EMP112-P1
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised July 2004
ISSUED DATE: 07-01-04 5.0 – 7.2 GHz Power Amplifier MMIC
Optional Packaging solutions are available
contact the Excelics sales team for details.
FEATURES
• 5.0 – 7.2 GHz Operating Frequency Range
• 29.5dBm Output Power at 1dB Compression
• 21.0 dB Typical Small Signal Gain
• -40dBc OIMD3 @Each Tone Pout 19 dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Caution! ESD sensitive dev i ce.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ= 800 mA)
SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS
F Operating Frequency Range 5.0 7.2 GHz
P1dB Output Power at 1dB Gain Compression 28.0 29.5 dBm
Gss Small Signal Gain 18.0 21.0 dB
OIMD3 Output 3rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 19dBm -40 dBc
Input RL Input Return Loss -14 dB
Output RL Output Return Loss -6 dB
Idss Saturate Drain Current VDS =3V, VGS =0V 992 1240 1488 mA
VDD Power Supply Voltage 7 8 V
Rth Thermal Resistance (Au-Sn Eutectic Attach) 7.5 oC/W
Tb Operating Base Plate Temperature - 35 + 85 ºC
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL CHARACTERISTIC VALUE
VDS Drain to Source Voltage 8 V
VGS Gate to Source Voltage - 4 V
IDD Drain Current Idss
IGSF Forward Gate Current 18 mA
PIN Input Power @ 3dB compression
TCH Channel Temperature 150°C
TSTG Storage Temperature -65/150°C
PT Total Power Dissipation 15.2W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature
