MBR350-D - ON Semiconductor

 Semiconductor Components Industries, LLC, 2003

April, 2003 - Rev. 3 1Publication Order Number:

MBR350/D

MBR350, MBR360

MBR360 is a Preferred Device

Axial Lead Rectifiers

. . . employing the Schottky Barrier principle in a large area

metal-to-silicon power diode. State-of-the-art geometry features

epitaxial construction with oxide passivation and metal overlap

contact. Ideally suited for use as rectifiers in low-voltage,

high-frequency inverters, free wheeling diodes, and polarity

protection diodes.

•Extremely Low vF

•Low Power Loss/High Efficiency

•Highly Stable Oxide Passivated Junction

•Low Stored Charge, Majority Carrier Conduction

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 1.1 gram (approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead and Mounting Surface Temperature for Soldering Purposes:

220°C Max. for 10 Seconds, 1/16″ from case

•Shipped in plastic bags, 500 per bag

•Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to

the part number

•Polarity: Cathode indicated by Polarity Band

•Marking: B350, B360

MAXIMUM RATINGS

Rating Symbol Max Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage MBR350

MBR360

VRRM

VRWM

VR50

Average Rectified Forward Current

TA = 65°C (RJA = 28°C/W,

P.C. Board Mounting)

IO3.0 A

Non-Repetitive Peak

Surge Current (Note 1)

(Surge Applied at Rated Load

Conditions Halfwave, Single

Phase, 60 Hz, TL = 75°C)

IFSM 80 A

Operating and Storage Junction

Temperature Range

(Reverse Voltage Applied)

TJ, Tstg -65 to +150 °C

Peak Operating Junction

Temperature

(Forward Current Applied)

TJ(pk) 150 °C

1. Lead Temperature reference is cathode lead 1/32″ from case.

Device Package Shipping

ORDERING INFORMATION

AXIAL LEAD

CASE 267-05

(DO-201AD)

STYLE 1

SCHOTTKY BARRIER

RECTIFIERS

3.0 AMPERES

50, 60 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

MBR350 Axial Lead 500 Units/Bag

MBR350RL Axial Lead 1500/Tape & Reel

MBR360 Axial Lead 500 Units/Bag

MBR360RL Axial Lead 1500/Tape & Reel

MARKING DIAGRAM

MBR

3x0

MBR3x0= Device Code

x = 5 or 6

http://onsemi.com

MBR350, MBR360

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient (see Note 4, Mounting Method 3) RθJA 28 °C/W

ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 2)

Characteristic Symbol Max Unit

Maximum Instantaneous Forward Voltage (Note 3)

(iF = 1.0 Amp)

(iF = 3.0 Amp)

(iF = 9.4 Amp)

vF0.600

0.740

1.080

Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 3)

TL = 25°C

TL = 100°C

iR0.60

2. Lead Temperature reference is cathode lead 1/32″ from case.

3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.

TA, AMBIENT TEMPERATURE (C°)

20 1006040 80

4.0

2.0

3.0

5.0

1.0

SQUARE

WAVE

120 140 160

I , AVERAGE FORWARD CURRENT (AMPS)

F (AV)

VR REVERSE VOLTAGE (VOLTS)

02010 30 40

0.002

0.005

0.01

0.05

0.02

0.10

0.50

0.20

5.0

2.0

1.0

25°C

vF, INSTANTANEOUS VOLTAGE (VOLTS)

0.20 0.4

5.0

0.03

0.02

0.07

0.2

0.1

3.0

2.0

1.0

0.6 0.8

0.3

0.05

0.5

0.7

I , REVERSE CURRENT (mA)

7.0

i , INSTANTANEOUS FORWARD CURRENT (AMPS)

1.0 1.2 1.4

*The curves shown are typical for the highest voltage

device in the voltage grouping. Typical reverse current

for lower voltage selections can be estimated from

these same curves if VR is sufficiently below rated VR.

50 60 80

75°C

100°C

TJ = 150°C

TJ = 100°C 25°C

75°C

TJ = 150°C

RATED VR

RJA = 28°C/W

Figure 1. Typical Forward Voltage

Figure 2. Typical Reverse Current*

Figure 3. Current Derating Ambient

(Mounting Method #3 per Note 4)

MBR350, MBR360

http://onsemi.com

VR, REVERSE VOLTAGE (VOLTS)IF (AV), AVERAGE FORWARD CURRENT (AMPS)

0 2.01.0 3.0 4.0 5.0

1.0

2.0

3.0

4.0

5.0

TJ = 150°C

P , AVERAGE POWER DISSIPATION (WATTS)

F (AV)

SQUARE

WAVE

02010 30 40 50

300

TJ = 25°C

C, CAPACITANCE (pF)

200

100

Figure 4. Power Dissipation Figure 5. Typical Capacitance

TYPICAL VALUES FOR RθJA IN STILL AIR

Data shown for thermal resistance junction-to-ambient

(RθJA) for the mountings shown is to be used as typical

guideline values for preliminary engineering, or in case the

tie point temperature cannot be measured.

Mounting

Method

Lead Length, L (in)

1/8 1/4 1/2 3/4 RθJA

50 51 53 55 °C/W

°C/W

58 59 61 63

NOTE 4 — MOUNTING DATA

ÉÉÉÉÉÉÉÉÉÉÉ

ÉÉÉÉÉÉÉÉÉÉÉÉÉ

ÉÉ

Mounting Method 1

P.C. Board where available

copper surface is small.

L L L

Mounting Method 2

Vector Push-In

Terminals T-28

Mounting Method 3

P.C. Board with

2-1/2″ X 2-1/2″

copper surface.

L = 1/2’’

Board Ground Plane

MBR350, MBR360

http://onsemi.com

PACKAGE DIMENSIONS

AXIAL LEAD

CASE 267-05

(DO-201AD)

ISSUE G

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. CATHODE (POLARITY BAND)

2. ANODE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.287 0.374 7.30 9.50

B0.189 0.209 4.80 5.30

D0.047 0.051 1.20 1.30

K1.000 −−− 25.40 −−−

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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

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liability, including without limitation special, consequential or incidental damages. “T ypical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

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PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051

Phone: 81-3-5773-3850

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

MBR350/D

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