© 2008 IXYS All rights reserved 1 - 3
20081126f
GWM 220-004P3
IXYS reserves the right to change limits, test conditions and dimensions.
Preliminary data
VDSS = 40 V
ID25 = 180 A
RDSon typ. = 2.0 mW
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
S2
L-
L1
L2
L3
G2
S1
G1
S3
G3
S4
G4
S5
G5
S6
G6
L+
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon on chip level at TVJ = 25°C
VGS = 10 V TVJ = 125°C
2.0
3.2
2.6 mW
mW
VGS(th) VDS = 20 V; ID = 1 mA 2 4 V
IDSS VDS = VDSS; VGS = 0 V TVJ = 25°C
TVJ = 125°C 0.1
1 µA
mA
IGSS VGS = ± 20 V; VDS = 0 V 0.2 µA
Qg
Qgs
Qgd
VGS = 10 V; VDS = 14 V; ID = 25 A
94
18
29
nC
nC
nC
td(on)
tr
td(off)
tf
VGS = 10 V; VDS = 30 V
ID = 25 A; RG = 10 Ω
inductive load
40
85
140
90
ns
ns
ns
ns
Eon
Eoff
Erecoff
tbd
tbd
tbd
mJ
mJ
mJ
RthJC
RthJH with heat transfer paste (IXYS test setup) 1.3
1.0
1.6
K/W
K/W
MOSFETs
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C to 150°C 40 V
VGS ± 20 V
ID25
ID90
TC = 25°C
TC = 90°C
180
138
A
A
IF25
IF90
TC = 25°C (diode)
TC = 90°C (diode)
115
75
A
A
Surface Mount
Device
Straight leads
Bent leads
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 3 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
- bent leads (BL)
© 2008 IXYS All rights reserved 2 - 3
20081126f
GWM 220-004P3
IXYS reserves the right to change limits, test conditions and dimensions.
Component
Symbol Conditions Maximum Ratings
IRMS per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
300 A
TVJ
Tstg
-55...+175
-55...+125
°C
°C
VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute 1000 V~
FCmounting force with clip 50 - 250 N
Symbol Conditions Characteristic Values
min. typ. max.
Rpin to chip with heatsink compound 0.6 mW
CPcoupling capacity between shorted
pins and mounting tab in the case
160 pF
Weight typ. 25 g
Equivalent Circuits for Simulation
Thermal Response
junction - case (typ.)
Cth1 = tbd J/K; Rth1 = tbd K/W
Cth2 = tbd J/K; Rth2 = tbd K/W
P
V
T
J
R
t h 1
R
t h 2
C
t h 2
C
t h 1
T
C
Source-Drain Diode
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VSD (diode) IF = 110 A; VGS = 0 V 1.0 1.6 V
trr
QRM
IRM
IF = 20 A; -diF/dt = 100 A/µs; VR = 20 V
70
tbd
tbd
ns
µC
A
© 2008 IXYS All rights reserved 3 - 3
20081126f
GWM 220-004P3
IXYS reserves the right to change limits, test conditions and dimensions.
Straight Leads GWM 220-003P3-SL
G1
S1
G2
S2
G3
S3
G4
S4
G5
S5
G6
S6
L+
L-
L1
L2
L3
Bent Leads GWM 220-003P3-BL
G1
S1
G2
S2
G3
S3
G4
S4
G5
S5
G6
S6
L+
L-
L1
L2
L3
Surface Mount Device GWM 220-003P3-SMD
G1
S1
G2
S2
G3
S3
G4
S4
G5
S5
G6
S6
L+
L-
L1
L2
L3
Leads Ordering Part Name &
Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering
Code
Straight Standard GWM 220-004P3 - SL GWM 220-004P3 Blister 36 503 169
SMD Standard GWM 220-004P3 - SMD GWM 220-004P3 Blister 36 503 176
Bent Standard GWM 220-004P3 - BL GWM 220-004P3 Blister 36 contact factory
