Rev. 2.1 BSP125 SIPMOS Power-Transistor Feature Product Summary * N-Channel VDS * Enhancement mode RDS(on) * Logic Level ID * dv/dt rated 600 V 45 0.12 A PG-SOT223 * Pb-free lead plating; RoHS compliant x Qualified according to AEC Q101 RoHS compliant Tape and Reel Information Marking Packaging BSP125 Non dry L6433: 4000 pcs/reel BSP125 PG-SOT223 Yes Type Package BSP125 PG-SOT223 Yes L6327: 1000 pcs/reel Maximum Ratings, at T j = 25 C, unless otherwise specified Symbol Parameter Continuous drain current BSP125 Non dry Value Unit A ID TA=25C 0.12 TA=70C 0.1 Pulsed drain current ID puls 0.48 dv/dt 6 VGS 20 TA=25C Reverse diode dv/dt kV/s IS=0.12A, VDS =480V, di/dt=200A/s, T jmax=175C Gate source voltage ESD Class (JESD22-A114-HBM) V 1A (>250V, <500V) Power dissipation Ptot 1.8 W -55... +150 C TA=25C, T A=25 Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2009-08-18 Rev. 2.1 BSP125 Thermal Characteristics Symbol Parameter Values Unit min. typ. max. - - 25 @ min. footprint - - 115 @ 6 cm2 cooling area 1) - - 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) SMD version, device on PCB: RthJA Electrical Characteristics, at Tj = 25 C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)DSS 600 - - VGS(th) 1.3 1.9 2.3 Static Characteristics Drain-source breakdown voltage V VGS=0, ID=0.25mA Gate threshold voltage, V GS = VDS ID=94A Zero gate voltage drain current A I DSS VDS=600V, VGS=0, Tj =25C - - 0.1 VDS=600V, VGS=0, Tj =125C - - 5 I GSS - 10 100 nA RDS(on) - 26 60 RDS(on) - 25 45 Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.11A Drain-source on-state resistance VGS=10V, ID=0.12A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2009-08-18 Rev. 2.1 BSP125 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.06 0.18 - S pF Dynamic Characteristics Transconductance g fs VDS2*ID*RDS(on)max, ID=0.1A Input capacitance C iss VGS=0, VDS=25V, - 100 150 Output capacitance C oss f=1MHz - 8.2 12.3 Reverse transfer capacitance C rss - 3.2 4.8 Turn-on delay time td(on) VDD=300V, VGS =10V, - 7.7 11.6 Rise time tr ID=0.13A, RG =6 - 14.4 21 Turn-off delay time td(off) - 20 30 Fall time tf - 110 165 - 0.27 0.3 - 2.3 3.5 - 4.4 6.6 V(plateau) VDD =400V, ID =0.13A - 3.44 - V IS - - 0.12 A - - 0.48 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =400V, ID =0.13A VDD =400V, ID =0.13A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25C forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD VGS=0, IF=0.12A - 0.8 1.2 V Reverse recovery time trr VR=300V, IF=lS, - 156 235 ns Reverse recovery charge Qrr diF/dt=100A/s - 165 250 nC Page 3 2009-08-18 Rev. 2.1 BSP125 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS 10 V 1.9 BSP125 0.13 BSP125 A W 0.11 1.6 0.1 1.4 1.2 ID Ptot 0.09 0.08 0.07 1 0.06 0.8 0.05 0.6 0.04 0.03 0.4 0.02 0.2 0 0 0.01 20 40 60 80 100 120 C 0 0 160 20 40 60 80 100 120 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 parameter : D = tp /T 10 160 C TA 1 BSP125 10 2 A BSP125 K/W 10 1 ID t = 270.0s p /ID 10 -1 = R V Z thJC 10 0 1 ms DS 10 0 D = 0.50 ) (on DS 10 ms 0.20 0.10 10 -2 0.05 10 -1 0.02 single pulse 0.01 DC 10 -3 0 10 10 1 10 2 V 10 3 VDS 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 tp Page 4 2009-08-18 Rev. 2.1 BSP125 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 C, VGS parameter: Tj = 25 C, VGS 100 10V 6.0V A 5.0V 4.0V 3.8V 3.6V 3.2V 0.2 3.0V 2.8V 2.6V 2.6V 2.8V 3.0V 3.2V 3.6V 4.0V 5.0V 6.0V 10V R DS(on) ID 0.3 60 0.15 40 0.1 20 0.05 0 0 1 2 3 4 5 6 7 8 V 0 0 10 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 VDS A 0.5 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID = f ( VGS ); VDS 2 x ID x RDS(on)max gfs = f(ID) parameter: Tj = 25 C parameter: Tj = 25 C 0.5 0.4 S A gfs ID 0.3 0.3 0.25 0.2 0.2 0.15 0.1 0.1 0.05 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0 0.1 0.2 0.3 A 0.5 ID VGS Page 5 2009-08-18 Rev. 2.1 BSP125 9 Drain-source on-state resistance (.) Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = 0.12 A, VGS = 10 V parameter: VGS = VDS ; ID =94A 170 BSP125 2.8 98% 2 VGS(th) RDS(on) 140 120 100 1.6 typ. 80 1.2 60 2% 98% 0.8 40 typ 0.4 20 0 -60 -20 20 60 100 C 0 -60 180 -20 20 60 100 Tj C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz, Tj = 25 C parameter: Tj 10 3 10 0 pF BSP125 A 10 -1 C IF 10 2 10 1 10 -2 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 8 16 24 32 40 52 V VDS 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2009-08-18 Rev. 2.1 BSP125 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG); parameter: V DS , ID = 0.12 A pulsed, Tj = 25 C V(BR)DSS = f (Tj ) 16 BSP125 BSP125 720 V V(BR)DSS V VGS 12 10 0.2 VDS max 8 680 660 640 0.5 VDS max 620 6 0.8 VDS max 600 4 580 2 0 0 560 1 2 3 4 5 nC 6.5 QG 540 -60 -20 20 60 100 C 180 Tj Page 7 2009-08-18 Rev. 2.1 Page 8 BSP125 2009-08-18