GWM 220-004P3 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25C to 150C Maximum Ratings VGS 40 V 20 V ID25 ID90 TC = 25C TC = 90C 180 138 A A IF25 IF90 TC = 25C (diode) TC = 90C (diode) 115 75 A A Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. RDSon on chip level at VGS = 10 V TVJ = 25C TVJ = 125C VGS(th) VDS = 20 V; ID = 1 mA IDSS VDS = VDSS; VGS = 0 V IGSS VGS = 20 V; VDS = 0 V Qg Qgs Qgd VGS = 10 V; VDS = 14 V; ID = 25 A Eon Eoff Erecoff RthJC RthJH Straight leads Applications MOSFETs td(on) tr td(off) tf Surface Mount Device Bent leads max. 2.0 3.2 2.6 2 TVJ = 25C TVJ = 125C VGS = 10 V; VDS = 30 V ID = 25 A; RG = 10 inductive load with heat transfer paste (IXYS test setup) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved typ. mW mW 4 V 1 A mA 0.2 A 0.1 94 18 29 nC nC nC 40 85 140 90 ns ns ns ns tbd tbd tbd mJ mJ mJ 1.3 1.0 1.6 AC drives * in automobiles - electric power steering - starter generator * in industrial vehicles - propulsion drives - fork lift drives * in battery supplied equipment Features * MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer * Space and weight savings Package options * 3 lead forms available - straight leads (SL) - SMD lead version (SMD) - bent leads (BL) K/W K/W 20081126f 1-3 GWM 220-004P3 Source-Drain Diode Symbol Equivalent Circuits for Simulation Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. VSD (diode) IF = 110 A; VGS = 0 V 1.0 trr QRM IRM IF = 20 A; -diF/dt = 100 A/s; VR = 20 V 70 tbd tbd PV max. 1.6 V ns C A Component Symbol Conditions IRMS per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections IISOL < 1 mA, 50/60 Hz, f = 1 minute FC mounting force with clip Symbol Conditions Rth1 Cth1 Rth2 TC Cth2 junction - case (typ.) Cth1 = tbd J/K; Rth1 = tbd K/W Cth2 = tbd J/K; Rth2 = tbd K/W 300 A -55...+175 -55...+125 C C 1000 V~ 50 - 250 N Characteristic Values min. typ. max. Rpin to chip with heatsink compound 0.6 mW CP coupling capacity between shorted pins and mounting tab in the case 160 pF Weight typ. 25 g IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved TJ Maximum Ratings TVJ Tstg VISOL Thermal Response 20081126f 2-3 GWM 220-004P3 Straight Leads Bent Leads GWM 220-003P3-SL G1 GWM 220-003P3-BL L+ S1 G2 L- S2 G1 G3 L+ S1 S3 G2 G4 S4 L- S2 L1 G3 G5 S3 L2 S5 G4 G6 L1 S4 L3 S6 G5 L2 S5 G6 Surface Mount Device G1 L3 S6 GWM 220-003P3-SMD L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 S5 G6 L3 S6 Part Marking Delivering Mode Base Qty. Ordering Code GWM 220-004P3 - SL GWM 220-004P3 Blister 36 503 169 Standard GWM 220-004P3 - SMD GWM 220-004P3 Blister 36 503 176 Standard GWM 220-004P3 - BL GWM 220-004P3 Blister 36 contact factory Leads Ordering Straight Standard SMD Bent Part Name & Packing Unit Marking IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved 20081126f 3-3