Data
sheet
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MMIC Broadband
Amplifier, 6- 18GHz
The P35-4140-000-200 is a high performance monolithic
broadband amplifier designed for use in a wide range of
applications including telecommunications, instrumentation
and electronic warfare. The amplifier gives typically 5.5dB
gain over the frequency range 6GHz to 18GHz. On chip input
and output blocking capacitors simplify assembly and allow
the amplifier to be cascaded easily.
The die is fabricated using Bookham Technology's F20
Gallium Arsenide MESFET MMIC process. It is fully
protected using Silicon Nitride passivation for excellent
performance and reliability.
Features
•Broadband cascadable gain
block
•AGC control with gate bias
•15dBm output power typical
•Noise Figure 5.5dB typical
•On chip DC blocking capacitors
at input and output
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Notes
1. At 50% Idss, which will be in the range 40-80mA.
2. Improved input return loss can be achieved at the bondwire/microstrip interface.
3. Gain control can be achieved with variation of Vg typically 5dB/vo
Parameter Conditions Min Typ Max Units
Small signal gain 16GHz - 18GHz 5.0 5.5 - dB
Gain Flatness 6GHz - 18GHz - ±0.5 ±1.0 dB
Input Return Loss 26GHz - 14GHz 6.5 8 - dB
14GHz - 18GHz 4.5 8 -
Output Return Loss 6GHz - 18GHz 10 15 - dB
Noise figure 6GHz - 18GHz - 5.5 7.0 dB
Output Power at 1dB Compression 6GHz - 18.0 - dBm
18GHz 14.0 15.0 -
Reverse Isolation 6GHz - 25.0 - dB
18GHz - 14.0 - dB
Gate Voltage Vg 3For Id = 60mA 0 -0.6 -5 Volts
Drain Voltage Vd +4.5 +5.0 +6.0 Volts
Electrical Performance
Ambient temperature = 22 ±3 Deg C , Zo = 50 ohms, Vd = 5V, Id = 50% Idss
Typical Performance at 22° C
Absolute Maximum Ratings
Max supply voltage +6.0V
Max Vgs -5.0V
Chip operating temperature -55°C to 125°C
Storage temperature -65°C to +150°
P35-4140-000-200
Gain Noise Figure
Input Return Loss (dB) Output Return Loss (dB)
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P35-4140-000-200
Operation
To operate the P35-4140-0, a drain supply of 5V is connected to pad 3. The amplifier circuit is
controlled by the voltage applied at pad 4 and should be set to give a drain current of 50%
Idss which will be in the range of 40-80mA, typically 60mA. The voltage required for this is
typically -0.6V. Gain control achieved with the variation of Vg is typically 5dB/volt at 50% Idss.
Improved input return loss (approx. 10dB) can be achieved at the bondwire/microstrip
interface once the die is mounted by the addition of an input microstrip transformer (see input
return loss plot). Decoupling capacitors of 470pF are required at the gate and drain bias
inputs. Additional drain decoupling with a 4.7 µF capacitor is recommended. The RF
connections should be made with two wires (25 µm diam), Maximum length 0.3mm at RF in
and a single wire, length 0.4mm at RF out.
See application note P35-41AN2 for more details. It is recommended that the die is mounted
with silver loaded epoxy and bonding to all pads is with 25 µm diameter gold wire using
thermal compression bonding. Gain variation with temperature is typically 0.015dB/°C
Die Outline Pad Details
Pad Function
1 RF IN
2 RF OUT
3 Drain Voltage Vd
4 Gate Voltage Vg
De bias connections
Bond Pad Configuration
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
• Tel: +44 (0) 1327 356 789
• Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
Chip size: 2.69 x 2.06mm
Bond pad size: 120 µm square
Chip thickness: 200 µm
Ordering Information
P35-4140-000-200
462/SM/00580/200 Issue 1/2
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