2-5.7 2500
MA46416 1.62-1.98 5.2-4.9 2500
MA46418 2.42-2.97 5.7-7.6 1800
MA46425 9.00-11.00 6.6-8.8 1200
Electrical Specifications @ TA = +25°C
MA46410 thru MA46425 Series Gamma = 1.54
Gamma4 = 1.4-1.6 VR = 2 - 12 Volts
Junction Capacitance Ratio (CJ2/CJ12) = 6.2-10.8
Breakdown Voltage @ IR = 10µA, Vb = 18 V Min
Reverse Leakage Current @ VR =10V, IR = 100 nA Max
Electrical Specifications @ TA = +25 °C
MA46470 thru MA46485 Series Gamma = 1.25 4
Gamma4 = 1.13-1.38, VR = 2 - 20 Volts
Junction Capacitance Ratio (CJ2/CJ20) = 8.15-12.99
Breakdown Voltage @ IR = 10µA, Vb = 22 V Min
Reverse Leakage Current @ VR =18V, IR = 100 nA Max
Part
Number
Total
Capaci-
tance2,3,4,5
+/-10%
Total
Capacitance
Ratio7
Q
Minimum
Vr=4 V Vr=2 V
Vr=20 V Vr=4 V
f=50 MHz
(pF) - -
MA46470 0.5 9 2.2/4.1 4000
MA46471 0.7 9 3.6/5.6 4000
MA46472 1.0 4.8/7.4 3000
MA46473 1.2 4.8/7.4 3000
MA46474 1.5 5.0/7.4 3000
MA46475 1.8 6.6/8.7 3000
MA46476 2.0 6.6/8.7 3000
MA46477 2.2 6.6/8.7 3000
MA46479 3.3 6.4/10.0 2000
MA46480 3.7 6.8/11.0 2000
MA46481 4.7 6.9/11.1 1500
MA46483 6.8 7.2/11.5 1500
MA46485 10.0 7.5/12.0 1500
1. All GaAs tuning varactors are available in chip form .
Please contact factory for part number information.
2. Case parasitics (Cp and Ls) are given for most case styles
along with case outlines in the appendix.
3. The nominal tolerance at -4 Volts is ± 10%. Closer toler-
ances are available upon request.
4. The values guaranteed for gamma are measured on un-
packaged chips. The total capacitance versus bias voltage
curve will deviate slightly from the chip capacitance versus
bias voltage curve due to the package parasitic capaci-
tance (Cp).
5. Capacitance is measured at 1 MHz.
6. Reverse voltage (Vbr) is measured at 10 microamps.
7. The total capacitance and capacitance ratios shown are for
diodes housed in case style 30 with Cp= 0.170pF unless
otherwise specified. Other case styles will result in different
values.
8. Part only offered in die form. The capacitance values are
for die form.
9. Specification is for diode junction capacitance