SBX201C
No. A0628-1/3
Features
•Small interterminal capacitance (C=0.25pF typ).
•Less parastic components.
•Small forward voltage.
•Series connection of 2 elements in a small-sized package facilitates high density mounting this goods-applied
equipment to be made smaller.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Reverse Voltage VR2V
Forward Current IF50 mA
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Reverse Voltage VRIR=10μA2V
Forward Voltage VFIF=1mA 320 mV
Series Resistance RSIF=10mA 14 18 Ω
Interterminal Capacitance C VR=0V, f=1MHz 0.25 0.28 pF
Marking : HH
Note 1) The specifications shown above for each individual diode.
Note 2) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0628A
70208 TI IM / 82907SB TI IM TC-00000839
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
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SANYO Semiconductors
DATA SHEET
SBX201C Schottky Barrier Diode
S to X-Band Detector, Mixer Applications
SBX201C
No. A0628-2/3
Package Dimensions Electrical Connection
unit : mm (typ)
7013A-015
1 : Cathode
2 : Anode
3 : Anode/Cathode
SANYO : CP
12
3
1.5
2.5
1.1
0.3
0.05
2.9
0.95 0.4
0.1
0.5
0.5
12
3Reverse series pair
1 : Cathode
2 : Anode
3 : Anode / Cathode
Top view
Forward Voltage, VF -- V
Forward Current, IF -- mA
IF -- VFC -- VR
Reverse Voltage, VR -- V
Interterminal Capacitance, C -- pF
0.2
0.1
2
3
5
7
1.0
0.4 0.60 0.8 1.0 1.2 1.4 1.6 1.8 2.0
IT12707
f=1MHz
IT12705
0 0.1 0.30.2 0.50.4 0.6
2
0.01
7
5
3
2
0.1
7
5
3
2
0.001
--25
°
C
Ta=100
°
C
0
°
C
50°C
25
°
C
1.0
7
5
3
2
10
7
5
3
SBX201C
No. A0628-3/3
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
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PS
This catalog provides information as of July, 2008. Specifications and information herein are subject
to change without notice.
S11 Parameters
V=0V/I=0mA V=0V/I=0.1mA V=0V/I=0.5mA V=0V/I=1.0mA V=0V/I=5mA
Freq(GHz) ⏐S11⏐∠S11 ⏐S11⏐∠S11 ⏐S11⏐∠S11 ⏐S11⏐∠S11 ⏐S11⏐∠S11
1.00 0.996 -8.9 0.844 -8.9 0.381 -2.6 0.092 64.4 0.459 148.1
2.00 0.992 -18.4 0.811 -18.6 0.314 -3.7 0.177 82.0 0.517 122.2
3.00 0.987 -30.0 0.800 -30.6 0.289 -8.8 0.251 76.7 0.582 102.8
4.00 0.975 -44.8 0.766 -46.7 0.208 -12.0 0.326 73.6 0.642 87.7
5.00 0.958 -63.9 0.696 -67.8 0.127 12.0 0.403 68.5 0.691 75.0
6.00 0.944 -89.0 0.634 264.7 0.170 54.5 0.477 62.3 0.730 64.3
7.00 0.928 237.1 0.566 227.1 0.274 62.6 0.537 55.9 0.758 55.3
8.00 0.909 195.8 0.538 180.8 0.372 60.7 0.586 49.5 0.780 47.2
9.00 0.910 153.3 0.570 135.1 0.465 54.2 0.630 42.8 0.798 39.4
10.00 0.927 116.3 0.646 100.6 0.541 47.4 0.666 36.5 0.809 32.3
11.00 0.925 88.9 0.734 75.9 0.608 42.1 0.694 31.7 0.818 26.8
12.00 0.922 70.5 0.771 62.0 0.651 37.3 0.717 27.6 0.828 22.5
13.00 0.929 56.1 0.814 49.6 0.694 31.8 0.735 22.9 0.833 17.3
14.00 0.919 42.7 0.828 38.0 0.717 24.7 0.740 17.0 0.821 11.2
15.00 0.897 30.9 0.831 27.2 0.731 17.8 0.736 11.1 0.800 5.1
16.00 0.879 20.8 0.843 17.8 0.753 11.9 0.739 6.2 0.787 -0.1
17.00 0.872 13.1 0.834 10.7 0.760 5.1 0.750 0.1 0.792 -5.9
18.00 0.855 5.1 0.826 3.1 0.764 -1.2 0.750 -5.4 0.780 -11.5
